SML20M21BFN: 产品描述Power Field-Effect Transistor, 120A I(D), 200V, 0.021ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, FP-10; 产品类别分立半导体晶体管; 文件大小324KB，共1页; 制造商TT Electronics plc; 官网地址http://www.ttelectronics.com/

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SML20M21BFN概述

Power Field-Effect Transistor, 120A I(D), 200V, 0.021ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, FP-10

SML20M21BFN规格参数

	SML20M21BFN	SML20M40BFN
描述	Power Field-Effect Transistor, 120A I(D), 200V, 0.021ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, FP-10	Power Field-Effect Transistor, 83A I(D), 200V, 0.04ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, FP-10
厂商名称	TT Electronics plc	TT Electronics plc
包装说明	FLATPACK, R-MDFP-F10	FLATPACK, R-MDFP-F10
Reach Compliance Code	unknown	compliant
ECCN代码	EAR99	EAR99
其他特性	HIGH RELIABILITY	HIGH RELIABILITY
最小漏源击穿电压	200 V	200 V
最大漏极电流 (ID)	120 A	83 A
最大漏源导通电阻	0.021 Ω	0.04 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	R-MDFP-F10	R-MDFP-F10
端子数量	10	10
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE
封装主体材料	METAL	METAL
封装形状	RECTANGULAR	RECTANGULAR
封装形式	FLATPACK	FLATPACK
极性/信道类型	N-CHANNEL	N-CHANNEL
认证状态	Not Qualified	Not Qualified
表面贴装	YES	YES
端子形式	FLAT	FLAT
端子位置	DUAL	DUAL
晶体管元件材料	SILICON	SILICON

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