FDW2509NZ
January 2005
FDW2509NZ
Common Drain N-Channel 2.5V Specified PowerTrench
®
MOSFET
General Description
This N-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild’s Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate drive
voltage (2.5V – 12V).
Features
•
7.1 A, 20 V. R
DS(ON)
= 20 mΩ @ V
GS
= 4.5 V
R
DS(ON)
= 26 mΩ @ V
GS
= 2.5 V
Extended V
GSS
range (±12V) for battery applications
ESD protection diode (note 3)
High performance trench technology for extremely
low R
DS(ON)
Low profile TSSOP-8 package
•
•
Applications
Li-Ion Battery Pack
•
•
G2
S2
S2
D2
G1
S1
S1
D1
Pin 1
TSSOP-8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
20
±12
(Note 1a)
Units
V
A
W
°C
7.1
30
1.6
1.1
–55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
77
114
°C/W
Package Marking and Ordering Information
Device Marking
2509NZ
©2005
Fairchild Semiconductor Corporation
Device
FDW2509NZ
Reel Size
13’’
Tape width
12mm
Quantity
3000 units
FDW2509NZ Rev C(W)
FDW2509NZ
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
(Note 2)
Test Conditions
V
GS
= 0 V,
I
D
= 250
µA
Min
20
Typ
Max Units
V
Off Characteristics
I
D
= 250
µA,
Referenced to 25°C
V
DS
= 16 V,
V
GS
= 0 V
11
1
±
10
mV/°C
µA
µA
V
GS
=
±12
V, V
DS
= 0 V
I
D
= 250
µA
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
V
DS
= V
GS
,
0.6
0.8
–3
15
18
20
1.5
V
mV/°C
I
D
= 250
µA,
Referenced to 25°C
V
GS
= 4.5 V, I
D
= 7.1 A
V
GS
= 2.5 V, I
D
= 6.2 A
V
GS
= 4.5 V, I
D
= 7.1A, T
J
=125°C
V
GS
= 4.5 V, V
DS
= 5 V
V
DS
= 5 V,
I
D
= 7.1 A
20
26
29
mΩ
I
D(on)
g
FS
(Note 4)
30
36
A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
(Note 2)
V
DS
= 10 V,
f = 1.0 MHz
V
GS
= 0 V,
1263
327
179
1.9
pF
pF
pF
Ω
V
GS
= 15 mV, f = 1.0 MHz
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
V
SD
t
rr
Q
rr
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
DD
= 10 V,
V
GS
= 4.5 V,
I
D
= 1 A,
R
GEN
= 6
Ω
11
15
27
12
13
2
4
20
27
43
22
19
ns
ns
ns
ns
nC
nC
nC
V
DS
= 10 V,
V
GS
= 4.5 V
I
D
= 7.1 A,
Drain–Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
V
GS
= 0 V,
I
F
= 7.1 A,
I
S
= 1.3 A
(Note 2)
1.3
1.2
20
14
A
V
nS
nC
d
iF
/d
t
= 100 A/µs
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a) R
θJA
is 77°C/W (steady state) when mounted on a 1 inch² copper pad on FR-4.
b) R
θJA
is 114
°C/W
(steady state) when mounted on a minimum copper pad on FR-4.
2.
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3.
The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
4.
I
D(on)
parameter is guaranteed by design and will not be subjected to 100% production testing. Please refer to Fig 1 (On-Region Characteristics).
FDW2509NZ Rev. C(W)
FDW2509NZ
Typical Characteristics
30
25
I
D
, DRAIN CURRENT (A)
20
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 4.5V
3.5V
1.8
2.5V
2.0V
V
GS
= 2.0V
1.6
1.8V
15
10
5
0
0
1
2
3
4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
1.4
2.5V
1.2
3.0V
3.5V
4.5V
1
0.8
0
5
10
15
20
25
30
I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.05
R
DS(ON)
, ON-RESISTANCE (OHM)
1.6
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 7.1A
V
GS
= 4.5V
1.4
I
D
= 3.6A
0.04
1.2
0.03
T
A
= 125
o
C
T
A
= 25
o
C
1
0.8
0.02
0.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
0.01
1
2
3
4
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
30
V
DS
= 5V
25
I
D
, DRAIN CURRENT (A)
20
15
10
5
0
0.5
1
1.5
2
2.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
T
A
= -55
o
C
25
o
125 C
I
S
, REVERSE DRAIN CURRENT (A)
o
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
V
GS
= 0V
10
T
A
= 125
o
C
1
0.1
0.01
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
25
o
C
-55
o
C
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDW2509NZ Rev. C(W)
FDW2509NZ
Typical Characteristics
5
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 7.1A
4
CAPACITANCE (pF)
15V
3
V
DS
= 5V
10V
2000
f = 1MHz
V
GS
= 0 V
1500
C
ISS
1000
C
OSS
500
C
RSS
2
1
0
0
4
8
Q
g
, GATE CHARGE (nC)
12
16
0
0
4
8
12
16
20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100
P(pk), PEAK TRANSIENT POWER (W)
Figure 8. Capacitance Characteristics.
50
R
DS(ON)
LIMIT
100us
I
D
, DRAIN CURRENT (A)
10
1ms
10ms
100ms
1s
10s
DC
V
GS
= 4.5V
SINGLE PULSE
R
θJA
= 114
o
C/W
T
A
= 25
o
C
0.01
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
40
SINGLE PULSE
R
θJA
= 114°C/W
T
A
= 25°C
30
1
20
0.1
10
0
0.001
0.01
0.1
1
t
1
, TIME (sec)
10
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
R
θJA
(t) = r(t) * R
θJA
R
θJA
=114 °C/W
P(pk)
t
1
t
2
T
J
- T
A
= P * R
θJA
(t)
Duty Cycle, D = t
1
/ t
2
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDW2509NZ Rev. C(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
2. A critical component is any component of a life
1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I15
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