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IR2110STR

产品描述2.5 A HALF BRDG BASED MOSFET DRIVER, PDSO16
产品类别模拟混合信号IC    驱动程序和接口   
文件大小326KB,共18页
制造商International Rectifier ( Infineon )
官网地址http://www.irf.com/
相似器件已查找到14个与IR2110STR功能相似器件
下载文档 详细参数 全文预览

IR2110STR概述

2.5 A HALF BRDG BASED MOSFET DRIVER, PDSO16

2.5 A 半桥 场效应管驱动器, PDSO16

IR2110STR规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
厂商名称International Rectifier ( Infineon )
零件包装代码SOIC
包装说明SOP, SOP16,.4
针数16
Reach Compliance Codecompli
ECCN代码EAR99
高边驱动器YES
接口集成电路类型HALF BRIDGE BASED MOSFET DRIVER
JESD-30 代码R-PDSO-G16
JESD-609代码e0
长度10.3 mm
湿度敏感等级3
功能数量1
端子数量16
最高工作温度125 °C
最低工作温度-40 °C
标称输出峰值电流2.5 A
封装主体材料PLASTIC/EPOXY
封装代码SOP
封装等效代码SOP16,.4
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)245
电源15 V
认证状态Not Qualified
座面最大高度2.65 mm
最大供电电压20 V
最小供电电压3.3 V
标称供电电压15 V
电源电压1-最大520 V
电源电压1-分钟6 V
表面贴装YES
技术CMOS
温度等级AUTOMOTIVE
端子面层Tin/Lead (Sn/Pb)
端子形式GULL WING
端子节距1.27 mm
端子位置DUAL
处于峰值回流温度下的最长时间30
断开时间0.125 µs
接通时间0.15 µs
宽度7.5 mm

文档预览

下载PDF文档
Data Sheet No. PD60147 rev.U
IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF
HIGH AND LOW SIDE DRIVER
Features
Floating channel designed for bootstrap operation
Fully operational to +500V or +600V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout for both channels
3.3V logic compatible
Separate logic supply range from 3.3V to 20V
Logic and power ground ±5V offset
CMOS Schmitt-triggered inputs with pull-down
Cycle by cycle edge-triggered shutdown logic
Matched propagation delay for both channels
Outputs in phase with inputs
Product Summary
V
OFFSET
(IR2110)
(IR2113)
I
O
+/-
V
OUT
t
on/off
(typ.)
500V max.
600V max.
2A / 2A
10 - 20V
120 & 94 ns
Delay Matching (IR2110) 10 ns max.
(IR2113) 20ns max.
Packages
Description
The IR2110/IR2113 are high voltage, high speed power MOSFET and
IGBT drivers with independent high and low side referenced output chan-
16-Lead SOIC
nels. Proprietary HVIC and latch immune CMOS technologies enable
14-Lead PDIP
IR2110S/IR2113S
ruggedized monolithic construction. Logic inputs are compatible with
IR2110/IR2113
standard CMOS or LSTTL output, down to 3.3V logic. The output
drivers feature a high pulse current buffer stage designed for minimum
driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The
floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which
operates up to 500 or 600 volts.
Typical Connection
HO
V
DD
HIN
SD
LIN
V
SS
V
CC
V
DD
HIN
SD
LIN
V
SS
V
CC
COM
LO
V
B
V
S
up to 500V or 600V
TO
LOAD
(Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical
connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout.
www.irf.com
1

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