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IDT70V3589S133DRG: 产品描述Dual-Port SRAM, 64KX36, 15ns, CMOS, PQFP208, 28 X 28 MM, 3.50 MM HEIGHT, GREEN, PLASTIC, QFP-208; 产品类别存储存储; 文件大小239KB，共23页; 制造商IDT (Integrated Device Technology); 标准

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IDT70V3589S133DRG概述

Dual-Port SRAM, 64KX36, 15ns, CMOS, PQFP208, 28 X 28 MM, 3.50 MM HEIGHT, GREEN, PLASTIC, QFP-208

IDT70V3589S133DRG规格参数

参数名称	属性值
是否无铅	不含铅
是否Rohs认证	符合
厂商名称	IDT (Integrated Device Technology)
零件包装代码	QFP
包装说明	FQFP, QFP208,1.2SQ,20
针数	208
Reach Compliance Code	compliant
ECCN代码	3A991.B.2.A
最长访问时间	15 ns
其他特性	PIPELINED OR FLOW-THROUGH ARCHITECTURE
最大时钟频率 (fCLK)	133 MHz
I/O 类型	COMMON
JESD-30 代码	S-PQFP-G208
JESD-609代码	e3
长度	28 mm
内存密度	2359296 bit
内存集成电路类型	DUAL-PORT SRAM
内存宽度	36
湿度敏感等级	3
功能数量	1
端口数量	2
端子数量	208
字数	65536 words
字数代码	64000
工作模式	SYNCHRONOUS
最高工作温度	70 °C
最低工作温度
组织	64KX36
输出特性	3-STATE
封装主体材料	PLASTIC/EPOXY
封装代码	FQFP
封装等效代码	QFP208,1.2SQ,20
封装形状	SQUARE
封装形式	FLATPACK, FINE PITCH
并行/串行	PARALLEL
峰值回流温度（摄氏度）	260
电源	2.5/3.3,3.3 V
认证状态	Not Qualified
座面最大高度	4.1 mm
最大待机电流	0.03 A
最小待机电流	3.15 V
最大压摆率	0.4 mA
最大供电电压 (Vsup)	3.45 V
最小供电电压 (Vsup)	3.15 V
标称供电电压 (Vsup)	3.3 V
表面贴装	YES
技术	CMOS
温度等级	COMMERCIAL
端子面层	Matte Tin (Sn)
端子形式	GULL WING
端子节距	0.5 mm
端子位置	QUAD
处于峰值回流温度下的最长时间	30
宽度	28 mm

IDT70V3589S133DRG相似产品对比

	IDT70V3589S133DRG	IDT70V3589S133DRGI	IDT70V3589S133DRGI8	IDT70V3599S133BFGI	IDT70V3599S133BFGI8	IDT70V3599S133BCGI	IDT70V3599S166DRG	IDT70V3599S166BFG8	IDT70V3589S133DRG8	IDT70V3599S133DRGI
描述	Dual-Port SRAM, 64KX36, 15ns, CMOS, PQFP208, 28 X 28 MM, 3.50 MM HEIGHT, GREEN, PLASTIC, QFP-208	Dual-Port SRAM, 64KX36, 15ns, CMOS, PQFP208, 28 X 28 MM, 3.50 MM HEIGHT, GREEN, PLASTIC, QFP-208	Application Specific SRAM, 64KX36, 4.2ns, CMOS, PQFP208	Dual-Port SRAM, 128KX36, 15ns, CMOS, PBGA208, 15 X 15 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, GREEN, FBGA-208	Dual-Port SRAM, 128KX36, 15ns, CMOS, PBGA208, 15 X 15 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, FBGA-208	Dual-Port SRAM, 128KX36, 15ns, CMOS, PBGA256, 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, GREEN, BGA-256	Dual-Port SRAM, 128KX36, 12ns, CMOS, PQFP208, 28 X 28 MM, 3.50 MM HEIGHT, GREEN, PLASTIC, QFP-208	Dual-Port SRAM, 128KX36, 12ns, CMOS, PBGA208, 15 X 15 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, FBGA-208	Application Specific SRAM, 64KX36, 4.2ns, CMOS, PQFP208	Dual-Port SRAM, 128KX36, 15ns, CMOS, PQFP208, 28 X 28 MM, 3.50 MM HEIGHT, GREEN, PLASTIC, QFP-208
是否无铅	不含铅	不含铅	不含铅	不含铅	不含铅	不含铅	不含铅	不含铅	不含铅	不含铅
是否Rohs认证	符合	符合	符合	符合	符合	符合	符合	符合	符合	符合
厂商名称	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
ECCN代码	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
最长访问时间	15 ns	15 ns	4.2 ns	15 ns	15 ns	15 ns	12 ns	12 ns	4.2 ns	15 ns
最大时钟频率 (fCLK)	133 MHz	133 MHz	133 MHz	133 MHz	133 MHz	133 MHz	166 MHz	166 MHz	133 MHz	133 MHz
I/O 类型	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 代码	S-PQFP-G208	S-PQFP-G208	S-PQFP-G208	S-PBGA-B208	S-PBGA-B208	S-PBGA-B256	S-PQFP-G208	S-PBGA-B208	S-PQFP-G208	S-PQFP-G208
JESD-609代码	e3	e3	e3	e1	e1	e1	e3	e1	e3	e3
内存密度	2359296 bit	2359296 bit	2359296 bit	4718592 bit	4718592 bit	4718592 bit	4718592 bit	4718592 bit	2359296 bit	4718592 bit
内存集成电路类型	DUAL-PORT SRAM	DUAL-PORT SRAM	APPLICATION SPECIFIC SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	APPLICATION SPECIFIC SRAM	DUAL-PORT SRAM
内存宽度	36	36	36	36	36	36	36	36	36	36
湿度敏感等级	3	3	3	3	3	3	3	3	3	3
端口数量	2	2	2	2	2	2	2	2	2	2
端子数量	208	208	208	208	208	256	208	208	208	208
字数	65536 words	65536 words	65536 words	131072 words	131072 words	131072 words	131072 words	131072 words	65536 words	131072 words
字数代码	64000	64000	64000	128000	128000	128000	128000	128000	64000	128000
工作模式	SYNCHRONOUS	SYNCHRONOUS	ASYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	ASYNCHRONOUS	SYNCHRONOUS
最高工作温度	70 °C	85 °C	85 °C	85 °C	85 °C	85 °C	70 °C	70 °C	70 °C	85 °C
最低工作温度	-	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-	-	-	-40 °C
组织	64KX36	64KX36	64KX36	128KX36	128KX36	128KX36	128KX36	128KX36	64KX36	128KX36
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	FQFP	FQFP	QFP	LFBGA	LFBGA	LBGA	FQFP	LFBGA	QFP	FQFP
封装等效代码	QFP208,1.2SQ,20	QFP208,1.2SQ,20	QFP208,1.2SQ,20	BGA208,17X17,32	BGA208,17X17,32	BGA256,16X16,40	QFP208,1.2SQ,20	BGA208,17X17,32	QFP208,1.2SQ,20	QFP208,1.2SQ,20
封装形状	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE
封装形式	FLATPACK, FINE PITCH	FLATPACK, FINE PITCH	FLATPACK	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE	FLATPACK, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	FLATPACK	FLATPACK, FINE PITCH
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	260	260	260	260	260	260	260	260	260	260
电源	2.5/3.3,3.3 V	2.5/3.3,3.3 V	2.5/3.3,3.3 V	2.5/3.3,3.3 V	2.5/3.3,3.3 V	2.5/3.3,3.3 V	2.5/3.3,3.3 V	2.5/3.3,3.3 V	2.5/3.3,3.3 V	2.5/3.3,3.3 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
最大待机电流	0.03 A	0.04 A	0.04 A	0.04 A	0.04 A	0.04 A	0.03 A	0.03 A	0.03 A	0.04 A
最小待机电流	3.15 V	3.15 V	3.15 V	3.15 V	3.15 V	3.15 V	3.15 V	3.15 V	3.15 V	3.15 V
最大压摆率	0.4 mA	0.48 mA	0.48 mA	0.48 mA	0.48 mA	0.48 mA	0.5 mA	0.5 mA	0.4 mA	0.48 mA
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	INDUSTRIAL
端子面层	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Matte Tin (Sn)	Tin/Silver/Copper (Sn/Ag/Cu)	Matte Tin (Sn)	Matte Tin (Sn)
端子形式	GULL WING	GULL WING	GULL WING	BALL	BALL	BALL	GULL WING	BALL	GULL WING	GULL WING
端子节距	0.5 mm	0.5 mm	0.5 mm	0.8 mm	0.8 mm	1 mm	0.5 mm	0.8 mm	0.5 mm	0.5 mm
端子位置	QUAD	QUAD	QUAD	BOTTOM	BOTTOM	BOTTOM	QUAD	BOTTOM	QUAD	QUAD
处于峰值回流温度下的最长时间	30	30	30	30	30	30	30	30	30	30
零件包装代码	QFP	QFP	-	BGA	BGA	BGA	QFP	BGA	-	QFP
包装说明	FQFP, QFP208,1.2SQ,20	FQFP, QFP208,1.2SQ,20	QFP, QFP208,1.2SQ,20	LFBGA, BGA208,17X17,32	LFBGA, BGA208,17X17,32	LBGA, BGA256,16X16,40	FQFP, QFP208,1.2SQ,20	LFBGA, BGA208,17X17,32	-	FQFP, QFP208,1.2SQ,20
针数	208	208	-	208	208	256	208	208	-	208
其他特性	PIPELINED OR FLOW-THROUGH ARCHITECTURE	PIPELINED OR FLOW-THROUGH ARCHITECTURE	-	PIPELINED OR FLOW-THROUGH ARCHITECTURE	FLOW-THROUGH OR PIPELINED ARCHITECTURE	PIPELINED OR FLOW-THROUGH ARCHITECTURE	PIPELINED OR FLOW-THROUGH ARCHITECTURE	FLOW-THROUGH OR PIPELINED ARCHITECTURE	-	PIPELINED OR FLOW-THROUGH ARCHITECTURE
长度	28 mm	28 mm	-	15 mm	15 mm	17 mm	28 mm	15 mm	-	28 mm
功能数量	1	1	-	1	1	1	1	1	-	1
座面最大高度	4.1 mm	4.1 mm	-	1.7 mm	1.7 mm	1.7 mm	4.1 mm	1.7 mm	-	4.1 mm
最大供电电压 (Vsup)	3.45 V	3.45 V	-	3.45 V	3.45 V	3.45 V	3.45 V	3.45 V	-	3.45 V
最小供电电压 (Vsup)	3.15 V	3.15 V	-	3.15 V	3.15 V	3.15 V	3.15 V	3.15 V	-	3.15 V
标称供电电压 (Vsup)	3.3 V	3.3 V	-	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	-	3.3 V
宽度	28 mm	28 mm	-	15 mm	15 mm	17 mm	28 mm	15 mm	-	28 mm

IDT70V3589S133DRG

IDT70V3589S133DRG概述

IDT70V3589S133DRG规格参数

IDT70V3589S133DRG相似产品对比

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