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MBRF10100CTD0G

产品描述Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 100V V(RRM), Silicon, TO-220AB, GREEN, PLASTIC, ITO-220AB, 3 PIN
产品类别分立半导体    二极管   
文件大小249KB,共3页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
下载文档 详细参数 全文预览

MBRF10100CTD0G概述

Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 100V V(RRM), Silicon, TO-220AB, GREEN, PLASTIC, ITO-220AB, 3 PIN

MBRF10100CTD0G规格参数

参数名称属性值
厂商名称Taiwan Semiconductor
包装说明R-PSFM-T3
Reach Compliance Codeunknown
ECCN代码EAR99
其他特性FREE WHEELING DIODE, LOW POWER LOSS, UL RECOGNIZED
应用EFFICIENCY
外壳连接ISOLATED
配置COMMON CATHODE, 2 ELEMENTS
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.95 V
JEDEC-95代码TO-220AB
JESD-30 代码R-PSFM-T3
JESD-609代码e3
最大非重复峰值正向电流120 A
元件数量2
相数1
端子数量3
最高工作温度150 °C
最低工作温度-65 °C
最大输出电流5 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
参考标准AEC-Q101
最大重复峰值反向电压100 V
最大反向电流100 µA
表面贴装NO
技术SCHOTTKY
端子面层PURE TIN
端子形式THROUGH-HOLE
端子位置SINGLE

文档预览

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CREAT BY ART
MBRF1035CT - MBRF10200CT
10.0 AMPS. Isolated Schottky Barrier Rectifiers
ITO-220AB
Features
UL Recognized File # E-326243
Plastic material used carriers Underwriters
Laboratory Classification 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
Guard-ring for overvoltage protection
High temperature soldering guaranteed:
260℃/10 seconds, at terminals
Green compound with suffix "G" on packing
code & prefix "G" on datecode
Mechanical Data
Case:ITO-220AB molded plastic body
Terminals: Pure tin plated, lead free, solderable
per MIL-STD-750, Method 2026
Polarity: As marked
Mounting position:Any
Mounting torque: 5 in. - lbs, max
Weight: 1.74 grams
Ordering Information (example)
Part No.
Package
Packing
Packing
code
D0
Green Compound
Packing code
D0G
MBRF1035CT ITO-220AB 50 / TUBE
Maximum Ratings and Electrical Characteristics
Rating at 25
ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
MBRF MBRF MBRF MBRF MBRF MBRF MBRF MBRF
Symbol 1035 1045 1050 1060 1090 10100 10150 10200
CT
CT
CT
CT
CT
CT
CT
CT
V
RRM
35
45
50
60
90
100
150
200
V
RMS
V
DC
I
F(AV)
I
FRM
I
FSM
I
RRM
0.70
V
F
0.57
0.80
0.67
I
R
dV/dt
R
θjC
T
J
T
STG
15
0.80
0.65
0.90
0.75
0.1
10
10000
3.5
- 65 to + 150
- 65 to + 150
5
24
35
31
45
35
50
42
60
10
10
120
0.5
0.85
0.75
0.95
0.85
0.88
0.78
0.98
0.88
mA
V/us
O
Type Number
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20KHz)
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method)
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage (Note 2)
IF=5A, TA=25℃
IF=5A, TA=125℃
IF=10A, T
A
=25℃
IF=10A, T
A
=125℃
Maximum Reverse Current @ Rated VR
Voltage Rate of Change (Rated V
R
)
Typical Thermal Resistance
Operating Temperature Range
Storage Temperature Range
Note 1: 2.0uS Pulse Width, f=1.0KHz
Note 2: Pulse Test : 300uS Pulse Width, 1% Duty Cycle
T
A
=25
T
A
=125
Unit
V
V
V
A
A
A
A
63
90
70
100
105
150
140
200
V
C/W
O
O
C
C
Version:J12

 
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