Memory Circuit, Flash+PSRAM, 8MX16, CMOS, PBGA77, FBGA-77
参数名称 | 属性值 |
是否Rohs认证 | 不符合 |
厂商名称 | Micron Technology |
零件包装代码 | BGA |
包装说明 | FBGA-77 |
针数 | 77 |
Reach Compliance Code | unknown |
最长访问时间 | 60 ns |
其他特性 | CELLULARRAM ORGANISATION IS 4M X 16 |
JESD-30 代码 | R-PBGA-B77 |
JESD-609代码 | e1 |
长度 | 10 mm |
内存密度 | 134217728 bit |
内存集成电路类型 | MEMORY CIRCUIT |
内存宽度 | 16 |
混合内存类型 | FLASH+PSRAM |
功能数量 | 1 |
端子数量 | 77 |
字数 | 8388608 words |
字数代码 | 8000000 |
工作模式 | ASYNCHRONOUS |
最高工作温度 | 85 °C |
最低工作温度 | -25 °C |
组织 | 8MX16 |
封装主体材料 | PLASTIC/EPOXY |
封装代码 | LFBGA |
封装等效代码 | BGA77,8X10,32 |
封装形状 | RECTANGULAR |
封装形式 | GRID ARRAY, LOW PROFILE, FINE PITCH |
电源 | 1.8 V |
认证状态 | Not Qualified |
座面最大高度 | 1.4 mm |
最大待机电流 | 0.00015 A |
最大供电电压 (Vsup) | 1.95 V |
最小供电电压 (Vsup) | 1.7 V |
标称供电电压 (Vsup) | 1.8 V |
表面贴装 | YES |
技术 | CMOS |
温度等级 | OTHER |
端子面层 | TIN SILVER COPPER |
端子形式 | BALL |
端子节距 | 0.8 mm |
端子位置 | BOTTOM |
宽度 | 8 mm |
MT28C128564W30DFW-606BTWT | MT28C128564W30DFW-705BTWT | MT28C128564W18DFW-606BTWT | MT28C128532W30DFW-606BBWT | MT28C128564W18DFW-705BTWT | MT28C128532W30DFW-705TBWT | |
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描述 | Memory Circuit, Flash+PSRAM, 8MX16, CMOS, PBGA77, FBGA-77 | Memory Circuit, Flash+PSRAM, 8MX16, CMOS, PBGA77, FBGA-77 | Memory Circuit, Flash+PSRAM, 8MX16, CMOS, PBGA77, FBGA-77 | Memory Circuit, Flash+PSRAM, 8MX16, CMOS, PBGA77, FBGA-77 | Memory Circuit, Flash+PSRAM, 8MX16, CMOS, PBGA77, FBGA-77 | Memory Circuit, Flash+PSRAM, 8MX16, CMOS, PBGA77, FBGA-77 |
是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
厂商名称 | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology |
零件包装代码 | BGA | BGA | BGA | BGA | BGA | BGA |
包装说明 | FBGA-77 | FBGA-77 | FBGA-77 | FBGA-77 | FBGA-77 | FBGA-77 |
针数 | 77 | 77 | 77 | 77 | 77 | 77 |
Reach Compliance Code | unknown | not_compliant | unknown | unknown | unknown | unknown |
最长访问时间 | 60 ns | 70 ns | 60 ns | 60 ns | 70 ns | 70 ns |
其他特性 | CELLULARRAM ORGANISATION IS 4M X 16 | CELLULARRAM ORGANISATION IS 4M X 16 | CELLULARRAM ORGANISATION IS 4M X 16 | CELLULARRAM ORGANISATION IS 2M X 16 | CELLULARRAM ORGANISATION IS 4M X 16 | CELLULARRAM ORGANISATION IS 2M X 16 |
JESD-30 代码 | R-PBGA-B77 | R-PBGA-B77 | R-PBGA-B77 | R-PBGA-B77 | R-PBGA-B77 | R-PBGA-B77 |
JESD-609代码 | e1 | e1 | e1 | e1 | e1 | e1 |
长度 | 10 mm | 10 mm | 10 mm | 10 mm | 10 mm | 10 mm |
内存密度 | 134217728 bit | 134217728 bit | 134217728 bit | 134217728 bit | 134217728 bit | 134217728 bit |
内存集成电路类型 | MEMORY CIRCUIT | MEMORY CIRCUIT | MEMORY CIRCUIT | MEMORY CIRCUIT | MEMORY CIRCUIT | MEMORY CIRCUIT |
内存宽度 | 16 | 16 | 16 | 16 | 16 | 16 |
混合内存类型 | FLASH+PSRAM | FLASH+PSRAM | FLASH+PSRAM | FLASH+PSRAM | FLASH+PSRAM | FLASH+PSRAM |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 77 | 77 | 77 | 77 | 77 | 77 |
字数 | 8388608 words | 8388608 words | 8388608 words | 8388608 words | 8388608 words | 8388608 words |
字数代码 | 8000000 | 8000000 | 8000000 | 8000000 | 8000000 | 8000000 |
工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
最高工作温度 | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C |
最低工作温度 | -25 °C | -25 °C | -25 °C | -25 °C | -25 °C | -25 °C |
组织 | 8MX16 | 8MX16 | 8MX16 | 8MX16 | 8MX16 | 8MX16 |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装代码 | LFBGA | LFBGA | LFBGA | LFBGA | LFBGA | LFBGA |
封装等效代码 | BGA77,8X10,32 | BGA77,8X10,32 | BGA77,8X10,32 | BGA77,8X10,32 | BGA77,8X10,32 | BGA77,8X10,32 |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | GRID ARRAY, LOW PROFILE, FINE PITCH | GRID ARRAY, LOW PROFILE, FINE PITCH | GRID ARRAY, LOW PROFILE, FINE PITCH | GRID ARRAY, LOW PROFILE, FINE PITCH | GRID ARRAY, LOW PROFILE, FINE PITCH | GRID ARRAY, LOW PROFILE, FINE PITCH |
电源 | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
座面最大高度 | 1.4 mm | 1.4 mm | 1.4 mm | 1.4 mm | 1.4 mm | 1.4 mm |
最大待机电流 | 0.00015 A | 0.00015 A | 0.00015 A | 0.00014 A | 0.00015 A | 0.00014 A |
最大供电电压 (Vsup) | 1.95 V | 1.95 V | 1.95 V | 1.95 V | 1.95 V | 1.95 V |
最小供电电压 (Vsup) | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V |
标称供电电压 (Vsup) | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V |
表面贴装 | YES | YES | YES | YES | YES | YES |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | OTHER | OTHER | OTHER | OTHER | OTHER | OTHER |
端子面层 | TIN SILVER COPPER | TIN SILVER COPPER | TIN SILVER COPPER | TIN SILVER COPPER | TIN SILVER COPPER | TIN SILVER COPPER |
端子形式 | BALL | BALL | BALL | BALL | BALL | BALL |
端子节距 | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm |
端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
宽度 | 8 mm | 8 mm | 8 mm | 8 mm | 8 mm | 8 mm |
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