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Datasheet> 器件分类 > 存储> 存储> MN18R1628EF0-CM8

MN18R1628EF0-CM8: 产品描述Rambus DRAM Module, 128MX18, CMOS; 产品类别存储存储; 文件大小516KB，共16页; 制造商SAMSUNG(三星); 官网地址http://www.samsung.com/Products/Semiconductor/

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MN18R1628EF0-CM8概述

Rambus DRAM Module, 128MX18, CMOS

MN18R1628EF0-CM8规格参数

参数名称	属性值
厂商名称	SAMSUNG(三星)
包装说明	,
Reach Compliance Code	unknown
ECCN代码	EAR99
访问模式	BLOCK ORIENTED PROTOCOL
其他特性	SELF CONTAINED REFRESH
JESD-30 代码	R-XXMA-X200
内存密度	2415919104 bit
内存集成电路类型	RAMBUS DRAM MODULE
内存宽度	18
功能数量	1
端口数量	1
端子数量	200
字数	134217728 words
字数代码	128000000
工作模式	SYNCHRONOUS
组织	128MX18
封装主体材料	UNSPECIFIED
封装形状	RECTANGULAR
封装形式	MICROELECTRONIC ASSEMBLY
认证状态	Not Qualified
自我刷新	YES
最大供电电压 (Vsup)	2.63 V
最小供电电压 (Vsup)	2.37 V
标称供电电压 (Vsup)	2.5 V
表面贴装	NO
技术	CMOS
端子形式	UNSPECIFIED
端子位置	UNSPECIFIED

MN18R1628EF0-CM8相似产品对比

	MN18R1628EF0-CM8	MP18R1624EF0-CT9	MP18R1628EF0-CM8	MP18R1628EF0-CT9	MN18R1624EF0-CT9	MN18R1624EF0-CM8	MP18R1624EF0-CM8	MN18R1628EF0-CT9
描述	Rambus DRAM Module, 128MX18, CMOS	Rambus DRAM Module, 64MX18, CMOS	Rambus DRAM Module, 128MX18, CMOS	Rambus DRAM Module, 128MX18, CMOS	Rambus DRAM Module, 64MX18, CMOS	Rambus DRAM Module, 64MX18, CMOS	Rambus DRAM Module, 64MX18, CMOS	Rambus DRAM Module, 128MX18, CMOS
厂商名称	SAMSUNG(三星)	SAMSUNG(三星)	SAMSUNG(三星)	SAMSUNG(三星)	SAMSUNG(三星)	SAMSUNG(三星)	SAMSUNG(三星)	SAMSUNG(三星)
Reach Compliance Code	unknown	unknown	compliant	unknown	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
访问模式	BLOCK ORIENTED PROTOCOL	BLOCK ORIENTED PROTOCOL	BLOCK ORIENTED PROTOCOL	BLOCK ORIENTED PROTOCOL	BLOCK ORIENTED PROTOCOL	BLOCK ORIENTED PROTOCOL	BLOCK ORIENTED PROTOCOL	BLOCK ORIENTED PROTOCOL
其他特性	SELF CONTAINED REFRESH	SELF CONTAINED REFRESH	SELF CONTAINED REFRESH	SELF CONTAINED REFRESH	SELF CONTAINED REFRESH	SELF CONTAINED REFRESH	SELF CONTAINED REFRESH	SELF CONTAINED REFRESH
JESD-30 代码	R-XXMA-X200	R-XXMA-X200	R-XXMA-X200	R-XXMA-X200	R-XXMA-X200	R-XXMA-X200	R-XXMA-X200	R-XXMA-X200
内存密度	2415919104 bit	1207959552 bit	2415919104 bit	2415919104 bit	1207959552 bit	1207959552 bit	1207959552 bit	2415919104 bit
内存集成电路类型	RAMBUS DRAM MODULE	RAMBUS DRAM MODULE	RAMBUS DRAM MODULE	RAMBUS DRAM MODULE	RAMBUS DRAM MODULE	RAMBUS DRAM MODULE	RAMBUS DRAM MODULE	RAMBUS DRAM MODULE
内存宽度	18	18	18	18	18	18	18	18
功能数量	1	1	1	1	1	1	1	1
端口数量	1	1	1	1	1	1	1	1
端子数量	200	200	200	200	200	200	200	200
字数	134217728 words	67108864 words	134217728 words	134217728 words	67108864 words	67108864 words	67108864 words	134217728 words
字数代码	128000000	64000000	128000000	128000000	64000000	64000000	64000000	128000000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
组织	128MX18	64MX18	128MX18	128MX18	64MX18	64MX18	64MX18	128MX18
封装主体材料	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
自我刷新	YES	YES	YES	YES	YES	YES	YES	YES
最大供电电压 (Vsup)	2.63 V	2.63 V	2.63 V	2.63 V	2.63 V	2.63 V	2.63 V	2.63 V
最小供电电压 (Vsup)	2.37 V	2.37 V	2.37 V	2.37 V	2.37 V	2.37 V	2.37 V	2.37 V
标称供电电压 (Vsup)	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
表面贴装	NO	NO	NO	NO	NO	NO	NO	NO
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
端子形式	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
端子位置	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED

MN18R1628EF0-CM8

MN18R1628EF0-CM8概述

MN18R1628EF0-CM8规格参数

MN18R1628EF0-CM8相似产品对比

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