SRAM Module, 1MX32, 12ns, CMOS
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | IDT (Integrated Device Technology) |
| 包装说明 | , |
| Reach Compliance Code | compliant |
| ECCN代码 | 3A991.B.2.A |
| 最长访问时间 | 12 ns |
| JESD-30 代码 | R-XSMA-N72 |
| JESD-609代码 | e0 |
| 内存密度 | 33554432 bit |
| 内存集成电路类型 | SRAM MODULE |
| 内存宽度 | 32 |
| 功能数量 | 1 |
| 端子数量 | 72 |
| 字数 | 1048576 words |
| 字数代码 | 1000000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 70 °C |
| 最低工作温度 | |
| 组织 | 1MX32 |
| 封装主体材料 | UNSPECIFIED |
| 封装形状 | RECTANGULAR |
| 封装形式 | MICROELECTRONIC ASSEMBLY |
| 并行/串行 | PARALLEL |
| 峰值回流温度（摄氏度） | 225 |
| 认证状态 | Not Qualified |
| 最大供电电压 (Vsup) | 3.6 V |
| 最小供电电压 (Vsup) | 3 V |
| 标称供电电压 (Vsup) | 3.3 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | COMMERCIAL |
| 端子面层 | TIN LEAD |
| 端子形式 | NO LEAD |
| 端子位置 | SINGLE |
| 处于峰值回流温度下的最长时间 | 30 |
| IDT7MPV4120S12M | IDT7MPV4120S20M | IDT7MPV4120S15M | IDT7MPV4135S20M | IDT7MPV4135S15M | IDT7MPV4135S12M | |
|---|---|---|---|---|---|---|
| 描述 | SRAM Module, 1MX32, 12ns, CMOS | SRAM Module, 1MX32, 20ns, CMOS | SRAM Module, 1MX32, 15ns, CMOS | SRAM Module, 512KX32, 20ns, CMOS | SRAM Module, 512KX32, 15ns, CMOS | SRAM Module, 512KX32, 12ns, CMOS |
| 厂商名称 | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) |
| Reach Compliance Code | compliant | unknown | unknown | unknown | unknown | compliant |
| ECCN代码 | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A |
| 最长访问时间 | 12 ns | 20 ns | 15 ns | 20 ns | - | 12 ns |
| JESD-30 代码 | R-XSMA-N72 | R-XSMA-N72 | R-XSMA-N72 | R-XSMA-N72 | - | R-XSMA-N72 |
| JESD-609代码 | e0 | e0 | e0 | e0 | - | e0 |
| 内存密度 | 33554432 bit | 33554432 bit | 33554432 bit | 16777216 bit | - | 16777216 bit |
| 内存集成电路类型 | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | - | SRAM MODULE |
| 内存宽度 | 32 | 32 | 32 | 32 | - | 32 |
| 功能数量 | 1 | 1 | 1 | 1 | - | 1 |
| 端子数量 | 72 | 72 | 72 | 72 | - | 72 |
| 字数 | 1048576 words | 1048576 words | 1048576 words | 524288 words | - | 524288 words |
| 字数代码 | 1000000 | 1000000 | 1000000 | 512000 | - | 512000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | - | ASYNCHRONOUS |
| 最高工作温度 | 70 °C | 70 °C | 70 °C | 70 °C | - | 70 °C |
| 组织 | 1MX32 | 1MX32 | 1MX32 | 512KX32 | - | 512KX32 |
| 封装主体材料 | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | - | UNSPECIFIED |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | - | RECTANGULAR |
| 封装形式 | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | - | MICROELECTRONIC ASSEMBLY |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | - | PARALLEL |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | - | Not Qualified |
| 最大供电电压 (Vsup) | 3.6 V | 3.6 V | 3.6 V | 3.6 V | - | 3.6 V |
| 最小供电电压 (Vsup) | 3 V | 3 V | 3 V | 3 V | - | 3 V |
| 标称供电电压 (Vsup) | 3.3 V | 3.3 V | 3.3 V | 3.3 V | - | 3.3 V |
| 表面贴装 | NO | NO | NO | NO | - | NO |
| 技术 | CMOS | CMOS | CMOS | CMOS | - | CMOS |
| 温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | - | COMMERCIAL |
| 端子面层 | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | - | TIN LEAD |
| 端子形式 | NO LEAD | NO LEAD | NO LEAD | NO LEAD | - | NO LEAD |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | - | SINGLE |
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