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MBRB2045CTHE3_A/P

产品描述Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 45V V(RRM), Silicon, TO-263AB,
产品类别分立半导体    二极管   
文件大小105KB,共5页
制造商Vishay(威世)
官网地址http://www.vishay.com
标准
下载文档 详细参数 选型对比 全文预览

MBRB2045CTHE3_A/P概述

Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 45V V(RRM), Silicon, TO-263AB,

MBRB2045CTHE3_A/P规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Vishay(威世)
包装说明R-PSSO-G2
Reach Compliance Codeunknown
ECCN代码EAR99
其他特性FREE WHEELING DIODE, LOW POWER LOSS
应用EFFICIENCY
外壳连接CATHODE
配置COMMON CATHODE, 2 ELEMENTS
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.84 V
JEDEC-95代码TO-263AB
JESD-30 代码R-PSSO-G2
JESD-609代码e3
湿度敏感等级1
最大非重复峰值正向电流150 A
元件数量2
相数1
端子数量2
最高工作温度150 °C
最低工作温度-65 °C
最大输出电流10 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)245
参考标准AEC-Q101
最大重复峰值反向电压45 V
最大反向电流100 µA
表面贴装YES
技术SCHOTTKY
端子面层Matte Tin (Sn)
端子形式GULL WING
端子位置SINGLE
处于峰值回流温度下的最长时间30

MBRB2045CTHE3_A/P文档预览

MBRF20xxCT, MBRB20xxCT
www.vishay.com
Vishay General Semiconductor
Dual Common Cathode Schottky Rectifier
ITO-220AB
D
2
PAK (TO-263AB)
FEATURES
Power pack
Guardring for overvoltage protection
Low power loss, high efficiency
Low forward voltage drop
High forward surge capability
High frequency operation
Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C (for D
2
PAK (TO-263AB) package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for ITO-220AB package)
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
K
2
2
3
1
MBRB20xxCT
PIN 1
PIN 2
K
HEATSINK
1
MBRF20xxCT
PIN 1
PIN 3
PIN 2
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
max.
Package
Diode variations
2 x 10 A
35 V, 45 V, 60 V
150 A
0.57 V, 0.70 V
150 °C
ITO-220AB, D
2
PAK (TO-263AB)
Common cathode
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, and polarity protection application.
MECHANICAL DATA
Case:
ITO-220AB, D
2
PAK (TO-263AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified
(“_X” denotes revision code, e.g. A, B, ...)
Terminals:
matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity:
as marked
Mounting Torque:
10 in-lbs maximum
MAXIMUM RATINGS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
C
= 135 °C
total device
per diode
SYMBOL
V
RRM
V
RWM
V
DC
I
F(AV)
I
FSM
I
RRM
dV/dt
T
J
T
STG
V
AC
1.0
10 000
-65 to +150
-65 to +175
1500
MBRB2035CT
35
35
35
MBRB2045CT
45
45
45
20
10
150
0.5
V/μs
°C
V
A
MBRB2060CT
60
60
60
V
UNIT
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Peak repetitive reverse surge current per diode at t
p
= 2.0 μs,
1 kHz
Voltage rate of change (rated V
R
)
Operating junction temperature range
Storage temperature range
Isolation voltage (ITO-220AB only) from terminal to heatsink
t = 1 min
Revision: 28-Nov-17
Document Number: 88674
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
MBRF20xxCT, MBRB20xxCT
www.vishay.com
Vishay General Semiconductor
MBRB2035CT,
MBRB2045CT
0.65
0.57
0.84
0.72
0.1
15
ELECTRICAL CHARACTERISTICS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 10 A
Maximum instantaneous
forward voltage per diode
V
F (1)
I
F
= 10 A
I
F
= 20 A
I
F
= 20 A
Maximum reverse current at
DC blocking voltage per diode
I
R (2)
Rated V
R
T
C
= 25 °C
T
C
= 125 °C
T
C
= 25 °C
T
C
= 125 °C
T
C
= 25 °C
T
C
= 125 °C
MBRB2060CT
0.80
0.70
0.95
0.85
0.15
150
mA
V
UNIT
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: pulse width
40 ms
THERMAL CHARACTERISTICS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Typical resistance from junction to case per diode
SYMBOL
R
JC
MBRF
5.0
MBRB
2.0
UNIT
°C/W
ORDERING INFORMATION
(Example)
PACKAGE
ITO-220AB
TO-263AB
TO-263AB
ITO-220AB
TO-263AB
TO-263AB
PREFERRED P/N
MBRF2045CT-E3/45
MBRB2045CT-E3/45
MBRB2045CT-E3/81
MBRF2045CTHE3/45
1)
MBRB2045CTHE3_A/P
(1)(2)
MBRB2045CTHE3_A/I
(1)(2)
UNIT WEIGHT (g)
1.99
1.35
1.35
1.99
1.35
1.35
PACKAGE CODE
45
45
81
45
P
I
BASE QUANTITY
50/tube
50/tube
800/reel
50/tube
50/tube
800/reel
DELIVERY MODE
Tube
Tube
Tape and reel
Tube
Tube
Tape and reel
Notes
(1)
AEC-Q101 qualified
(2)
35 V device available in AEC-Q101 qualified
D
2
PAK (TO-263AB)
only
Revision: 28-Nov-17
Document Number: 88674
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
MBRF20xxCT, MBRB20xxCT
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
C
= 25 °C unless otherwise noted)
20
100
Instantaneous Reverse Current (mA)
Resistive or Inductive Load
MBRB2035CT, MBRB2045CT
MBRB2060CT
10
T
J
= 125 °C
Average Forward Current (A)
16
12
1
8
0.1
T
J
= 75 °C
4
0.01
T
J
= 25 °C
0
0
50
100
150
0.001
0
20
40
60
80
100
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Forward Derating Curve (Total)
Fig. 4 - Typical Reverse Characteristics Per Diode
160
10 000
T
J
= T
J
Max.
8.3 ms Single Half Sine-Wave
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
Peak Forward Surge Current (A)
120
100
Junction Capacitance (pF)
140
1000
80
60
MBRB2035CT, MBRB2045CT
MBRB2060CT
100
1
10
100
0.1
1
10
100
40
Number
of Cycles at 60 Hz
Reverse Voltage (V)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
100
T
J
= 150 °C
10
Pulse Width = 300 µs
1 % Duty Cycle
100
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
10
1.0
T
J
= 25 °C
1
0.1
MBRB2035CT, MBRB2045CT
MBRB2060CT
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
0.1
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics
Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Revision: 28-Nov-17
Document Number: 88674
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
MBRF20xxCT, MBRB20xxCT
www.vishay.com
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
0.404 (10.26)
0.384 (9.75)
Vishay General Semiconductor
ITO-220AB
0.076 (1.93) REF.
45° REF.
0.600 (15.24)
0.580 (14.73)
1
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.076 (1.93) REF.
7° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.135 (3.43) DIA.
0.122 (3.08) DIA.
PIN
2
3
0.671 (17.04)
0.651 (16.54)
7° REF.
0.350 (8.89)
0.330 (8.38)
7° REF.
0.110 (2.79)
0.100 (2.54)
0.191 (4.85)
0.171 (4.35)
0.057 (1.45)
0.045 (1.14)
0.035 (0.89)
0.025 (0.64)
0.028 (0.71)
0.020 (0.51)
0.205 (5.21)
0.195 (4.95)
D
2
PAK (TO-263AB)
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
K
0.360 (9.14)
0.320 (8.13)
1
K
2
0.055 (1.40)
0.047 (1.19)
0.190 (4.83)
0.160 (4.06)
0.055 (1.40)
0.045 (1.14)
Mounting Pad Layout
0.42 (10.66) min.
0.33 (8.38) min.
0.624 (15.85)
0.591 (15.00)
0.670 (17.02)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.15 (3.81) min.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
Revision: 28-Nov-17
Document Number: 88674
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
1
Document Number: 91000

MBRB2045CTHE3_A/P相似产品对比

MBRB2045CTHE3_A/P MBRB2060CTHE3_A/I MBRB2035CTHE3_A/I
描述 Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 45V V(RRM), Silicon, TO-263AB, Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 60V V(RRM), Silicon, TO-263AB, Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 35V V(RRM), Silicon, TO-263AB,
是否Rohs认证 符合 符合 符合
厂商名称 Vishay(威世) Vishay(威世) Vishay(威世)
包装说明 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
Reach Compliance Code unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99
其他特性 FREE WHEELING DIODE, LOW POWER LOSS FREE WHEELING DIODE, LOW POWER LOSS FREE WHEELING DIODE, LOW POWER LOSS
应用 EFFICIENCY EFFICIENCY EFFICIENCY
外壳连接 CATHODE CATHODE CATHODE
配置 COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
二极管元件材料 SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) 0.84 V 0.95 V 0.84 V
JEDEC-95代码 TO-263AB TO-263AB TO-263AB
JESD-30 代码 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
JESD-609代码 e3 e3 e3
湿度敏感等级 1 1 1
最大非重复峰值正向电流 150 A 150 A 150 A
元件数量 2 2 2
相数 1 1 1
端子数量 2 2 2
最高工作温度 150 °C 150 °C 150 °C
最低工作温度 -65 °C -65 °C -65 °C
最大输出电流 10 A 10 A 10 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) 245 245 245
参考标准 AEC-Q101 AEC-Q101 AEC-Q101
最大重复峰值反向电压 45 V 60 V 35 V
最大反向电流 100 µA 150 µA 100 µA
表面贴装 YES YES YES
技术 SCHOTTKY SCHOTTKY SCHOTTKY
端子面层 Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
端子形式 GULL WING GULL WING GULL WING
端子位置 SINGLE SINGLE SINGLE
处于峰值回流温度下的最长时间 30 30 30

 
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