Standard SRAM, 256KX1, 10ns, CMOS, PDSO24
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Micron Technology |
| Reach Compliance Code | not_compliant |
| 最长访问时间 | 10 ns |
| I/O 类型 | SEPARATE |
| JESD-30 代码 | R-PDSO-J24 |
| JESD-609代码 | e0 |
| 内存密度 | 262144 bit |
| 内存集成电路类型 | STANDARD SRAM |
| 内存宽度 | 1 |
| 端子数量 | 24 |
| 字数 | 262144 words |
| 字数代码 | 256000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 85 °C |
| 最低工作温度 | -40 °C |
| 组织 | 256KX1 |
| 输出特性 | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | SOJ |
| 封装等效代码 | SOJ24,.34 |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 并行/串行 | PARALLEL |
| 电源 | 5 V |
| 认证状态 | Not Qualified |
| 最大待机电流 | 0.006 A |
| 最小待机电流 | 4.5 V |
| 最大压摆率 | 0.2 mA |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | INDUSTRIAL |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | J BEND |
| 端子节距 | 1.27 mm |
| 端子位置 | DUAL |
| MT5C2561DJ-10IT | MT5C2561-35IT | MT5C2561-35 | MT5C2561-35AT | MT5C2561-35XT | MT5C2561DJ-35 | MT5C2561DJ-35AT | MT5C2561-10IT | MT5C2561DJ-35IT | MT5C2561DJ-35XT | |
|---|---|---|---|---|---|---|---|---|---|---|
| 描述 | Standard SRAM, 256KX1, 10ns, CMOS, PDSO24 | Standard SRAM, 256KX1, 35ns, CMOS, PDIP24 | Standard SRAM, 256KX1, 35ns, CMOS, PDIP24 | Standard SRAM, 256KX1, 35ns, CMOS, PDIP24 | Standard SRAM, 256KX1, 35ns, CMOS, PDIP24 | Standard SRAM, 256KX1, 35ns, CMOS, PDSO24 | Standard SRAM, 256KX1, 35ns, CMOS, PDSO24 | Standard SRAM, 256KX1, 10ns, CMOS, PDIP24 | Standard SRAM, 256KX1, 35ns, CMOS, PDSO24 | Standard SRAM, 256KX1, 35ns, CMOS, PDSO24 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 厂商名称 | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology |
| Reach Compliance Code | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | unknown |
| 最长访问时间 | 10 ns | 35 ns | 35 ns | 35 ns | 35 ns | 35 ns | 35 ns | 10 ns | 35 ns | 35 ns |
| I/O 类型 | SEPARATE | SEPARATE | SEPARATE | SEPARATE | SEPARATE | SEPARATE | SEPARATE | SEPARATE | SEPARATE | SEPARATE |
| JESD-30 代码 | R-PDSO-J24 | R-PDIP-T24 | R-PDIP-T24 | R-PDIP-T24 | R-PDIP-T24 | R-PDSO-J24 | R-PDSO-J24 | R-PDIP-T24 | R-PDSO-J24 | R-PDSO-J24 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| 内存密度 | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit |
| 内存集成电路类型 | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
| 内存宽度 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 24 | 24 | 24 | 24 | 24 | 24 | 24 | 24 | 24 | 24 |
| 字数 | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words |
| 字数代码 | 256000 | 256000 | 256000 | 256000 | 256000 | 256000 | 256000 | 256000 | 256000 | 256000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 85 °C | 85 °C | 70 °C | 125 °C | 125 °C | 70 °C | 125 °C | 85 °C | 85 °C | 125 °C |
| 最低工作温度 | -40 °C | -40 °C | - | -40 °C | -55 °C | - | -40 °C | -40 °C | -40 °C | -55 °C |
| 组织 | 256KX1 | 256KX1 | 256KX1 | 256KX1 | 256KX1 | 256KX1 | 256KX1 | 256KX1 | 256KX1 | 256KX1 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | SOJ | DIP | DIP | DIP | DIP | SOJ | SOJ | DIP | SOJ | SOJ |
| 封装等效代码 | SOJ24,.34 | DIP24,.3 | DIP24,.3 | DIP24,.3 | DIP24,.3 | SOJ24,.34 | SOJ24,.34 | DIP24,.3 | SOJ24,.34 | SOJ24,.34 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | SMALL OUTLINE | SMALL OUTLINE | IN-LINE | SMALL OUTLINE | SMALL OUTLINE |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 电源 | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 最大待机电流 | 0.006 A | 0.007 A | 0.007 A | 0.007 A | 0.007 A | 0.007 A | 0.007 A | 0.006 A | 0.007 A | 0.007 A |
| 最小待机电流 | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 最大压摆率 | 0.2 mA | 0.135 mA | 0.12 mA | 0.135 mA | 0.135 mA | 0.12 mA | 0.135 mA | 0.2 mA | 0.135 mA | 0.135 mA |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | YES | NO | NO | NO | NO | YES | YES | NO | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | INDUSTRIAL | INDUSTRIAL | COMMERCIAL | AUTOMOTIVE | MILITARY | COMMERCIAL | AUTOMOTIVE | INDUSTRIAL | INDUSTRIAL | MILITARY |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | J BEND | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | J BEND | J BEND | THROUGH-HOLE | J BEND | J BEND |
| 端子节距 | 1.27 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 1.27 mm | 1.27 mm | 2.54 mm | 1.27 mm | 1.27 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
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