MDA95-22N1B
High Voltage Standard Rectifier Module
V
RRM
I
FAV
V
F
=
=
2200 V
1.13 V
=
2x 120 A
Common Anode
Part number
MDA95-22N1B
Backside: isolated
3
1
2
Features / Advantages:
●
Package with DCB ceramic
●
Improved temperature and power cycling
●
Planar passivated chips
●
Very low forward voltage drop
●
Very low leakage current
Applications:
●
Diode for main rectification
●
For single and three phase
bridge configurations
●
Supplies for DC power equipment
●
Input rectifiers for PWM inverter
●
Battery DC power supplies
●
Field supply for DC motors
Package:
TO-240AA
●
Isolation Voltage: 3600 V~
●
Industry standard outline
●
RoHS compliant
●
Height: 30 mm
●
Base plate: DCB ceramic
●
Reduced weight
●
Advanced power cycling
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at
www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191202c
© 2019 IXYS all rights reserved
MDA95-22N1B
Rectifier
Symbol
V
RSM
V
RRM
I
R
V
F
Definition
max. repetitive reverse blocking voltage
reverse current
Ratings
Conditions
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 150°C
T
VJ
= 25°C
T
VJ
= 125 °C
T
VJ
= 150 °C
T
VJ
= 150 °C
min.
typ.
max. non-repetitive reverse blocking voltage
max. Unit
2300
V
2200
200
15
1.20
1.43
1.13
1.46
120
180
0.75
1.95
V
µA
mA
V
V
V
V
A
A
V
mΩ
K/W
481
2.80
3.03
2.38
2.57
W
kA
kA
kA
kA
V
R
= 2200 V
V
R
= 2200 V
I
F
= 150 A
I
F
= 300 A
I
F
= 150 A
I
F
= 300 A
forward voltage drop
I
FAV
I
F(RMS)
V
F0
r
F
R
thJC
R
thCH
P
tot
I
FSM
average forward current
RMS forward current
threshold voltage
slope resistance
T
C
= 100 °C
180° sine
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
0.26 K/W
0.2
T
C
= 25°C
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 150 °C
V
R
= 0 V
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 150 °C
V
R
= 0 V
T
VJ
= 25°C
116
I²t
value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
39.2 kA²s
38.1 kA²s
28.3 kA²s
27.5 kA²s
pF
C
J
junction capacitance
V
R
= 400 V; f = 1 MHz
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191202c
© 2019 IXYS all rights reserved
MDA95-22N1B
Package
Symbol
I
RMS
T
VJ
T
op
T
stg
Weight
M
D
M
T
d
Spp/App
d
Spb/Apb
V
ISOL
isolation voltage
t = 1 second
t = 1 minute
50/60 Hz, RMS; I
ISOL
≤
1 mA
mounting torque
terminal torque
creepage distance on surface | striking distance through air
terminal to terminal
terminal to backside
TO-240AA
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
Ratings
Conditions
per terminal
min.
-40
-40
-40
typ.
max.
200
150
125
125
Unit
A
°C
°C
°C
g
Nm
Nm
mm
mm
V
V
76
2.5
2.5
13.0
16.0
9.7
16.0
3600
3000
4
4
UL
Logo
Date Code +
Location
yywwZ
Circuit
XXXXXXXX
123456
2D Barcode
Part Number
Lot#
Ordering
Standard
Ordering Number
MDA95-22N1B
Marking on Product
MDA95-22N1B
Delivery Mode
Box
Quantity
36
Code No.
510571
Equivalent Circuits for Simulation
I
V
0
R
0
threshold voltage
slope resistance *
Rectifier
* on die level
T
VJ
= 150°C
V
0 max
R
0 max
0.75
0.76
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191202c
© 2019 IXYS all rights reserved
MDA95-22N1B
Outlines TO-240AA
3
1
2
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191202c
© 2019 IXYS all rights reserved
MDA95-22N1B
Rectifier
3000
50 Hz, 80% V
RRM
2500
10
5
V
R
= 0 V
250
200
DC
180° sin
120°
60°
30°
2000
I
FSM
[A]
T
VJ
= 45°C
1500
I
2
t
T
VJ
= 45°C
150
I
FAVM
100
[A
2
s]
1000
T
VJ
= 150°C
500
T
VJ
= 150°C
[A]
50
0
10
-3
10
4
10
-2
10
-1
10
0
10
1
1
2
3
6
8
10
0
0
50
100
150
200
t [s]
Fig. 1 Surge overload current
I
TSM
, I
FSM
: Crest value, t: duration
200
t [ms]
Fig. 2 I
2
t versus time (1-10 ms)
T
C
[°C]
Fig. 3 Maximum forward current
at case temperature
R
thJA
[K/W]
0.4
0.6
150
0.8
1
P
T
100
1.2
1.5
2
DC
180° sin
120°
60°
30°
3
[W]
50
0
0
50
100
150
0
50
100
150
200
I
TAVM
, I
FAVM
[A]
T
A
[°C]
Fig. 4 Power dissipation vs. onstate current and ambient temperature (per diode)
800
R
thKA
[K/W]
0.1
0.15
600
R
L
0.2
0.3
0.4
P
tot
400
[W]
0.5
0.6
200
Circuit
B2
2x MDD95
0.7
0
0
50
100
150
200
250
0
50
100
150
200
I
dAVM
[A]
T
A
[°C]
Fig. 6 Single phase rectifier bridge: Power dissipation versus direct output current
and ambient temperature; R = resistive load,L = inductive load
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191202c
© 2019 IXYS all rights reserved
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