RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN,
| 参数名称 | 属性值 |
| 厂商名称 | Infineon(英飞凌) |
| Reach Compliance Code | compliant |
| ECCN代码 | EAR99 |
| 最大集电极电流 (IC) | 0.03 A |
| 集电极-发射极最大电压 | 15 V |
| 配置 | SINGLE |
| 最高频带 | ULTRA HIGH FREQUENCY BAND |
| JESD-30 代码 | O-PRDB-F3 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 最高工作温度 | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | ROUND |
| 封装形式 | DISK BUTTON |
| 极性/信道类型 | NPN |
| 最大功率耗散 (Abs) | 0.2 W |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子形式 | FLAT |
| 端子位置 | RADIAL |
| 晶体管元件材料 | SILICON |
| 标称过渡频率 (fT) | 5800 MHz |
| BFQ69 | QFN3090ABKAGKWS | BFT98B | BFT99 | BFS55A | BF763 | BFX59 | BFX59F | |
|---|---|---|---|---|---|---|---|---|
| 描述 | RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, | Fixed Resistor, Thin Film, 0.025W, 309ohm, 100V, 0.1% +/-Tol, -100,100ppm/Cel, 0202, | RF Power Bipolar Transistor, 1-Element, Silicon, NPN, | RF Power Bipolar Transistor, 1-Element, Silicon, NPN, | RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-72, | RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-92B, 3 PIN | RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-72, | RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-72, |
| Reach Compliance Code | compliant | unknown | compliant | compliant | compliant | compliant | compli | compli |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 端子数量 | 3 | 2 | 4 | 4 | 4 | 3 | 4 | 4 |
| 最高工作温度 | 150 °C | 125 °C | 150 °C | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C |
| 封装形式 | DISK BUTTON | SMT | DISK BUTTON | POST/STUD MOUNT | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
| 厂商名称 | Infineon(英飞凌) | - | Infineon(英飞凌) | Infineon(英飞凌) | Infineon(英飞凌) | Infineon(英飞凌) | Infineon(英飞凌) | Infineon(英飞凌) |
| 最大集电极电流 (IC) | 0.03 A | - | 0.2 A | 0.35 A | 0.05 A | 0.025 A | 0.1 A | 0.1 A |
| 集电极-发射极最大电压 | 15 V | - | 20 V | 20 V | 15 V | 15 V | 20 V | 20 V |
| 配置 | SINGLE | - | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 最高频带 | ULTRA HIGH FREQUENCY BAND | - | - | - | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND | VERY HIGH FREQUENCY BAND | VERY HIGH FREQUENCY BAND |
| JESD-30 代码 | O-PRDB-F3 | - | O-CRDB-F4 | O-CRPM-F4 | O-MBCY-W4 | O-PBCY-T3 | O-MBCY-W4 | O-MBCY-W4 |
| 元件数量 | 1 | - | 1 | 1 | 1 | 1 | 1 | 1 |
| 封装主体材料 | PLASTIC/EPOXY | - | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | METAL | PLASTIC/EPOXY | METAL | METAL |
| 封装形状 | ROUND | - | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
| 极性/信道类型 | NPN | - | NPN | NPN | NPN | NPN | NPN | NPN |
| 最大功率耗散 (Abs) | 0.2 W | - | 2.3 W | 4 W | 0.25 W | 0.5 W | 0.37 W | 0.37 W |
| 认证状态 | Not Qualified | - | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | - | YES | NO | NO | NO | NO | NO |
| 端子形式 | FLAT | - | FLAT | FLAT | WIRE | THROUGH-HOLE | WIRE | WIRE |
| 端子位置 | RADIAL | - | RADIAL | RADIAL | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| 晶体管元件材料 | SILICON | - | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| 标称过渡频率 (fT) | 5800 MHz | - | 3300 MHz | 3300 MHz | 4500 MHz | 2000 MHz | 900 MHz | 1100 MHz |
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