CYStech Electronics Corp.
3.0Amp. Surface Mount Schottky Barrier Diodes
Spec. No. : C330SA
Issued Date : 2006.06.08
Revised Date :2013.05.22
Page No. : 1/6
SK34SA
Features
•
For surface mounted applications.
•
For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications
•
Plastic material used carries Underwriters Laboratory Flammability Classification 94V-0
•
Low leakage current
•
High surge capability
•
High temperature soldering: 250°C/10 seconds at terminals
•
Exceeds environmental standards of MIL-S-19500/228
Mechanical Data
•
Case: SMA/DO-214AC molded plastic.
•
Terminals: Solder plated, solderable per MIL-STD-750 method 2026
•
Polarity: Indicated by cathode band.
•
Packaging: 12mm tape per EIA STD RS-481.
•
Weight: 0.064 gram, 0.002 ounce
Maximum Ratings and Electrical Characteristics
(
Rating at 25°C ambient temperature unless otherwise specified. )
Parameter
Conditions
Repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum instantaneous
I
F
=3A
(Note 1)
forward voltage
Maximum average forward rectified
current
8.3ms single half sine wave superimposed
Peak forward surge current
on rated load(JEDEC method)
V
R
=V
RRM
,T
A
=25
℃
(Note 1)
Maximum DC reverse current
V
R
=V
RRM
,T
A
=125
℃
(Note 1)
Junction to ambient
(Note 2)
Thermal resistance
Junction to case
Power Dissipation
Diode junction capacitance
Storage temperature
Operating temperature
Notes : 1.Pulse test, pulse width=300μsec, 2% duty cycle
2.Mounted on PCB with 14mm² (0.013mm thickness) copper pad area.
SK34SA
CYStek Product Specification
Symbol
V
RRM
V
RMS
V
R
V
F
I
O
I
FSM
I
R
R
θJA
R
θJC
P
D
C
J
Tstg
T
J
Limit
40
28
40
0.5
3
80
0.5
20
80
30
1.3
3.3
140 (typ)
-65~+150
-65~+125
Units
V
V
V
V
A
A
mA
mA
℃
/W
W
pF
℃
℃
T
A
=25
°
C
T
C
=25
°
C
f=1MHz and applied 4V reverse voltage
CYStech Electronics Corp.
Characteristic Curves
Forward Current Derating Curve
3.5
Peak Forward Surge Current---I
FSM
(A)
Spec. No. : C330SA
Issued Date : 2006.06.08
Revised Date :2013.05.22
Page No. : 2/6
Maximum Non-Repetitive Forward Surge Current
90
80
70
60
50
40
30
20
10
0
1
10
Number of Cycles at 60Hz
100
Tj=25℃, 8.3ms Single
Half Sine Wave
JEDEC method
Average Forward Current---Io(A)
3
2.5
2
1.5
1
0.5
0
0
50
100
Ambient Temperature---TA(℃)
150
Forward Current vs Forward Voltage
100
Junction Capacitance vs Reverse Voltage
700
600
10
Junction Capacitance---C
J
(pF)
Forward Current---I
F
(A)
500
400
300
200
100
0
1
0.1
Tj=25℃, Pulse width=300μs,
1% Duty cycle
0.01
0.1
0.3
0.5
0.7
0.9
1.1
1.3
0.1
Forward Voltage---V
F
(V)
1
10
Reverse Voltage---V
R
(V)
100
Reverse Leakage Current vs Reverse Voltage
10
Reverse Leakage Current---I
R
(mA)
1
Tj=75℃
0.1
0.01
Tj=25℃
0.001
0
10
20
30
40
Reverse Voltage---V
R
(V)
50
SK34SA
CYStek Product Specification
CYStech Electronics Corp.
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5
°C
Spec. No. : C330SA
Issued Date : 2006.06.08
Revised Date :2013.05.22
Page No. : 5/6
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Note : All temperatures refer to topside of the package, measured on the package body surface.
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature
Min(T
S
min)
−Temperature
Max(T
S
max)
−Time(ts
min
to ts
max
)
Time maintained above:
−Temperature
(T
L
)
−
Time (t
L
)
Peak Temperature(T
P
)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25
°C
to peak temperature
Sn-Pb eutectic Assembly
3°C/second max.
100°C
150°C
60-120 seconds
183°C
60-150 seconds
240 +0/-5
°C
10-30 seconds
6°C/second max.
6 minutes max.
Pb-free Assembly
3°C/second max.
150°C
200°C
60-180 seconds
217°C
60-150 seconds
260 +0/-5
°C
20-40 seconds
6°C/second max.
8 minutes max.
SK34SA
CYStek Product Specification
嵌入式系统
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