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KSR1108L99Z

产品描述Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
产品类别分立半导体    晶体管   
文件大小54KB,共4页
制造商Fairchild
官网地址http://www.fairchildsemi.com/
下载文档 详细参数 选型对比 全文预览

KSR1108L99Z概述

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

KSR1108L99Z规格参数

参数名称属性值
厂商名称Fairchild
包装说明SMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
ECCN代码EAR99
其他特性BUILT-IN BIAS RESISTOR RATIO IS 0.48
最大集电极电流 (IC)0.1 A
集电极-发射极最大电压50 V
配置SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)56
JESD-30 代码R-PDSO-G3
元件数量1
端子数量3
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
极性/信道类型NPN
认证状态Not Qualified
表面贴装YES
端子形式GULL WING
端子位置DUAL
晶体管应用SWITCHING
晶体管元件材料SILICON
标称过渡频率 (fT)250 MHz

KSR1108L99Z文档预览

KSR1108
KSR1108
Switching Application
(Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R
1
=47KΩ, R
2
=22KΩ)
• Complement to KSR2108
3
2
1
SOT-23
1. Base 2. Emitter 3. Collector
Marking
Equivalent Circuit
C
R0 8
R1
B
R2
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Value
50
50
10
100
200
150
-55 ~ 150
E
Units
V
V
V
mA
mW
°C
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
I
CBO
h
FE
V
CE
(sat)
f
T
C
ob
V
I
(off)
V
I
(on)
R
1
R
1
/R
2
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio
Test Condition
I
C
=10µA, I
E
=0
I
C
=100µA, I
B
=0
V
CB
=40V, I
E
=0
V
CE
=5V, I
C
=5mA
I
C
=10mA, I
B
=0.5mA
V
CE
=10V, I
C
=5mA
V
CB
=10V, I
E
=0
f=1.0MHz
V
CE
=5V, I
C
=100µA
V
CE
=0.3V, I
C
=2mA
32
1.9
47
2.1
0.8
4
62
2.4
250
3.7
56
0.3
V
MHz
pF
V
V
KΩ
Min.
50
50
0.1
Typ.
Max.
Units
V
V
µA
©2001 Fairchild Semiconductor Corporation
Rev. A1, July 2001
KSR1108
Typical Characteristics
1000
100
V
CE
= 5V
R
1
= 47K
R
2
= 22K
V
CE
= 0.3V
R
1
= 47K
R
2
= 22K
V
I
(on)[V], INPUT VOLTAGE
h
FE
, DC CURRENT GAIN
10
100
1
10
1
10
100
1000
0.1
0.1
1
10
100
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Input On Voltage
280
I
C
[
µ
A], COLLECTOR CURRENT
1000
P
C
[mW], POWER DISSIPATION
V
CE
= 5V
R
1
= 47K
R
2
= 22K
240
200
160
100
120
80
40
10
0.6
0
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
0
25
50
o
75
100
125
150
175
V
I
(OFF)[V], INPUT OFF VOLTAGE
T
a
[ C], AMBIENT TEMPERATURE
Figure 3. Input Off Voltage
Figure 4. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A1, July 2001
KSR1108
Package Demensions
SOT-23
0.20 MIN
2.40
±0.10
0.40
±0.03
1.30
±0.10
0.45~0.60
0.03~0.10
0.38 REF
0.40
±0.03
0.96~1.14
2.90
±0.10
0.12
–0.023
+0.05
0.95
±0.03
0.95
±0.03
1.90
±0.03
0.508REF
0.97REF
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
Rev. A1, July 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
STAR*POWER™
FAST
®
OPTOPLANAR™
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E
2
CMOS™
EnSigna™
FACT™
FACT Quiet Series™
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
PACMAN™
POP™
Power247™
PowerTrench
®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER
®
SMART START™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
UHC™
UltraFET
®
VCX™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
2. A critical component is any component of a life support
1. Life support devices or systems are devices or systems
device or system whose failure to perform can be
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2001 Fairchild Semiconductor Corporation
Rev. H3

KSR1108L99Z相似产品对比

KSR1108L99Z KSR1108S62Z KSR1108D87Z
描述 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
厂商名称 Fairchild Fairchild Fairchild
包装说明 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99
其他特性 BUILT-IN BIAS RESISTOR RATIO IS 0.48 BUILT-IN BIAS RESISTOR RATIO IS 0.48 BUILT-IN BIAS RESISTOR RATIO IS 0.48
最大集电极电流 (IC) 0.1 A 0.1 A 0.1 A
集电极-发射极最大电压 50 V 50 V 50 V
配置 SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE) 56 56 56
JESD-30 代码 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
元件数量 1 1 1
端子数量 3 3 3
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
极性/信道类型 NPN NPN NPN
认证状态 Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES
端子形式 GULL WING GULL WING GULL WING
端子位置 DUAL DUAL DUAL
晶体管应用 SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON
标称过渡频率 (fT) 250 MHz 250 MHz 250 MHz
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