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MMBZ15VAL-7

产品描述Trans Voltage Suppressor Diode, 40W, 12V V(RWM), Unidirectional, 2 Element, Silicon, PLASTIC PACKAGE-3
产品类别分立半导体    二极管   
文件大小387KB,共6页
制造商Diodes Incorporated
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MMBZ15VAL-7概述

Trans Voltage Suppressor Diode, 40W, 12V V(RWM), Unidirectional, 2 Element, Silicon, PLASTIC PACKAGE-3

MMBZ15VAL-7规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称Diodes Incorporated
包装说明R-PDSO-G3
针数3
Reach Compliance Codenot_compliant
ECCN代码EAR99
最大击穿电压15 V
最小击穿电压14.25 V
击穿电压标称值15 V
外壳连接ISOLATED
最大钳位电压21 V
配置COMMON ANODE, 2 ELEMENTS
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码R-PDSO-G3
JESD-609代码e0
湿度敏感等级1
最大非重复峰值反向功率耗散40 W
元件数量2
端子数量3
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)235
极性UNIDIRECTIONAL
最大功率耗散0.225 W
认证状态Not Qualified
最大重复峰值反向电压12 V
表面贴装YES
技术AVALANCHE
端子面层Tin/Lead (Sn85Pb15)
端子形式GULL WING
端子位置DUAL
处于峰值回流温度下的最长时间10

MMBZ15VAL-7文档预览

MMBZ5V6AL - MMBZ33VAL
24W AND 40W PEAK POWER DUAL SURFACE MOUNT TVS
Features
Dual TVS in Common Anode Configuration
24W/40W Peak Power Dissipation Rating @ 1.0ms
(Unidirectional)
225mW Power Dissipation
Ideally Suited for Automated Insertion
Low Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT23
Case Material: Molded Plastic “Green” Molding Compound.
UL Flammability Classification 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Solderable per MIL-STD-202, Method 208
Polarity: See Diagram
Lead Free Plating (Matte Tin Finish Annealed over Alloy 42
Leadframe).
ESD Rating Exceeding 16kV per the Human Body Model (Note 9)
Marking Information: See Below
Ordering Information: See Below
Weight: 0.008 grams (Approximate)
e3
Top View
Device Schematic
Ordering Information
(Note 5)
Part Number
(Type Number)-7*-F
(Type Number)Q-7*-F (Note 4)
MMBZ27VALQ-13-F (Note 4)
* Example: 5.6V type = MMBZ5V6AL-7-F.
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to https://www.diodes.com/quality/product-compliance-definitions/.
5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Qualification
Commercial
Automotive
Automotive
Case
SOT23
SOT23
SOT23
Packaging
3,000/Tape & Reel
3,000/Tape & Reel
10,000/Tape & Reel
Marking Information
xxx = Product type marking code,
See Electrical Characteristics Table, Pages 2
YM = Date Code Marking
Y = Year (ex: F = 2018)
M = Month (ex: 9 = September)
xxx
Date Code Key
Year
Code
Month
Code
2006
T
Jan
1
2007
U
Feb
2
2008
V
Mar
3
2009
W
Apr
4
YM
…..
…..
May
5
2018
F
Jun
6
2019
G
Jul
7
2020
H
2021
I
Aug
8
2022
J
Sep
9
2023
K
Oct
O
2024
L
Nov
N
2025
M
Dec
D
MMBZ5V6AL - MMBZ33VAL
Document number: DS30306 Rev. 15 - 2
1 of 6
www.diodes.com
January 2018
© Diodes Incorporated
MMBZ5V6AL - MMBZ33VAL
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Peak Power Dissipation: MMBZ5V6AL - MMBZ10VAL (Note 7)
Peak Power Dissipation: MMBZ15VAL - MMBZ33VAL (Note 7)
Symbol
P
PK
P
PK
Value
24
40
Unit
W
W
Thermal Characteristics
Characteristic
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient Air (Note 6)
Operating and Storage Temperature Range
Symbol
P
D
R
θJA
T
J
, T
STG
Value
225
556
-65 to +150
Unit
mW
°C/W
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
24 Watt (V
F
= 0.9V max @ I
F
= 10mA)
Max
Reverse
Current, I
R
@ V
RWM
(Note 8)
µA
5.0
Breakdown Voltage
V
BR
(Note 8) (V)
Min
5.32
Nom
5.6
Max
5.88
@ I
T
mA
20
Max. Clamping Voltage,
Typical
V
C
@ I
PP
(Note 7)
Temperature
Coefficient
of Reverse
V
C
I
PP
Voltage
V
A
T
C
(mV/°C)
8.0
3.0
1.8
Type
Number
Marking
Code
V
RWM
MMBZ5V6AL
K9A
Volts
3
24 Watt (V
F
= 0.9V max @ I
F
= 10mA)
Max
Reverse
Current, I
R
@ V
RWM
(Note 8)
µA
0.5
0.5
0.3
0.3
Breakdown Voltage
V
BR
(Note 8) (V)
Min
5.89
6.46
8.65
9.50
Nom
6.2
6.8
9.1
10
Max
6.51
7.14
9.56
10.5
@ I
T
mA
1.0
1.0
1.0
1.0
Max. Clamping Voltage,
Typical
V
C
@ I
PP
(Note 7)
Temperature
Coefficient
of Reverse
V
C
I
PP
Voltage
V
A
T
C
(%/°C)
8.7
2.76
+0.04
9.6
2.5
+0.045
14
1.7
+0.065
14.2
1.7
+0.065
Type
Number
Marking
Code
V
RWM
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
K9B
K9C
K9D
K9E
Volts
3.0
4.5
6.0
6.5
40 Watt (V
F
= 0.9V max @ I
F
= 10mA)
Max.
Reverse
Current, I
R
@ V
RWM
(Note 8)
nA
50
50
50
50
50
Breakdown Voltage
V
BR
(Note 8) (V)
Min
14.25
17.10
19.00
25.65
31.35
Nom
15
18
20
27
33
Max
15.75
18.90
21.00
28.35
34.65
@ I
T
mA
1.0
1.0
1.0
1.0
1.0
Max. Clamping Voltage,
Typical
V
C
@ I
PP
(Note 7)
Temperature
Coefficient
of Reverse
V
C
I
PP
Voltage
V
A
T
C
(%/°C)
21
1.9
+0.080
25
1.6
+0.090
28
1.4
+0.090
40
1.0
+0.090
46
0.87
+0.090
Type
Number
Marking
Code
V
RWM
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
Notes:
K9K
K9L
K9N
K9Q
K9T
Volts
12
14.5
17
22
26
6. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes website at http://www.diodes.com/package-outlines.html.
7. Non-repetitive current pulse per Figure 2 and derate above T
A
= +25°C per Figure 2.
8. Short duration pulse test used to minimize self-heating effect.
9. MMBZ5V6AL and MMBZ15VAL exceed 16kV ESD rating, all other voltages exceed 8kV ESD rating.
MMBZ5V6AL - MMBZ33VAL
Document number: DS30306 Rev. 15 - 2
2 of 6
www.diodes.com
January 2018
© Diodes Incorporated
MMBZ5V6AL - MMBZ33VAL
100
PEAK PULSE DERATING IN % OF
PEAK POWER OR CURRENT
75
50
25
10 X 1000 Waveform
as defined by R.E.A.
0
0
25
50
75 100 125 150 175 200
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 1 Pulse Derating Curve
I
PP
, PEAK PULSE CURRENT (%I
pp
)
t, TIME (ms)
Fig. 2 Pulse Waveform
f = 1MHz
f = 1MHz
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
MMBZ5V6AL
MMBZ15VAL
MMBZ27VAL
BIAS (V)
Fig. 3 Typical Capacitance vs. Bias Voltage
(Lower curve is Bidirectional mode,
Upper curve is Unidirectional mode)
BIAS (V)
Fig. 4 Typical Capacitance vs. Bias Voltage
(Lower curve is Bidirectional mode,
Upper curve is Unidirectional mode)
MMBZ5V6AL - MMBZ33VAL
Document number: DS30306 Rev. 15 - 2
3 of 6
www.diodes.com
January 2018
© Diodes Incorporated
MMBZ5V6AL - MMBZ33VAL
300
100
T
J
= 25°C
P
D
, POWER DISSIPATION (mW)
250
P
pk
, PEAK PULSE POWER (W)
Bidirectional
Non repetitive
pulse waveform
(Rectangular)
200
10
Unidirectional
150
FR-5 Board
100
1.0
50
0
0
25
50
75
100
125
150
175
T
A
, AMBIENT TEMPERATURE
Fig. 5 Steady State Power Derating Curve
0.1
0.1
1.0
10
100
1,000
PULSE WIDTH (ms)
Fig. 6 Pulse Rating Curve,
P
pk
(W) vs. Pulse Width (ms)
10,000
Power is defined as P
pk
= V
C
x I
pp
100
T
J
= 25°C
P
pk (NOM)
, PEAK PULSE POWER (W)
Bidirectional
Non repetitive
pulse waveform
(Rectangular)
10
Unidirectional
1.0
0.1
0.1
1.0
10
100
1,000
PULSE WIDTH (ms)
Fig. 7 Pulse Rating Curve,
P
pk (NOM)
(W) vs. Pulse Width (ms)
10,000
Power is defined as P
pk(NOM)
= V
BR(NOM)
x I
pp
where V
BR(NOM)
is the nominal reverse breakdown voltage
measured at the low test current used
for voltage classification
MMBZ5V6AL - MMBZ33VAL
Document number: DS30306 Rev. 15 - 2
4 of 6
www.diodes.com
January 2018
© Diodes Incorporated
MMBZ5V6AL - MMBZ33VAL
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23
All 7°
GAUGE PLANE
0.25
H
J
K1
K
a
A
M
L
L1
C
B
D
F
G
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.890 1.00 0.975
K1
0.903 1.10 1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085 0.150 0.110
a
--
All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23
Y
Y1
C
Dimensions
C
X
X1
Y
Y1
Value (in mm)
2.0
0.8
1.35
0.9
2.9
X
X1
MMBZ5V6AL - MMBZ33VAL
Document number: DS30306 Rev. 15 - 2
5 of 6
www.diodes.com
January 2018
© Diodes Incorporated

MMBZ15VAL-7相似产品对比

MMBZ15VAL-7 MMBZ5V6AL-7
描述 Trans Voltage Suppressor Diode, 40W, 12V V(RWM), Unidirectional, 2 Element, Silicon, PLASTIC PACKAGE-3 Trans Voltage Suppressor Diode, 24W, 3V V(RWM), Unidirectional, 2 Element, Silicon, PLASTIC PACKAGE-3
是否Rohs认证 不符合 不符合
厂商名称 Diodes Incorporated Diodes Incorporated
包装说明 R-PDSO-G3 R-PDSO-G3
针数 3 3
Reach Compliance Code not_compliant not_compliant
ECCN代码 EAR99 EAR99
最大击穿电压 15 V 5.88 V
最小击穿电压 14.25 V 5.32 V
击穿电压标称值 15 V 5.6 V
最大钳位电压 21 V 8 V
配置 COMMON ANODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS
二极管元件材料 SILICON SILICON
二极管类型 TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码 R-PDSO-G3 R-PDSO-G3
JESD-609代码 e0 e0
最大非重复峰值反向功率耗散 40 W 24 W
元件数量 2 2
端子数量 3 3
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) 235 235
极性 UNIDIRECTIONAL UNIDIRECTIONAL
最大功率耗散 0.225 W 0.225 W
认证状态 Not Qualified Not Qualified
最大重复峰值反向电压 12 V 3 V
表面贴装 YES YES
技术 AVALANCHE AVALANCHE
端子面层 Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15)
端子形式 GULL WING GULL WING
端子位置 DUAL DUAL
处于峰值回流温度下的最长时间 10 10
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