MOC8021M, MOC8050M — Photodarlington Optocoupler (No Base Connection)
September 2009
MOC8021M, MOC8050M
Photodarlington Optocoupler (No Base Connection)
Features
■
High BV
CEO
Description
The MOC8021M and MOC8050M are photodarlington-
type optically coupled optocouplers. The devices have a
gallium arsenide infrared emitting diode coupled with a
silicon darlington phototransistor.
■
■
■
■
■
– Minimum 50V (MOC8021M)
– Minimum 80V (MOC8050M)
High current transfer ratio:
– Minimum 1,000% (MOC8021M)
– Minimum 500% (MOC8050M)
500%
No base connection for improved noise immunity
Underwriters Laboratory (UL) recognized
File #E90700, Volume 2
IEC 60747-5-2 approved (ordering option V)
Applications
■
Appliances, measuring instruments
■
I/O interface for computers
■
Programmable controllers
■
Portable electronics
■
Interfacing and coupling systems of different
potentials and impedance
■
Solid state relays
Schematic
Package Outlines
ANODE 1
6 N/C
CATHODE 2
5 COLLECTOR
N/C 3
4 EMITTER
©2000 Fairchild Semiconductor Corporation
MOC8021M, MOC8050M Rev. 1.0.6
www.fairchildsemi.com
MOC8021M, MOC8050M — Photodarlington Optocoupler (No Base Connection)
Absolute Maximum Ratings
(T
A
= 25°C Unless otherwise specified.)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
TOTAL DEVICE
T
STG
T
OPR
T
SOL
P
D
EMITTER
I
F
V
R
P
D
DETECTOR
V
CEO
Collector-Emitter Voltage
MOC8021M
MOC8050M
Storage Temperature
Operating Temperature
Parameter
Value
-40 to +150
-40 to +100
260 for 10 sec
250
2.94
60
3
120
1.41
Units
°C
°C
°C
mW
mW/°C
mA
V
mW
mW/°C
Lead Solder Temperature (Wave solder)
Total Device Power Dissipation @ T
A
= 25°C
Derate above 25°C
DC/Average Forward Input Current
Reverse Input Voltage
LED Power Dissipation @ T
A
= 25°C
Derate above 25°C
50
80
150
1.76
150
V
mW
mW/°C
mA
P
D
I
C
Detector Power Dissipation @ T
A
= 25°C
Derate above 25°C
Continuous Collector Current
©2000 Fairchild Semiconductor Corporation
MOC8021M, MOC8050M Rev. 1.0.6
www.fairchildsemi.com
2
MOC8021M, MOC8050M — Photodarlington Optocoupler (No Base Connection)
Electrical Characteristics
(T
A
= 25°C Unless otherwise specified.)
Individual Component Characteristics
Symbol
Parameter
EMITTER
V
F
I
R
BV
CEO
Input Forward Voltage
Reverse Leakage Current
Collector-Emitter Breakdown Voltage
MOC8021M
MOC8050M
Emitter-Collector Breakdown Voltage
Collector-Emitter Dark Current
Capacitance
I
F
= 10mA
V
R
= 3.0V
I
C
= 1.0mA, I
F
= 0
50
80
I
E
= 100µA, I
F
= 0
V
CE
= 60V, I
F
= 0
V
CE
= 0V, f = 1MHz
8
5
100
100
10
1
V
V
µA
pF
1.18
0.001
2.00
10
V
µA
Test Conditions
Min.
Typ.*
Max.
Unit
DETECTOR
BV
ECO
I
CEO
C
CE
Transfer Characteristics
Symbol
Parameter
DC CHARACTERISTICS
CTR
Test Conditions
Min.
Typ.*
Max.
Unit
Current Transfer Ratio,
Collector to Emitter
MOC8021M
MOC8050M
I
F
= 10mA, V
CE
= 5V
I
F
= 10mA, V
CE
= 1.5V
I
F
= 5mA, V
CC
= 10V,
R
L
= 100
Ω
I
F
= 5mA, V
CC
= 10V,
R
L
= 100
Ω
1,000
500
%
AC CHARACTERISTICS
t
on
t
off
Non-Saturated Turn-on Time
Turn-off Time
8.5
95
µs
µs
Isolation Characteristics
Symbol
V
ISO
R
ISO
C
ISO
Characteristic
Input-Output Isolation Voltage
Isolation Resistance
Isolation Capacitance
Test Conditions
f = 60Hz, t = 1 sec.
V
I-O
= 500VDC
V
I-O
= Ø, f = 1MHz
Min.
7500
10
11
Typ.
Max.
Units
Vac(pk)
Ω
0.2
2
pF
Note:
*Typical values at T
A
= 25°C
©2000 Fairchild Semiconductor Corporation
MOC8021M, MOC8050M Rev. 1.0.6
www.fairchildsemi.com
3
MOC8021M, MOC8050M — Photodarlington Optocoupler (No Base Connection)
Safety and Insulation Ratings
As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.
Compliance with the safety ratings shall be ensured by means of protective circuits.
Symbol
Parameter
Installation Classifications per DIN VDE 0110/1.89
Table 1
For Rated Main Voltage < 150Vrms
For Rated Main voltage < 300Vrms
Climatic Classification
Pollution Degree (DIN VDE 0110/1.89)
Min.
Typ.
Max.
Unit
I-IV
I-IV
55/100/21
2
175
1594
V
peak
CTI
V
PR
Comparative Tracking Index
Input to Output Test Voltage, Method b,
V
IORM
x 1.875 = V
PR
, 100% Production Test
with tm = 1 sec, Partial Discharge < 5pC
Input to Output Test Voltage, Method a,
V
IORM
x 1.5 = V
PR
, Type and Sample Test
with tm = 60 sec, Partial Discharge < 5pC
1275
V
peak
V
IORM
V
IOTM
Max. Working Insulation Voltage
Highest Allowable Over Voltage
External Creepage
External Clearance
Insulation Thickness
850
6000
7
7
0.5
10
9
V
peak
V
peak
mm
mm
mm
Ω
RIO
Insulation Resistance at Ts, V
IO
= 500V
©2000 Fairchild Semiconductor Corporation
MOC8021M, MOC8050M Rev. 1.0.6
www.fairchildsemi.com
4
MOC8021M, MOC8050M — Photodarlington Optocoupler (No Base Connection)
Typical Performance Curves
Fig. 1 LED Forward Voltage vs. Forward Current
NORMALIZED CTR – CURRENT TRANSFER RATIO
1.8
Fig. 2 Normalized CTR vs. Forward Current
V
CE
= 10V
T
A
= 25 C
o
Normalized to I
F
= 10 mA
1.6
V
F
- FORWARD VOLTAGE (V)
1.4
T
A
= -40
o
C
T
A
= 0 C, 25 C
o
o
T
A
= -40 C
o
1
T
A
= 7 0 C
T
A
= 110
o
C
o
1.2
1.0
T
A
= 25
o
C
T
A
= 110
o
C
0.8
0.6
0.1
1
10
100
0.1
0.1
1
10
100
I
F
- LED FORWARD CURRENT (mA)
I
F
- FORWARD CURRENT (mA)
Fig. 4 Turn-on Time vs. Forward Current
1000
Fig. 3 Normalized CTR vs. Ambient Temperature
NORMALIZED CTR – CURRENT TRANSFER RATIO
1.6
I
F
= 10mA
V
= 10V
Normalized to T
A
= 25 C
o
R
L
= 1k
Ω
V
CC
= 10V
T
A
= 25
o
C
1.4
CE
100
T
ON
- TURN-ON TIME (µs)
R
L
= 100Ω
R
L
= 10Ω
1.2
10
1.0
0.8
1
0.6
0.4
-40
-20
0
20
40
60
80
100
120
0.1
0.1
1
10
100
T
A
- AMBIENT TEMPERATURE (°C)
I
F
- FORWARD CURRENT (mA)
Fig. 5 Turn-off Time vs. Forward Current
V
CC
= 10V
T
A
= 25 C
1000
o
Fig. 6 Normalized Collector-Emitter Current
vs. Collector-Emitter Voltage
NORMALIZED I
CE
- COLLECOTR-EMITTER CURRENT
16
T
A
= 25 C
14
I
F
= 10 mA
12
10
I
F
= 5 mA
8
6
4
2
0
0
1
2
3
4
5
6
7
8
9
10
o
Normalized to:
I
F
= 1 mA, V
CE
= 5V
T
OFF
- TURN-ON TIME (µs)
R
L
= 1KΩ
100
R
L
= 100Ω
R
L
= 10Ω
10
I
F
= 2 mA
I
F
= 1 mA
1
0
1
10
100
I
F
- FORWARD CURRENT (mA)
V
CE
- COLLECTOR-EMITTER VOLTAGE (V)
©2000 Fairchild Semiconductor Corporation
MOC8021M, MOC8050M Rev. 1.0.6
www.fairchildsemi.com
5
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