Datasheet> 器件分类 > 分立半导体> 二极管> 1N6660E3

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1N6660E3: 产品描述Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 45V V(RRM), Silicon, TO-254AA, TO-254, 3 PIN; 产品类别分立半导体二极管; 文件大小170KB，共2页; 制造商Microsemi; 官网地址https://www.microsemi.com

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1N6660E3概述

Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 45V V(RRM), Silicon, TO-254AA, TO-254, 3 PIN

1N6660E3规格参数

参数名称	属性值
厂商名称	Microsemi
包装说明	TO-254, 3 PIN
Reach Compliance Code	compliant
ECCN代码	EAR99
应用	POWER
外壳连接	ISOLATED
配置	COMMON CATHODE, 2 ELEMENTS
二极管元件材料	SILICON
二极管类型	RECTIFIER DIODE
JEDEC-95代码	TO-254AA
JESD-30 代码	S-XSFM-P3
最大非重复峰值正向电流	300 A
元件数量	2
相数	1
端子数量	3
最高工作温度	150 °C
最低工作温度	-65 °C
最大输出电流	15 A
封装主体材料	UNSPECIFIED
封装形状	SQUARE
封装形式	FLANGE MOUNT
参考标准	MIL-19500/608
最大重复峰值反向电压	45 V
表面贴装	NO
技术	SCHOTTKY
端子形式	PIN/PEG
端子位置	SINGLE

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TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http://www.microsemi.com

Gort Road Business Park, Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

DUAL SCHOTTKY POWER RECTIFIER

Qualified per MIL-PRF-19500/608

DEVICES

LEVELS

1N6660

1N6660CCT1

1N6660R

1N6660CAT1

1N6660DT1

JAN

JANTX

JANTXV

30 Amp / 45 Volts

COMMON CATHODE

COMMON ANODE

SCHOTTKY RECTIFIER

ABSOLUTE MAXIMUM RATINGS

= +25°C unless otherwise noted)(Per Diode)

Parameters / Test Conditions

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Average Forward Current, 25°C

Peak Surge Forward Current @ t

= 8.3ms, half

sinewave, I

= 0; V

= 0

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Operating Junction Temperature

Storage Temperature

Symbol

RWM

RRM

FSM

θjc

θja

stg

Value

Note 1

300

1.65

-65°C to 150

Unit

Apk

°C/W

°C

TO-254

Note:

1. Derate linearly @ 300mA/°C from T

= T

= +100°C to 150°C

ELECTRICAL CHARACTERISTICS

= +25°C, unless otherwise noted)

Parameters / Test Conditions

OFF CHARACTERTICS

Forward Voltage

= 5A, T

= 25°C*

= 15A, T

= 25°C*

= 30A, T

= 25°C*

= 15A, T

= -55°C*

Reverse Current

= 45V, T

= 25°C

= 45V, T

= 125°C

Junction Capacitance

= 5V

f = 1MHz

* Pulse test: Pulse width 300 µsec, Duty cycle 2%

0.55

0.75

1.0

0.80

1.0

2000

Symbol

Min.

Max.

Unit

•

1N6660 & 1N6660CCT1

•

1N6660R & 1N6660CAT1

•

1N6660DT1

T4-LDS-0015 Rev. 2 (101670)

Page 1 of 2

1N6660E3相似产品对比

	1N6660E3	JAN1N6660R	JANTX1N6660R	1N6660RE3
描述	Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 45V V(RRM), Silicon, TO-254AA, TO-254, 3 PIN	Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, Silicon, TO-254AA, HERMETIC SEALED, TO-254, 3 PIN	Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, Silicon, TO-254AA, HERMETIC SEALED, TO-254, 3 PIN	Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 45V V(RRM), Silicon, TO-254AA, TO-254, 3 PIN
厂商名称	Microsemi	Microsemi	Microsemi	Microsemi
包装说明	TO-254, 3 PIN	S-XSFM-P3	S-XSFM-P3	TO-254, 3 PIN
Reach Compliance Code	compliant	compliant	compliant	compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99
应用	POWER	EFFICIENCY	EFFICIENCY	POWER
配置	COMMON CATHODE, 2 ELEMENTS	COMMON ANODE, 2 ELEMENTS	COMMON ANODE, 2 ELEMENTS	COMMON ANODE, 2 ELEMENTS
二极管元件材料	SILICON	SILICON	SILICON	SILICON
二极管类型	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
JEDEC-95代码	TO-254AA	TO-254AA	TO-254AA	TO-254AA
JESD-30 代码	S-XSFM-P3	S-XSFM-P3	S-XSFM-P3	S-XSFM-P3
最大非重复峰值正向电流	300 A	300 A	300 A	300 A
元件数量	2	2	2	2
相数	1	1	1	1
端子数量	3	3	3	3
最大输出电流	15 A	30 A	30 A	15 A
封装主体材料	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
封装形状	SQUARE	SQUARE	SQUARE	SQUARE
封装形式	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
参考标准	MIL-19500/608	MIL	MIL	MIL-19500/608
表面贴装	NO	NO	NO	NO
技术	SCHOTTKY	SCHOTTKY	SCHOTTKY	SCHOTTKY
端子形式	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG
端子位置	SINGLE	SINGLE	SINGLE	SINGLE
Is Samacsys	-	N	N	N
Base Number Matches	-	1	1	1

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