D ts e t
aa h e
R c e t r lc r nc
o h se Ee to is
Ma u a t r dCo o e t
n fc u e
mp n n s
R c e tr b a d d c mp n ns ae
o h se rn e
o oet r
ma ua trd u ig ete dewaes
n fcue sn i r i/ fr
h
p rh s d f m te oiia s p l r
uc a e r
o h r n l u pi s
g
e
o R c e tr waes rce td f m
r o h se
fr e rae r
o
te oiia I. Al rce t n ae
h
r nl P
g
l e rai s r
o
d n wi tea p o a o teOC
o e t h p rv l f h
h
M.
P r aetse u igoiia fcoy
at r e td sn r n la tr
s
g
ts p o rmso R c e tr e eo e
e t rga
r o h se d v lp d
ts s lt n t g aa te p o u t
e t oui s o u rne
o
rd c
me t o e c e teOC d t s e t
es r x e d h
M aa h e.
Qu l yOv riw
ai
t
e ve
• IO- 0 1
S 90
•A 92 cr ct n
S 1 0 et ai
i
o
• Qu l e Ma ua trr Ls (
ai d
n fcues it QML MI- R -
) LP F
385
53
•C a sQ Mitr
ls
lay
i
•C a sVS a eL v l
ls
p c ee
• Qu l e S p l r Ls o D sr uos( L )
ai d u pi s it f it b tr QS D
e
i
•R c e trsacic l u pir oD A a d
o h se i
r ia s p l t L n
t
e
me t aln u t a dD A sa d r s
es lid sr n L tn ad .
y
R c e tr lcrnc , L i c mmi e t
o h se Ee t is L C s o
o
tdo
t
s p ligp o u t ta s t f c so r x e t-
u pyn rd cs h t ai y u tme e p ca
s
t n fr u lya daee u loto eoiial
i s o q ai n r q a t h s r n l
o
t
g
y
s p l db id sr ma ua trr.
u pi
e yn ut
y n fcues
T eoiia ma ua trr d ts e t c o a yn ti d c me t e e t tep r r n e
h r n l n fcue’ aa h e a c mp n ig hs o u n r cs h ef ma c
g
s
o
a ds e ic t n o teR c e tr n fcue v rino ti d vc . o h se Ee t n
n p c ai s f h o h se ma ua trd eso f hs e ie R c e tr lcr -
o
o
isg aa te tep r r n eo i s mio d co p o u t t teoiia OE s e ic -
c u rne s h ef ma c ft e c n u tr rd cs o h r n l M p c a
o
s
g
t n .T pc lv le aefr eee c p r o e o l. eti mii m o ma i m rt g
i s ‘y ia’ au s r o rfrn e up s s ny C r n nmu
o
a
r xmu ai s
n
ma b b s do p o u t h rceiain d sg , i lt n o s mpetsig
y e a e n rd c c aa tr t , e in smuai , r a l e t .
z o
o
n
© 2 1 R cetr l t n s LC Al i t R sre 0 1 2 1
0 3 ohs E cr i , L . lRg s eevd 7 1 0 3
e e oc
h
T l r m r, l s v iw wrcl . m
o e n oe p ae it w . e c o
a
e
s
o ec
8Mb: 512K x 18, 256K x 32/36
FLOW-THROUGH ZBT SRAM
8Mb
ZBT
®
SRAM
FEATURES
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
High frequency and 100 percent bus utilization
Fast cycle times: 10ns, 11ns and 12ns
Single +3.3V ±5% power supply (V
DD
)
Separate +3.3V or +2.5V isolated output buffer
supply (V
DD
Q)
Advanced control logic for minimum control
signal interface
Individual BYTE WRITE controls may be tied LOW
Single R/W# (read/write) control pin
CKE# pin to enable clock and suspend operations
Three chip enables for simple depth expansion
Clock-controlled and registered addresses, data
I/Os and control signals
Internally self-timed, fully coherent WRITE
Internally self-timed, registered outputs to
eliminate the need to control OE#
SNOOZE MODE for reduced-power standby
Common data inputs and data outputs
Linear or Interleaved Burst Modes
Burst feature (optional)
Pin/function compatibility with 2Mb, 4Mb, and
18Mb ZBT SRAM
100-pin TQFP
165-pin FBGA
Automatic power-down
MT55L512L18F, MT55L512V18F,
MT55L256L32F, MT55L256V32F,
MT55L256L36F, MT55L256V36F
3.3V V
DD
, 3.3V or 2.5V I/O
100-Pin TQFP
1
165-Pin FBGA
OPTIONS
• Timing (Access/Cycle/MHz)
7.5ns/10ns/100 MHz
8.5ns/11ns/90 MHz
9ns/12ns/83 MHz
• Configurations
3.3V I/O
512K x 18
256K x 32
256K x 36
2.5V I/O
512K x 18
256K x 32
256K x 36
• Package
100-pin TQFP
165-pin FBGA
• Operating Temperature Range
Commercial (0ºC to +70ºC)
Industrial (-40°C to +85°C)**
Part Number Example:
MARKING
-10
-11
-12
NOTE:
1. JEDEC-standard MS-026 BHA (LQFP).
* A Part Marking Guide for the FBGA devices can be found on Micron’s
Web site—http://www.micron.com/support/index.html.
** Industrial temperature range offered in specific speed grades and
configurations. Contact factory for more information.
MT55L512L18F
MT55L256L32F
MT55L256L36F
MT55L512V18F
MT55L256V32F
MT55L256V36F
T
F*
None
IT
GENERAL DESCRIPTION
The Micron
®
Zero Bus Turnaround
™
(ZBT
®
) SRAM
family employs high-speed, low-power CMOS designs
using an advanced CMOS process.
Micron’s 8Mb ZBT SRAMs integrate a 512K x 18,
256K x 32, or 256K x 36 SRAM core with advanced
synchronous peripheral circuitry and a 2-bit burst
counter. These SRAMs are optimized for 100 percent
bus utilization, eliminating any turnaround cycles for
READ to WRITE, or WRITE to READ, transitions. All
synchronous inputs pass through registers controlled
by a positive-edge-triggered single clock input (CLK).
The synchronous inputs include all addresses, all data
inputs, chip enable (CE#), two additional chip enables
for easy depth expansion (CE2, CE2#), cycle start input
MT55L256L32FT-11
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
MT55L512L18F_C.p65 – Rev. 2/02
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
FLOW-THROUGH ZBT SRAM
FUNCTIONAL BLOCK DIAGRAM
512K x 18
19
SA0, SA1, SA
MODE
CLK
CKE#
K
CE
ADV/LD#
K
WRITE ADDRESS
REGISTER
ADDRESS
REGISTER
19
SA1
D1
SA0
D0
17
Q1 SA1'
SA0'
Q0
19
19
O
U
T
P
U
T
B
U
F
F
E
R
S
E
19
BURST
LOGIC
ADV/LD#
BWa#
BWb#
R/W#
WRITE REGISTRY
AND DATA COHERENCY
CONTROL LOGIC
18
512K x 9 x 2
WRITE
DRIVERS
18
MEMORY
ARRAY
18
S
E
N
S
E
A
M
P
S
D
A
T
A
18
S
T
E
E
R
I
N
G
18
18
DQs
18
OE#
CE#
CE2
CE2#
READ LOGIC
INPUT
E
REGISTER
FUNCTIONAL BLOCK DIAGRAM
256K x 32/36
18
SA0, SA1, SA
MODE
CLK
CKE#
K
CE
ADV/LD#
K
WRITE ADDRESS
REGISTER
ADDRESS
REGISTER
18
SA1
D1
SA0
D0
16
Q1 SA1'
SA0'
Q0
18
18
O
U
T
P
U
T
B
U
F
F
E
R
S
E
18
BURST
LOGIC
ADV/LD#
BWa#
BWb#
BWc#
BWd#
R/W#
WRITE REGISTRY
AND DATA COHERENCY
CONTROL LOGIC
36
256K x 8 x 4
(x32)
WRITE
DRIVERS
36
256K x 9 x 4
36
(x36)
MEMORY
ARRAY
S
E
N
S
E
A
M
P
S
D
A
T
A
36
S
T
E
E
R
I
N
G
36
36
DQs
DQPa
DQPb
DQPc
DQPd
36
OE#
CE#
CE2
CE2#
INPUT
E
REGISTER
READ LOGIC
NOTE:
Functional block diagrams illustrate simplified device operation. See truth table, pin descriptions, and timing diagrams
for detailed information.
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
MT55L512L18F_C.p65 – Rev. 2/02
2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
FLOW-THROUGH ZBT SRAM
GENERAL DESCRIPTION (continued)
(ADV/LD#), synchronous clock enable (CKE#), byte
write enables (BWa#, BWb#, BWc#, and BWd#), and
read/write (R/W#).
Asynchronous inputs include the output enable
(OE#, which may be tied LOW for control signal mini-
mization), clock (CLK), and snooze enable (ZZ, which
may be tied LOW if unused). There is also a burst mode
pin (MODE) that selects between interleaved and linear
burst modes. MODE may be tied HIGH, LOW, or left
unconnected if burst is unused. The flow-through data-
out (Q) is enabled by OE#. WRITE cycles can be from
one to four bytes wide as controlled by the write control
inputs.
All READ, WRITE, and DESELECT cycles are initi-
ated by the ADV/LD# input. Subsequent burst ad-
dresses can be internally generated as controlled by the
burst advance pin (ADV/LD#). Use of burst mode is
optional. It is allowable to give an address for each
individual READ and WRITE cycle. BURST cycles wrap
around after the fourth access from a base address.
To allow for continuous, 100 percent use of the data
bus, the flow-through ZBT SRAM uses a LATE WRITE
cycle. For example, if a WRITE cycle begins in clock cycle
one, the address is present on rising edge one. BYTE
WRITEs need to be asserted on the same cycle as the
address. The write data associated with the address is
required one cycle later, or on the rising edge of clock
cycle two.
Address and write control are registered on-chip to
simplify WRITE cycles. This allows self-timed WRITE
cycles. Individual byte enables allow individual bytes to
be written. During a BYTE WRITE cycle, BWa# controls
DQa pins; BWb# controls DQb pins; BWc# controls
DQc pins; and BWd# controls DQd pins. Cycle types
can only be defined when an address is loaded, i.e.,
when ADV/LD# is LOW. Parity/ECC bits are available
only on the x18 and x36 versions.
Micron’s 8Mb ZBT SRAMs operate from a +3.3V V
DD
power supply, and all inputs and outputs are LVTTL-
compatible. Users can choose either a 3.3V or 2.5V I/O
version. The device is ideally suited for systems requir-
ing high bandwidth and zero bus turnaround delays.
Please refer to the Micron Web site
(www.micron.com/sramds) for the latest data sheet.
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
MT55L512L18F_C.p65 – Rev. 2/02
3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
FLOW-THROUGH ZBT SRAM
TQFP PIN ASSIGNMENT TABLE
PIN #
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
x18
NC
NC
NC
x32
NF
DQc
DQc
V
DD
Q
V
SS
DQc
DQc
DQc
DQc
V
SS
V
DD
Q
DQc
DQc
V
SS
1
V
DD
V
DD
2
V
SS
DQd
DQd
V
DD
Q
V
SS
DQd
DQd
DQd
DQd
x36
DQPc
DQc
DQc
PIN #
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
x18
x32
x36
V
SS
V
DD
Q
NC
DQd DQd
NC
DQd DQd
NC
NF
DQPd
MODE (LBO#)
SA
SA
SA
SA
SA1
SA0
DNU
DNU
V
SS
V
DD
DNU
DNU
SA
SA
SA
SA
SA
SA
SA
PIN #
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
x18
NC
NC
NC
x32
x36
NF
DQPa
DQa
DQa
DQa
DQa
V
DD
Q
V
SS
DQa DQa
DQa DQa
DQa
DQa
V
SS
V
DD
Q
DQa
DQa
ZZ
V
DD
V
SS
V
SS
DQb DQb
DQb DQb
V
DD
Q
V
SS
DQb DQb
DQb DQb
DQb DQb
DQb DQb
PIN #
76
77
78
79
80
81
82
83
84
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
x18
x32
x36
V
SS
V
DD
Q
DQb DQb
DQb DQb
NF
DQPb
SA
SA
SA
NF
3
ADV/LD#
OE# (G#)
CKE#
R/W#
CLK
V
SS
V
DD
CE2#
BWa#
BWb#
BWc# BWc#
BWd# BWd#
CE2
CE#
SA
SA
NC
NC
SA
NC
NC
DQb
DQb
DQc
DQc
DQc
DQc
NC
NC
DQb
DQb
DQc
DQc
DQb
DQb
DQd
DQd
DQa
DQa
NC
NC
DQb
DQb
DQb
NC
DQd
DQd
DQd
DQd
DQa
DQa
DQa
NC
NOTE:
1. Pins 14 and 66 do not have to be connected directly to V
SS
if the input voltage is
≤
V
IL
.
2. Pins 16 does not have to be connected directly to V
DD
if the input voltage is
≥
V
IH
.
3. Pin 84 is reserved for address expansion to 18Mb device.
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
MT55L512L18F_C.p65 – Rev. 2/02
4
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
电机控制
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
