Multi-Port SRAM, 4KX16, 35ns, CMOS, CQFP84, QFP-84
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | IDT (Integrated Device Technology) |
| 零件包装代码 | QFP |
| 包装说明 | QFF, |
| 针数 | 84 |
| Reach Compliance Code | compliant |
| ECCN代码 | EAR99 |
| 最长访问时间 | 35 ns |
| 其他特性 | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN |
| JESD-30 代码 | S-CQFP-F84 |
| JESD-609代码 | e0 |
| 长度 | 29.21 mm |
| 内存密度 | 65536 bit |
| 内存集成电路类型 | MULTI-PORT SRAM |
| 内存宽度 | 16 |
| 功能数量 | 1 |
| 端口数量 | 2 |
| 端子数量 | 84 |
| 字数 | 4096 words |
| 字数代码 | 4000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 70 °C |
| 最低工作温度 | |
| 组织 | 4KX16 |
| 输出特性 | 3-STATE |
| 可输出 | YES |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装代码 | QFF |
| 封装形状 | SQUARE |
| 封装形式 | FLATPACK |
| 并行/串行 | PARALLEL |
| 峰值回流温度（摄氏度） | 225 |
| 认证状态 | Not Qualified |
| 座面最大高度 | 3.556 mm |
| 最大供电电压 (Vsup) | 3.6 V |
| 最小供电电压 (Vsup) | 3 V |
| 标称供电电压 (Vsup) | 3.3 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | COMMERCIAL |
| 端子面层 | TIN LEAD |
| 端子形式 | FLAT |
| 端子节距 | 1.27 mm |
| 端子位置 | QUAD |
| 处于峰值回流温度下的最长时间 | 30 |
| 宽度 | 29.21 mm |
| IDT70V24L35F | IDT70V24L55F | IDT70V24S35F | IDT70V24S55F | IDT70V24L25F | IDT70V24S25F | |
|---|---|---|---|---|---|---|
| 描述 | Multi-Port SRAM, 4KX16, 35ns, CMOS, CQFP84, QFP-84 | Multi-Port SRAM, 4KX16, 55ns, CMOS, CQFP84, QFP-84 | Multi-Port SRAM, 4KX16, 35ns, CMOS, CQFP84, QFP-84 | Multi-Port SRAM, 4KX16, 55ns, CMOS, CQFP84, QFP-84 | Multi-Port SRAM, 4KX16, 25ns, CMOS, CQFP84, QFP-84 | Multi-Port SRAM, 4KX16, 25ns, CMOS, CQFP84, QFP-84 |
| 是否无铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 厂商名称 | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) |
| 零件包装代码 | QFP | QFP | QFP | QFP | QFP | QFP |
| 包装说明 | QFF, | QFF, | QFF, | QFF, | QFF, | QFF, |
| 针数 | 84 | 84 | 84 | 84 | 84 | 84 |
| Reach Compliance Code | compliant | compliant | compliant | compliant | compli | compli |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 最长访问时间 | 35 ns | 55 ns | 35 ns | 55 ns | 25 ns | 25 ns |
| 其他特性 | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN |
| JESD-30 代码 | S-CQFP-F84 | S-CQFP-F84 | S-CQFP-F84 | S-CQFP-F84 | S-CQFP-F84 | S-CQFP-F84 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 |
| 长度 | 29.21 mm | 29.21 mm | 29.21 mm | 29.21 mm | 29.21 mm | 29.21 mm |
| 内存密度 | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bi | 65536 bi |
| 内存集成电路类型 | MULTI-PORT SRAM | MULTI-PORT SRAM | MULTI-PORT SRAM | MULTI-PORT SRAM | MULTI-PORT SRAM | MULTI-PORT SRAM |
| 内存宽度 | 16 | 16 | 16 | 16 | 16 | 16 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端口数量 | 2 | 2 | 2 | 2 | 2 | 2 |
| 端子数量 | 84 | 84 | 84 | 84 | 84 | 84 |
| 字数 | 4096 words | 4096 words | 4096 words | 4096 words | 4096 words | 4096 words |
| 字数代码 | 4000 | 4000 | 4000 | 4000 | 4000 | 4000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
| 组织 | 4KX16 | 4KX16 | 4KX16 | 4KX16 | 4KX16 | 4KX16 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 可输出 | YES | YES | YES | YES | YES | YES |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| 封装代码 | QFF | QFF | QFF | QFF | QFF | QFF |
| 封装形状 | SQUARE | SQUARE | SQUARE | SQUARE | SQUARE | SQUARE |
| 封装形式 | FLATPACK | FLATPACK | FLATPACK | FLATPACK | FLATPACK | FLATPACK |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 峰值回流温度（摄氏度） | 225 | 225 | 225 | 225 | 225 | 225 |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 座面最大高度 | 3.556 mm | 3.556 mm | 3.556 mm | 3.556 mm | 3.556 mm | 3.556 mm |
| 最大供电电压 (Vsup) | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V |
| 最小供电电压 (Vsup) | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V |
| 标称供电电压 (Vsup) | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
| 表面贴装 | YES | YES | YES | YES | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| 端子面层 | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD |
| 端子形式 | FLAT | FLAT | FLAT | FLAT | FLAT | FLAT |
| 端子节距 | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm |
| 端子位置 | QUAD | QUAD | QUAD | QUAD | QUAD | QUAD |
| 处于峰值回流温度下的最长时间 | 30 | 30 | 30 | 30 | 30 | 30 |
| 宽度 | 29.21 mm | 29.21 mm | 29.21 mm | 29.21 mm | 29.21 mm | 29.21 mm |
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