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IDT70V07S25G

产品描述Dual-Port SRAM, 32KX8, 25ns, CMOS, CPGA68, 1.180 X 1.180 INCH, 0.160 INCH HEIGHT, PGA-68
产品类别存储    存储   
文件大小242KB,共18页
制造商IDT (Integrated Device Technology)
下载文档 详细参数 选型对比 全文预览

IDT70V07S25G概述

Dual-Port SRAM, 32KX8, 25ns, CMOS, CPGA68, 1.180 X 1.180 INCH, 0.160 INCH HEIGHT, PGA-68

IDT70V07S25G规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
厂商名称IDT (Integrated Device Technology)
零件包装代码PGA
包装说明PGA, PGA68,11X11
针数68
Reach Compliance Codenot_compliant
ECCN代码EAR99
最长访问时间25 ns
其他特性INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN
I/O 类型COMMON
JESD-30 代码S-CPGA-P68
JESD-609代码e0
长度29.464 mm
内存密度262144 bit
内存集成电路类型DUAL-PORT SRAM
内存宽度8
功能数量1
端口数量2
端子数量68
字数32768 words
字数代码32000
工作模式ASYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织32KX8
输出特性3-STATE
可输出YES
封装主体材料CERAMIC, METAL-SEALED COFIRED
封装代码PGA
封装等效代码PGA68,11X11
封装形状SQUARE
封装形式GRID ARRAY
并行/串行PARALLEL
峰值回流温度(摄氏度)225
电源3.3 V
认证状态Not Qualified
座面最大高度5.207 mm
最大待机电流0.006 A
最小待机电流3 V
最大压摆率0.17 mA
最大供电电压 (Vsup)3.6 V
最小供电电压 (Vsup)3 V
标称供电电压 (Vsup)3.3 V
表面贴装NO
技术CMOS
温度等级COMMERCIAL
端子面层Tin/Lead (Sn/Pb)
端子形式PIN/PEG
端子节距2.54 mm
端子位置PERPENDICULAR
处于峰值回流温度下的最长时间30
宽度29.464 mm

文档预览

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HIGH-SPEED 3.3V
32K x 8 DUAL-PORT
STATIC RAM
Integrated Device Technology, Inc.
IDT70V07S/L
FEATURES:
• True Dual-Ported memory cells which allow simulta-
neous access of the same memory location
• High-speed access
— Commercial: 25/35/55ns (max.)
• Low-power operation
— IDT70V07S
Active: 450mW (typ.)
Standby: 5mW (typ.)
— IDT70V07L
Active: 450mW (typ.)
Standby: 5mW (typ.)
• IDT70V07 easily expands data bus width to 16 bits or
more using the Master/Slave select when cascading
more than one device
• M/
S
= H for
BUSY
output flag on Master
M/
S
= L for
BUSY
input on Slave
• Busy and Interrupt Flags
• On-chip port arbitration logic
• Full on-chip hardware support of semaphore signaling
between ports
• Fully asynchronous operation from either port
• Devices are capable of withstanding greater than 2001V
electrostatic discharge
• LVTTL-compatible, single 3.3V (±0.3V) power supply
• Available in 68-pin PGA, 68-pin PLCC, and a 64-pin
TQFP
DESCRIPTION:
The IDT70V07 is a high-speed 32K x 8 Dual-Port Static
RAM. The IDT70V07 is designed to be used as a stand-alone
Dual-Port RAM or as a combination MASTER/SLAVE Dual-
Port RAM for 16-bit-or-more word systems. Using the IDT
MASTER/SLAVE Dual-Port RAM approach in 16-bit or wider
memory system applications results in full-speed, error-free
operation without the need for additional discrete logic.
FUNCTIONAL BLOCK DIAGRAM
OE
L
OE
R
R/
CE
L
R/
W
L
CE
R
W
R
I/O
0L
- I/O
7L
I/O
Control
I/O
Control
I/O
0R
-I/O
7R
BUSY
L
(1,2)
BUSY
R
Address
Decoder
15
(1,2)
A
14L
A
0L
MEMORY
ARRAY
Address
Decoder
A
14R
A
0R
15
OE
L
R/
CE
L
W
L
ARBITRATION
INTERRUPT
SEMAPHORE
LOGIC
CE
R
R/
OE
R
W
R
SEM
R
INT
R
SEM
L
(2)
INT
L
M/
S
(2)
2943 drw 01
NOTES:
1. (MASTER):
BUSY
is output; (SLAVE):
BUSY
is input.
2.
BUSY
and
INT
outputs are non-tri-stated push-pull.
COMMERCIAL TEMPERATURE RANGE
©1996 Integrated Device Technology, Inc.
For latest information contact IDT’s web site at www.idt.com or fax-on-demand at 408-492-8391.
OCTOBER 1996
DSC-2943/3
6.37
1

IDT70V07S25G相似产品对比

IDT70V07S25G IDT70V07L35G IDT70V07L25G
描述 Dual-Port SRAM, 32KX8, 25ns, CMOS, CPGA68, 1.180 X 1.180 INCH, 0.160 INCH HEIGHT, PGA-68 Dual-Port SRAM, 32KX8, 35ns, CMOS, CPGA68, 1.180 X 1.180 INCH, 0.160 INCH HEIGHT, PGA-68 Dual-Port SRAM, 32KX8, 25ns, CMOS, CPGA68, 1.180 X 1.180 INCH, 0.160 INCH HEIGHT, PGA-68
是否无铅 含铅 含铅 含铅
是否Rohs认证 不符合 不符合 不符合
厂商名称 IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology)
零件包装代码 PGA PGA PGA
包装说明 PGA, PGA68,11X11 PGA, PGA68,11X11 PGA, PGA68,11X11
针数 68 68 68
Reach Compliance Code not_compliant not_compliant _compli
ECCN代码 EAR99 EAR99 EAR99
最长访问时间 25 ns 35 ns 25 ns
其他特性 INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN
I/O 类型 COMMON COMMON COMMON
JESD-30 代码 S-CPGA-P68 S-CPGA-P68 S-CPGA-P68
JESD-609代码 e0 e0 e0
长度 29.464 mm 29.464 mm 29.464 mm
内存密度 262144 bit 262144 bit 262144 bi
内存集成电路类型 DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM
内存宽度 8 8 8
功能数量 1 1 1
端口数量 2 2 2
端子数量 68 68 68
字数 32768 words 32768 words 32768 words
字数代码 32000 32000 32000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 70 °C 70 °C 70 °C
组织 32KX8 32KX8 32KX8
输出特性 3-STATE 3-STATE 3-STATE
可输出 YES YES YES
封装主体材料 CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
封装代码 PGA PGA PGA
封装等效代码 PGA68,11X11 PGA68,11X11 PGA68,11X11
封装形状 SQUARE SQUARE SQUARE
封装形式 GRID ARRAY GRID ARRAY GRID ARRAY
并行/串行 PARALLEL PARALLEL PARALLEL
峰值回流温度(摄氏度) 225 225 225
电源 3.3 V 3.3 V 3.3 V
认证状态 Not Qualified Not Qualified Not Qualified
座面最大高度 5.207 mm 5.207 mm 5.207 mm
最大待机电流 0.006 A 0.003 A 0.003 A
最小待机电流 3 V 3 V 3 V
最大压摆率 0.17 mA 0.12 mA 0.14 mA
最大供电电压 (Vsup) 3.6 V 3.6 V 3.6 V
最小供电电压 (Vsup) 3 V 3 V 3 V
标称供电电压 (Vsup) 3.3 V 3.3 V 3.3 V
表面贴装 NO NO NO
技术 CMOS CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL COMMERCIAL
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子形式 PIN/PEG PIN/PEG PIN/PEG
端子节距 2.54 mm 2.54 mm 2.54 mm
端子位置 PERPENDICULAR PERPENDICULAR PERPENDICULAR
处于峰值回流温度下的最长时间 30 30 30
宽度 29.464 mm 29.464 mm 29.464 mm

 
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