PTFC262157FH
Thermally-Enhanced High Power RF LDMOS FET
200 W, 28 V, 2620 – 2690 MHz
Description
The PTFC262157FH LDMOS FET is designed for use in Doherty
cellular power applications in the 2620 MHz to 2690 MHz frequency
band. Input and output matching have been optimized for maximum
performance as the peak side transistor in a Doherty amplifier. Other
features include a thermally-enhanced package with earless flange.
Manufactured with Infineon's advanced LDMOS process, this device
provides excellent thermal performance and superior reliability.
PTFC262157FH
Package H-34288G-4/2
Two-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 1200 mA, ƒ = 2620 MHz,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
21
20
50
40
30
Features
•
Broadband internal matching, optimized for Doherty
peak side
•
Wide video bandwidth
•
Typical single-carrier WCDMA performance, 2690
MHz, 28 V, 10 dB PAR @ 0.01% CCDR
- Output power at P
1dB
= 50 W
- Efficiency = 29%
- Gain = 19.5 dB
- ACPR = –31.5 dBc at 2690 MHz
•
Capable of handling 10:1 VSWR @ 28 V,
180 W (CW) output power
•
Integrated ESD protection: Human Body Model,
Class 1C (per JESD22-A114)
•
Low thermal resistance
•
Pb-free and RoHS compliant
19
18
17
Gain
20
10
Efficiency
16
32
36
40
44
48
c262157sh-gr1
0
52
Output Power (dBm)
RF Characteristics
Single-carrier WCDMA Specifications
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 1150 mA, P
OUT
= 50 W average, ƒ = 2690 MHz, 3GPP WCDMA signal, 3.84 MHz bandwidth,10 dB PAR
@0.01% CCDF
Characteristic
Gain
Drain Efficiency
Adjacent Channel Power Ratio
Drain Efficiency (%)
Gain (dB)
Symbol
Gps
Min
18.0
27
—
Typ
19.5
29
–31.5
Max
—
—
–30
Unit
dB
%
dBc
h
D
ACPR
All published data at T
CASE
= 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 03.1, 2016-06-21
PTFC262157FH
DC Characteristics
Characteristic
Drain-source Breakdown Voltage
Drain Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
Symbol
V
(BR)DSS
I
DSS
I
DSS
I
GSS
R
DS(on)
V
GS
Min
65
—
—
—
—
—
Typ
—
—
—
—
0.05
2.65
Max
—
1.0
10.0
1.0
—
—
Unit
V
µA
µA
µA
Gate Leakage Current
On-state Resistance
Operating Gate Voltage
V
GS
= 10 V, V
DS
= 0 V
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 28 V, I
DQ
= 1.1 A
W
V
Maximum Ratings
Parameter
Drain-source Voltage
Gate-source Voltage
Operating Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C, 150 W CW)
Symbol
V
DSS
V
GS
V
DD
T
J
T
STG
R
q
JC
Value
65
–6 to +10
0 to +32
225
–65 to +150
0.34
Unit
V
V
V
°C
°C
°C/W
Ordering Information
Type and Version
PTFC262157FH V1 R0
PTFC262157FH V1 R250
Order Code
PTFC262157FHV1R0XTMA1
PTFC262157FHV1R250XTMA1
Package and Description
H-34288G-4/2, ceramic open-cavity,
earless
H-34288G-4/2, ceramic open-cavity,
earless
Shipping
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
Data Sheet
2 of 10
Rev. 03.1, 2016-06-21
PTFC262157FH
Typical Performance
(data taken in a reference test fixture)
Two-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 1200 mA, ƒ = 2655 MHz,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
21
20
50
40
21
20
Two-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 1200 mA, ƒ = 2690 MHz,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
50
40
30
Drain Efficiency (%)
Gain (dB)
19
18
17
16
32
30
19
Gain
Gain
18
17
16
32
36
40
44
48
20
10
0
20
10
Efficiency
c262157sh-gr3
Efficiency
c262157sh-gr2
0
36
40
44
48
52
52
Output Power (dBm)
Output Power (dBm)
Two-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 1200 mA, ƒ = 2620 MHz,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
-20
IMD Low
IMD Up
ACPR
Efficiency
Two-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 1200 mA, ƒ = 2655 MHz,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
60
-20
IMD Low
IMD Up
ACPR
Efficiency
60
IMD & ACPR (dBc)
Drain Efficiency (%)
-30
40
-30
40
-40
20
-40
20
-50
32
36
40
44
48
c262157sh-gr4
0
-50
32
36
40
44
48
c262157sh-gr5
0
52
52
Output Power (dBm)
Output Power (dBm)
Data Sheet
3 of 10
Rev. 03.1, 2016-06-21
Drain Efficiency (%)
IMD & ACPR (dBc)
Drain Efficiency (%)
Gain (dB)
PTFC262157FH
Typical Performance
(cont.)
Two-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 1200 mA, ƒ = 2690 MHz,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
-20
IMD Low
IMD Up
ACPR
Efficiency
Two-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 1200 mA,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
60
-20
2620 MHz
2655 MHz
2690 MHz
IMD & ACPR (dBc)
Drain Efficiency (%)
-25
-30
40
IMD (dBc)
-30
-40
20
-35
IMD Up
IMD Low
c262157sh-gr7
-50
32
36
40
44
48
c262157sh-gr6
0
52
-40
30
34
38
42
46
50
54
Output Power (dBm)
Output Power (dBm)
Small Signal CW Performance
V
DD
= 28 V, I
DQ
= 1200 mA
21
20
19
CW Performance
V
DD
= 28 V, I
DQ
= 1200 mA
2620 MHz
2655 MHz
2690 MHz
25
0
60
50
Power Gain (dB)
20
-10
Input Return Loss (dB)
Gain
15
-20
18
17
16
15
Gain
30
20
10
IRL
c262157sh-gr12
-30
Efficiency
c262157sh-gr8
10
0
5
2450
2550
2650
2750
-40
2850
34 36 38 40 42 44 46 48 50 52 54 56
Frequency (MHz)
Output Power (dBm)
Data Sheet
4 of 10
Rev. 03.1, 2016-06-21
Efficiency (%)
40
Gain (dB)
PTFC262157FH
Typical Performance
(cont.)
CW Performance
at selected V
DD
CW Performance
at selected V
DD
I
DQ
= 1200 mA, ƒ = 2620 MHz
21
20
V
DD
= 24 V
V
DD
= 28 V
V
DD
= 32 V
60
50
21
20
I
DQ
= 1200 mA, ƒ = 2655 MHz
V
DD
= 24 V
V
DD
= 28 V
V
DD
= 32 V
60
50
Power Gain (dB)
Power Gain (dB)
Efficiency (%)
19
18
17
16
40
Gain
30
20
10
18
17
16
Gain
30
20
10
Efficiency
15
c262157sh-gr9
Efficiency
15
c262157sh-gr11
0
0
34 36 38 40 42 44 46 48 50 52 54 56
34 36 38 40 42 44 46 48 50 52 54 56
c262157sh-gr10
Output Power (dBm)
Output Power (dBm)
I
D
Q
= 1200 mA, ƒ = 2690 MHz
21
20
V
DD
= 24 V
V
DD
= 28 V
V
DD
= 32 V
60
50
CW Performance
at selected V
DD
Power Gain (dB)
18
17
16
Gain
30
20
10
Efficiency
15
c262157sh-gr12
0
34 36 38 40 42 44 46 48 50 52 54 56
c262157sh-gr11
Output Power (dBm)
Data Sheet
Efficiency (%)
19
40
5 of 10
Rev. 03.1, 2016-06-21
Efficiency (%)
19
40
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