IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
BT136S-800E
4Q Triac
30 September 2013
Product data sheet
1. General description
Planar passivated sensitive gate four quadrant triac in a SOT428 (DPAK) surface-
mountable plastic package intended for use in general purpose bidirectional switching
and phase control applications. This sensitive gate "series E" triac is intended to be
interfaced directly to microcontrollers, logic integrated circuits and other low power gate
trigger circuits.
2. Features and benefits
•
•
•
•
•
•
•
Direct triggering from low power drivers and logic ICs
High blocking voltage capability
Low holding current for low current loads and lowest EMI at commutation
Planar passivated for voltage ruggedness and reliability
Sensitive gate
Surface mountable package
Triggering in all four quadrants
3. Applications
•
•
General purpose motor control
General purpose switching
4. Quick reference data
Table 1.
Symbol
V
DRM
I
TSM
I
T(RMS)
Quick reference data
Parameter
repetitive peak off-
state voltage
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
state current
t
p
= 20 ms;
Fig. 4; Fig. 5
RMS on-state current
full sine wave; T
mb
≤ 107 °C;
Fig. 1;
Fig. 2; Fig. 3
Static characteristics
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
-
4
10
mA
-
2.5
10
mA
Conditions
Min
-
-
-
Typ
-
-
-
Max
800
25
4
Unit
V
A
A
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NXP Semiconductors
BT136S-800E
4Q Triac
Symbol
Parameter
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G+;
T
j
= 25 °C;
Fig. 7
Min
-
-
-
Typ
5
11
2.2
Max
10
25
15
Unit
mA
mA
mA
I
H
holding current
V
D
= 12 V; T
j
= 25 °C;
Fig. 9
5. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
T1
T2
G
T2
main terminal 1
main terminal 2
gate
mounting base; main
terminal 2
2
1
3
Simplified outline
mb
Graphic symbol
T2
sym051
T1
G
DPAK (SOT428)
6. Ordering information
Table 3.
Ordering information
Package
Name
BT136S-800E
DPAK
Description
plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
Version
SOT428
Type number
BT136S-800E
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
30 September 2013
2 / 14
NXP Semiconductors
BT136S-800E
4Q Triac
7. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
full sine wave; T
mb
≤ 107 °C;
Fig. 1;
Fig. 2; Fig. 3
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
I t
dI
T
/dt
2
Conditions
Min
-
-
-
-
-
-
-
-
-
-
-
Max
800
4
25
27
3.1
50
50
50
10
2
5
0.5
150
125
Unit
V
A
A
A
2
I2t for fusing
rate of rise of on-state current
t
p
= 10 ms; SIN
I
T
= 6 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs;
T2+ G+
I
T
= 6 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs;
T2+ G-
I
T
= 6 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs;
T2- G-
I
T
= 6 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs;
T2- G+
A s
A/µs
A/µs
A/µs
A/µs
A
W
W
°C
°C
I
GM
P
GM
P
G(AV)
T
stg
T
j
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
over any 20 ms period
-
-40
-
BT136S-800E
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
30 September 2013
3 / 14
NXP Semiconductors
BT136S-800E
4Q Triac
5
I
T(RMS)
(A)
4
003aae828
I
T(RMS)
(A)
10
8
12
003aae830
3
6
2
4
1
2
0
10
- 2
0
- 50
0
50
100
T
mb
(°C)
150
10
- 1
1
10
surge duration (s)
Fig. 1.
RMS on-state current as a function of mounting
base temperature; maximum values
Fig. 2.
8
f = 50 Hz
T
mb
≤ 107 °C
RMS on-state current as a function of surge
duration; maximum values
003aae827
P
tot
(W)
conduction
form
angle
factor
(degrees)
a
30
4
6
60
2.8
90
2.2
120
1.9
180
1.57
α
α = 180°
120°
90°
60°
30°
4
2
0
0
1
2
3
4
I
T(RMS)
(A)
5
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3.
Total power dissipation as a function of RMS on-state current; maximum values
BT136S-800E
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
30 September 2013
4 / 14
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