VDI 75-06P1 VII 75-06P1
VID 75-06P1 VIO 75-06P1
IGBT Modules
in ECO-PAC 2
Short Circuit SOA Capability
Square RBSOA
Preliminary data sheet
VIO
IJK10
I
C25
= 69 A
= 600 V
V
CES
V
CE(sat) typ.
= 2.3 V
VII
OP9
VID
IK10
VDI
AC1
L9
X13
X15
SV18
L9
NTC
T16
PS18
A1
S18
LMN9
E2
GH10
NTC
L9
X15
F1
X15
NTC
X16
AC1
X16
B3
Pin arangement see outlines
K10
VX18
X16
IK10
IGBTs
Symbol
V
CES
V
GES
I
C25
I
C80
I
CM
V
CEK
t
SC
(SCSOA)
P
tot
Symbol
T
C
= 25°C
T
C
= 80°C
V
GE
= ±15 V; R
G
= 22
Ω;
T
VJ
= 125°C
RBSOA, Clamped inductive load; L = 100 µH
Conditions
T
VJ
= 25°C to 150°C
Maximum Ratings
600
± 20
V
de
69
48
A
A
100
V
CES
10
A
µs
W
208
2.3
2.8
2.8
6.5
0.8
4.4
100
50
55
300
30
1.8
1.4
2.8
1.2
V
V
V
mA
mA
nA
ns
ns
ns
ns
mJ
mJ
nF
0.6 K/W
K/W
ne
4.5
V
CE
= V
CES
; V
GE
= ±15 V; R
G
= 22
Ω;
T
VJ
= 125°C
non-repetitive
T
C
= 25°C
Conditions
w
r
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ. max.
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
R
thJC
R
thJH
I
C
= 75 A; V
GE
= 15 V; T
VJ
= 25°C
T
VJ
= 125°C
I
C
= 1 mA; V
GE
= V
CE
V
CE
= V
CES
;
fo
No
V
CE
= 0 V; V
GE
=
±
20 V
Inductive load, T
VJ
= 125°C
V
CE
= 300 V; I
C
= 40 A
V
GE
= 15/0 V; R
G
= 22
Ω
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
(per IGBT)
with heatsink compound (0.42 K/m.K; 50 µm)
t
V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
si
V
gn
Features
Advantages
• NPT IGBT's
- positive temperature coefficient of
saturation voltage
- fast switching
• FRED diodes
- fast reverse recovery
- low forward voltage
• Industry Standard Package
- solderable pins for PCB mounting
- isolated DCB ceramic base plate
• space and weight savings
• reduced protection circuits
• leads with expansion bend for stress relief
Typical Applications
• AC and DC motor control
• AC servo and robot drives
• power supplies
• welding inverters
Recommended replacement:
Please contact your local
sales office
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
1-4
0646
VDI 75-06P1 VII 75-06P1
VID 75-06P1 VIO 75-06P1
Reverse diodes (FRED)
Symbol
I
F25
I
F80
Symbol
V
F
I
RM
t
rr
R
thJC
R
thJH
Conditions
T
C
= 25°C
T
C
= 80°C
Conditions
I
F
= 40 A; T
VJ
= 25°C
T
VJ
= 125°C
I
F
= 30 A; di
F
/dt = 500 A/µs; T
VJ
= 125°C
V
R
= 300 V; V
GE
= 0 V
with heatsink compound (0.42 K/m.K; 50 µm)
VII
Maximum Ratings
56
35
A
A
Characteristic Values
min.
typ. max.
2.32
1.58
15
70
2.6
2.59
V
V
A
ns
1.3 K/W
K/W
B3
Temperature Sensor NTC
Symbol
R
25
B
25/50
Module
Symbol
T
VJ
T
stg
V
ISOL
M
d
a
Symbol
d
S
d
A
Weight
I
ISOL
≤
1 mA; 50/60 Hz
mounting torque (M4)
Max. allowable acceleration
Conditions
Conditions
Maximum Ratings
-40...+150
-40...+150
Conditions
T = 25°C
4.75
5.0
3375
5.25 kΩ
K
w
ne
11.2
11.2
24
VID
1.5 - 2.0
14 - 18
50
Characteristic Values
min. typ. max.
mm
mm
g
VDI
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
2-4
0646
Data according to IEC 60747 and refer to a single transistor or diode unless otherwise stated.
No
t
fo
r
Creepage distance on surface
(Pin to heatsink)
Strike distance in air
(Pin to heatsink)
de
°C
°C
3000
V~
Nm
lb.in.
m/s
2
si
gn
VIO
Characteristic Values
min. typ. max.
VDI 75-06P1 VII 75-06P1
VID 75-06P1 VIO 75-06P1
150
A
120
V
GE
= 17 V
15 V
13 V
150
A
120
90
11V
V
GE
= 17 V
15 V
13 V
I
C
I
C
90
60
T
VJ
= 25°C
11V
T
VJ
= 125°C
60
9V
30
0
0
1
2
3
4
V
CE
30
0
9V
42T60
42T60
5
V
6
0
1
2
3
4
V
CE
5
V
6
B3
Fig. 1 Typ. output characteristics
150
A
120
I
C
V
CE
= 20 V
Fig. 2 Typ. output characteristics
90
A
75
I
F
60
45
30
15
0
90
60
T
VJ
= 125°C
T
VJ
= 25°C
de
w
42T60
si
T
VJ
= 125°C
T
VJ
= 25°C
42T60
30
0
4
6
8
10
12
V
GE
gn
0,5
1,0
V
F
14
V
16
0,0
1,5
V
2,0
Fig. 3 Typ. transfer characteristics
ne
Fig. 4 Typ. forward characteristics of
free wheeling diode
50
40
A
I
RM
r
20
V
150
120
ns
90
T
VJ
= 125°C
V
R
= 300 V
I
F
= 30 A
I
RM
fo
15
V
GE
t
rr
t
rr
10
t
V
CE
= 300 V
I
C
= 50 A
30
20
10
42T60
5
No
60
30
42T60
0
0
40
80
120
Q
G
nC
0
0
200
400
600
-di/dt
0
160
800
A/μs
1000
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of
free wheeling diode
0646
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
3-4
VDI 75-06P1 VII 75-06P1
VID 75-06P1 VIO 75-06P1
10,0
mJ
E
on
100
ns
75
t
t
r
E
off
t
d(on)
4
mJ
E
off
400
ns
300
t
t
d(off)
7,5
3
5,0
V
CE
= 300 V
V
GE
= ±15 V
50
2
V
CE
= 300 V
V
GE
= ±15 V
R
G
= 22
Ω
T
VJ
= 125°C
200
2,5
E
on
R
G
= 22
Ω
T
VJ
= 125°C
42T60
25
1
100
t
f
0,0
0
40
80
I
C
A
0
0
0
40
80
I
C
A
42T60
120
0
120
B3
Fig. 7 Typ. turn on energy and switching
Fig. 8 Typ. turn off energy and switching
times versus collector current
4
mJ
E
on
t
d(on)
E
on
80
ns
60
t
E
off
3
mJ
gn
si
V
CE
= 300 V
V
GE
= ±15 V
I
C
= 50 A
T
VJ
= 125°C
600
ns
E
off
400
t
d(off)
t
3
t
r
V
CE
= 300 V
V
GE
= ±15 V
I
C
= 50 A
T
VJ
= 125°C
2
2
40
de
1
200
w
1
0
10
20
30
40
R
G
42T60
ne
50
Ω
60
20
0
0
10
20
30
40
R
G
t
f
42T60
50
Ω
60
0
Fig. 9 Typ. turn on energy and switching
Fig. 10 Typ. turn off energy and switching
times versus gate resistor
10
K/W
Z
thJC
1
IGBT
diode
A
I
CM
90
fo
No
t
R
G
= 22
Ω
T
VJ
= 125°C
120
r
0,1
0,01
single pulse
60
30
0,001
42T60
0
0
100
200
300
400
500
600
V
CE
700
V
0,0001
0,00001 0,0001 0,001
VID...75-06P1
0,01
0,1
t
1
s 10
Fig. 11 Reverse biased safe operating area
Fig. 12
Typ. transient thermal impedance
RBSOA
0646
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
4-4
嵌入式系统
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