Silicon Controlled Rectifier, 392.5A I(T)RMS, 250000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-209AD
| 参数名称 | 属性值 |
| 是否无铅 | 不含铅 |
| 是否Rohs认证 | 符合 |
| 包装说明 | POST/STUD MOUNT, O-MUPM-H3 |
| Reach Compliance Code | compli |
| 外壳连接 | ANODE |
| 标称电路换相断开时间 | 150 µs |
| 配置 | SINGLE |
| 关态电压最小值的临界上升速率 | 200 V/us |
| 最大直流栅极触发电流 | 200 mA |
| 最大直流栅极触发电压 | 3 V |
| 最大维持电流 | 250 mA |
| JEDEC-95代码 | TO-209AD |
| JESD-30 代码 | O-MUPM-H3 |
| JESD-609代码 | e2 |
| 最大漏电流 | 50 mA |
| 通态非重复峰值电流 | 7000 A |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 最大通态电流 | 250000 A |
| 最高工作温度 | 130 °C |
| 最低工作温度 | -40 °C |
| 封装主体材料 | METAL |
| 封装形状 | ROUND |
| 封装形式 | POST/STUD MOUNT |
| 峰值回流温度(摄氏度) | NOT SPECIFIED |
| 认证状态 | Not Qualified |
| 最大均方根通态电流 | 392.5 A |
| 重复峰值关态漏电流最大值 | 50000 µA |
| 断态重复峰值电压 | 800 V |
| 重复峰值反向电压 | 800 V |
| 表面贴装 | NO |
| 端子面层 | Tin/Silver (Sn/Ag) |
| 端子形式 | HIGH CURRENT CABLE |
| 端子位置 | UPPER |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 触发设备类型 | SCR |
| Base Number Matches | 1 |
| SKT250/08C | SKT250/04C | SKT300/08C | SKT300/12C | SKT300/04C | SKT300/06C | SKT250/06C | SKT250/12C | |
|---|---|---|---|---|---|---|---|---|
| 描述 | Silicon Controlled Rectifier, 392.5A I(T)RMS, 250000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-209AD | Silicon Controlled Rectifier, 392.5A I(T)RMS, 250000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-209AD | Silicon Controlled Rectifier, 471A I(T)RMS, 300000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-209AD | Silicon Controlled Rectifier, 471A I(T)RMS, 300000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-209AD | Silicon Controlled Rectifier, 471A I(T)RMS, 300000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-209AD | Silicon Controlled Rectifier, 471A I(T)RMS, 300000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-209AD | Silicon Controlled Rectifier, 392.5A I(T)RMS, 250000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-209AD, | Silicon Controlled Rectifier, 392.5A I(T)RMS, 250000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-209AD |
| 包装说明 | POST/STUD MOUNT, O-MUPM-H3 | POST/STUD MOUNT, O-MUPM-H3 | POST/STUD MOUNT, O-MUPM-H3 | POST/STUD MOUNT, O-MUPM-H3 | POST/STUD MOUNT, O-MUPM-H3 | POST/STUD MOUNT, O-MUPM-H3 | POST/STUD MOUNT, O-MUPM-H3 | POST/STUD MOUNT, O-MUPM-H3 |
| Reach Compliance Code | compli | compli | unknown | unknown | unknown | unknown | compli | compli |
| 外壳连接 | ANODE | ANODE | ANODE | ANODE | ANODE | ANODE | ANODE | ANODE |
| 标称电路换相断开时间 | 150 µs | 150 µs | 150 µs | 150 µs | 150 µs | 150 µs | 150 µs | 150 µs |
| 配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 关态电压最小值的临界上升速率 | 200 V/us | 200 V/us | 200 V/us | 200 V/us | 200 V/us | 200 V/us | 200 V/us | 200 V/us |
| 最大直流栅极触发电流 | 200 mA | 200 mA | 200 mA | 200 mA | 200 mA | 200 mA | 200 mA | 200 mA |
| 最大直流栅极触发电压 | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V |
| 最大维持电流 | 250 mA | 250 mA | 250 mA | 250 mA | 250 mA | 250 mA | 250 mA | 250 mA |
| JEDEC-95代码 | TO-209AD | TO-209AD | TO-209AD | TO-209AD | TO-209AD | TO-209AD | TO-209AD | TO-209AD |
| JESD-30 代码 | O-MUPM-H3 | O-MUPM-H3 | O-MUPM-H3 | O-MUPM-H3 | O-MUPM-H3 | O-MUPM-H3 | O-MUPM-H3 | O-MUPM-H3 |
| 最大漏电流 | 50 mA | 50 mA | 50 mA | 50 mA | 50 mA | 50 mA | 50 mA | 50 mA |
| 通态非重复峰值电流 | 7000 A | 7000 A | 11000 A | 11000 A | 11000 A | 11000 A | 7000 A | 7000 A |
| 元件数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
| 最大通态电流 | 250000 A | 250000 A | 300000 A | 300000 A | 300000 A | 300000 A | 250000 A | 250000 A |
| 最高工作温度 | 130 °C | 130 °C | 130 °C | 130 °C | 130 °C | 130 °C | 130 °C | 130 °C |
| 最低工作温度 | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C |
| 封装主体材料 | METAL | METAL | METAL | METAL | METAL | METAL | METAL | METAL |
| 封装形状 | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
| 封装形式 | POST/STUD MOUNT | POST/STUD MOUNT | POST/STUD MOUNT | POST/STUD MOUNT | POST/STUD MOUNT | POST/STUD MOUNT | POST/STUD MOUNT | POST/STUD MOUNT |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 最大均方根通态电流 | 392.5 A | 392.5 A | 471 A | 471 A | 471 A | 471 A | 392.5 A | 392.5 A |
| 重复峰值关态漏电流最大值 | 50000 µA | 50000 µA | 50000 µA | 50000 µA | 50000 µA | 50000 µA | 50000 µA | 50000 µA |
| 断态重复峰值电压 | 800 V | 400 V | 800 V | 1200 V | 400 V | 600 V | 600 V | 1200 V |
| 重复峰值反向电压 | 800 V | 400 V | 800 V | 1200 V | 400 V | 600 V | 600 V | 1200 V |
| 表面贴装 | NO | NO | NO | NO | NO | NO | NO | NO |
| 端子形式 | HIGH CURRENT CABLE | HIGH CURRENT CABLE | HIGH CURRENT CABLE | HIGH CURRENT CABLE | HIGH CURRENT CABLE | HIGH CURRENT CABLE | HIGH CURRENT CABLE | HIGH CURRENT CABLE |
| 端子位置 | UPPER | UPPER | UPPER | UPPER | UPPER | UPPER | UPPER | UPPER |
| 触发设备类型 | SCR | SCR | SCR | SCR | SCR | SCR | SCR | SCR |
| 厂商名称 | - | - | - | SEMIKRON | SEMIKRON | SEMIKRON | SEMIKRON | SEMIKRON |
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