CMPT591E
SURFACE MOUNT
PNP SILICON TRANSISTOR
Central
DESCRIPTION:
TM
Semiconductor Corp.
The CENTRAL SEMICONDUCTOR CMPT591E
type is a PNP silicon transistor manufactured by
the epitaxial planar process, epoxy molded in a
surface mount package, designed for high
current, general purpose amplifier applications.
Marking Code is C59.
SOT-23 CASE
MAXIMUM RATINGS:
(TA=25°C)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current
IC
Base Current
IB
Collector Current (Peak)
ICM
Power Dissipation
PD
Operating and Storage
Junction Temperature
TJ,Tstg
Θ
JA
Thermal Resistance
80
60
5.0
1.0
200
2.0
350
-65 to +150
357
UNITS
V
V
V
A
mA
A
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
ICBO
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(ON)
hFE
hFE
hFE
hFE
fT
Cob
TEST CONDITIONS
VCB=60V
VEB=4.0V
IC=100µA
IC=10mA
IE=100µA
IC=500mA, IB=50mA
IC=1.0A, IB=100mA
IC=1.0A, IB=100mA
VCE=5.0V, IC=1.0A
VCE=5.0V, IC=1.0mA
VCE=5.0V, IC=500mA
VCE=5.0V, IC=1.0A
VCE=5.0V, IC=2.0A
VCE=10V, IC=50mA, f=100MHz
VCB=10V, IE=0, f=1.0MHz
MIN
MAX
100
100
UNITS
nA
nA
V
V
V
V
V
V
V
80
60
5.0
0.20
0.40
1.1
1.0
200
200
50
15
150
600
10
MHz
pF
R2 ( 30-August 2001)