SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 5406, REV. -
SRADM1008
HERMETIC RAD HARD POWER MOSFET
FEATURES:
Low RDS(on)
Single Event Effect (SEE) hardened,
o
LET 85, Range: 118μm
VGS = -10V, VDS = 250V
VGS = -15V, VDS = 120V
o
LET 55, Range: 90μm
VGS = -15V, VDS = 250V
VGS = -20V, VDS = 160V
Total Ionization Dose (TID) hardened, 100kRad
Isolated TO-257 package
Near equivalent to IRHYS67234CM
MAXIMUM RATINGS
ALL RATINGS ARE AT T
C
= 25C UNLESS OTHERWISE SPECIFIED.
SYMBOL
V
DS
V
GS
I
D
I
D
I
DM
T
OP
/T
STG
P
D
R
thJC
E
AS
MIN.
-
-
-
-
-
-55
-
-
-
TYP.
-
-
-
-
-
-
-
-
60
MAX.
250
20
12.4
8
50
+150
75
1.66
-
UNITS
Volts
Volts
Amps
Amps
Amps
C
Watts
C/W
mJ
RATING
DRAIN TO SOURCE VOLTAGE
GATE TO SOURCE VOLTAGE
0
ON-STATE DRAIN CURRENT (Tc = 25 C)
0
ON-STATE DRAIN CURRENT (Tc = 100 C)
PULSED DRAIN CURRENT (LIMITED BY T
JMAX
)
OPERATING AND STORAGE TEMPERATURE
TOTAL DEVICE DISSIPATION
THERMAL RESISTANCE, JUNCTION TO CASE
SINGLE PULSE AVALANCHE (LIMITED BY T
JMAX
)
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
DRAIN SOURCE BREAKDOWN
V
GS
= 0V, I
D
= 250A
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
V
GS
= 10V, I
D
= 8A
GATE THRESHOLD VOLTAGE V
DS
= V
GS
, I
D
= 1mA
ZERO GATE VOLTAGE DRAIN CURRENT
V
DS
= 200V, V
GS
= 0V
GATE TO SOURCE LEAKAGE FORWARD V
GS
= 20V
GATE TO SOURCE LEAKAGE REVERSE V
GS
= -20V
TURN ON DELAY TIME
V
DD
= 0.5V
DS
,
RISE TIME
I
D
= 8A,
TURN OFF DELAY TIME
R
G
= 4.7
FALL TIME
SYMBOL
B
VDSS
R
DS(ON)
V
GS(th)
I
DSS
I
GSS
t
d(ON)
t
r
t
d(OFF)
t
f
MIN.
250
-
2.0
-
-
-
-
-
-
-
TYP.
-
-
-
-
-
-
-
-
-
-
MAX.
-
0.13
4.0
25
100
-100
25
25
35
20
UNITS
Volts
Volts
A
nA
nsec
DIODE FORWARD VOLTAGE
I
S
=12.4A
REVERSE RECOVERY TIME
If = 12.4A,
di/dt = 100A/µs
INPUT CAPACITANCE
V
GS
= 0 V
OUTPUT CAPACITANCE
V
DS
= 100 V
REVERSE TRANSFER CAPACITANCE f = 1.0MHz
TOTAL GATE CHARGE
V
DD
=0.5V
DS
, I
D
= 12.4A, V
GS
= 10V
V
SD
t
rr
C
iss
C
oss
C
rss
Q
G
-
-
-
-
-
-
-
-
1600
120
3
-
1.2
400
-
-
-
42
Volts
nsec
pF
nC
2013
Sensitron Semiconductor
221 West Industry Court
Deer Park, NY 11729-4681
PHONE (631) 586-7600
FAX (631) 242-9798
www.sensitron.com
sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 5406, REV. -
SRADM1008
MECHANICAL DIMENSIONS: in Inches / mm
.150 (3.81
Dia.
.140 3.56)
.420 (10.67
.410 10.41)
.200 (5.08
.190 4.82)
.045 (1.14
.035 0.89)
.537 (13.64
.527 13.39)
1.132 (28.75
1.032 26.21)
.665 (16.89
.645 16.38)
.430 (10.92
.410 10.41)
1
2
3
.035 (0.89
.025 0.63)
3 Places
.100(2.54) BSC
2 Places
.120(3.05) BSC
TO-257
DEVICE TYPE
N-CHANNEL MOSFET
TO-257 PACKAGE
PIN-1
DRAIN
PIN-2
SOURCE
PIN-3
GATE
**NOTE:
This product is subject to the International Traffic in Arms Regulations (ITAR), 22 C.F.R. Parts 120 - 130, and
may not be exported without the appropriate U.S. Department of State authorization.
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the
datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical
equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’
fail-safe precautions or other arrangement .
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of
the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any
other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at
a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron
Semiconductor.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder
maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When
exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.
2013
Sensitron Semiconductor
221 West Industry Court
Deer Park, NY 11729-4681
PHONE (631) 586-7600
FAX (631) 242-9798
www.sensitron.com
sales@sensitron.com
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