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MUR140-B

产品描述Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2
产品类别分立半导体    二极管   
文件大小78KB,共3页
制造商Diodes Incorporated
标准
下载文档 详细参数 选型对比 全文预览

MUR140-B概述

Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2

MUR140-B规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证符合
厂商名称Diodes Incorporated
零件包装代码DO-41
包装说明ROHS COMPLIANT, PLASTIC PACKAGE-2
针数2
Reach Compliance Codecompliant
ECCN代码EAR99
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)1.05 V
JEDEC-95代码DO-41
JESD-30 代码O-PALF-W2
JESD-609代码e3
湿度敏感等级1
最大非重复峰值正向电流35 A
元件数量1
端子数量2
最高工作温度175 °C
最低工作温度-65 °C
最大输出电流1 A
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式LONG FORM
峰值回流温度(摄氏度)260
认证状态Not Qualified
最大重复峰值反向电压400 V
最大反向恢复时间0.075 µs
表面贴装NO
端子面层Bright Tin (Sn)
端子形式WIRE
端子位置AXIAL
处于峰值回流温度下的最长时间40

MUR140-B文档预览

MUR140 - MUR160
1.0A SUPER-FAST RECTIFIER
Features
·
·
·
·
·
·
Glass Passivated Die Construction
Super-Fast Recovery Time For High Efficiency
Low Forward Voltage Drop and High Current Capability
Surge Overload Rating to 35A Peak
Ideally Suited for Automated Assembly
Lead Free Finish, RoHS Compliant (Note 5)
C
A
B
A
Mechanical Data
·
·
·
·
·
·
·
·
Case: DO-41
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish
¾
Bright Tin. Solderable per
MIL-STD-202, Method 208
Marking: MUR140: R140
MUR160: R160
Polarity: Cathode Band
Mounting Position: Any
Weight: 0.35 grams (approximate)
Dim
A
B
C
D
D
DO-41 Plastic
Min
25.40
4.06
0.71
2.00
Max
¾
5.21
0.864
2.72
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@ T
T
= 120°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
(JEDEC Method)
Forward Voltage
Peak Reverse Current
at Rated DC Blocking Voltage
Reverse Recovery Time (Note 2)
Reverse Recovery Time (Note 3)
Forward Recovery Time (Note 4)
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Notes:
1.
2.
3.
4.
5.
@ T
A
= 25°C unless otherwise specified
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
FM
I
RM
t
rr
t
rr
t
fr
C
j
R
qJA
T
j
, T
STG
MUR140
400
283
1.0
35
1.25
1.05
5.0
150
50
75
50
45
72
-65 to +175
MUR160
600
424
Unit
V
V
A
A
V
mA
ns
ns
ns
pF
K/W
°C
@ I
F
= 1.0A, T
J
= 25°C
@ I
F
= 1.0A, T
J
= 150°C
@ T
A
= 25°C
@ T
A
= 150°C
Measured at 1.0MHz and applied reverse voltage of 0V DC.
Measured with I
F
= 0.5A, I
R
= 1.0A, I
rr
= 0.25A. See Figure 5.
Measured with I
F
= 1A, di/dt = 50A/us.
Measured with I
F
= 1.0A, di/dt = 100A/ms, Duty Cycle
£
2.0%.
RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see
EU Directive Annex Notes 5 and 7.
DS30112 Rev. 6 - 2
1 of 3
www.diodes.com
MUR140 - MUR160
ã
Diodes Incorporated
3
I
O
, AVERAGE FORWARD CURRENT (A)
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
10.0
7.0
5.0
3.0
2.0
1.0
0.5
T
C
= 25 C
0
175 C
0
100 C
0
2
1
0.1
0.05
0
0
25
50
75
100
125
150
175
T
T
, TERMINAL TEMPERATURE (
°
C)
Fig. 1 Forward Current Derating Curve
0.01
0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3
V
F
, INSTANTANEOUS VOLTAGE (V)
Fig. 2 Typical Forward Current
I
FSM
, PEAK FORWARD SURGE CURRENT (A)
60
Single Half-Sine-Wave
(JEDEC Method)
80
40
20
8.0
4.0
2.0
0.8
T
J
= 100 C
0
50
T
J
= 175 C
0
40
30
20
0.4
0.2
0.08
0.04
0.02
10
0.008
0
1
10
NUMBER OF CYCLES AT 60Hz
Fig. 3 Surge Current Derating Curve
100
T
J
= 25 C
0
0.004
0.002
0
50
100 150 200 250 300 350 400 450 500
V
R
, REVERSE VOLTAGE (V)
Fig. 4 Typical Reverse Current
t
rr
+0.5A
Device
Under
Test
(-)
Pulse
Generator
(Note 2)
0A
(+)
50V DC
Approx
-0.25A
(-)
Oscilloscope
(Note 1)
(+)
-1.0A
Set time base for 50/100 ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
DS30112 Rev. 6 - 2
2 of 3
www.diodes.com
MUR140 - MUR160
Ordering Information
Device
MUR140-A
MUR140-B
MUR140-T
MUR160-A
MUR160-B
MUR160-T
Notes:
(Note 6)
Packaging
DO-41
DO-41
DO-41
DO-41
DO-41
DO-41
Shipping
5K/Ammo Pack
1K/Bulk
5K/Tape & Reel, 13-inch
5K/Ammo Pack
1K/Bulk
5K/Tape & Reel, 13-inch
6. For packaging details, visit our website at http://www.diodes.com/datasheets/ap02008.pdf
DS30112 Rev. 6 - 2
3 of 3
www.diodes.com
MUR140 - MUR160

MUR140-B相似产品对比

MUR140-B MUR140-A MUR160-B MUR160-A
描述 Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2 Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2 Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2 Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2
是否无铅 含铅 含铅 含铅 含铅
是否Rohs认证 符合 符合 符合 符合
厂商名称 Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
零件包装代码 DO-41 DO-41 DO-41 DO-41
包装说明 ROHS COMPLIANT, PLASTIC PACKAGE-2 ROHS COMPLIANT, PLASTIC PACKAGE-2 ROHS COMPLIANT, PLASTIC PACKAGE-2 ROHS COMPLIANT, PLASTIC PACKAGE-2
针数 2 2 2 2
Reach Compliance Code compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99
外壳连接 ISOLATED ISOLATED ISOLATED ISOLATED
配置 SINGLE SINGLE SINGLE SINGLE
二极管元件材料 SILICON SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) 1.05 V 1.05 V 1.05 V 1.05 V
JEDEC-95代码 DO-41 DO-41 DO-41 DO-41
JESD-30 代码 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
JESD-609代码 e3 e3 e3 e3
湿度敏感等级 1 1 1 1
最大非重复峰值正向电流 35 A 35 A 35 A 35 A
元件数量 1 1 1 1
端子数量 2 2 2 2
最高工作温度 175 °C 175 °C 175 °C 175 °C
最低工作温度 -65 °C -65 °C -65 °C -65 °C
最大输出电流 1 A 1 A 1 A 1 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 ROUND ROUND ROUND ROUND
封装形式 LONG FORM LONG FORM LONG FORM LONG FORM
峰值回流温度(摄氏度) 260 260 260 260
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified
最大重复峰值反向电压 400 V 400 V 600 V 600 V
最大反向恢复时间 0.075 µs 0.075 µs 0.075 µs 0.075 µs
表面贴装 NO NO NO NO
端子面层 Bright Tin (Sn) Bright Tin (Sn) Bright Tin (Sn) Bright Tin (Sn)
端子形式 WIRE WIRE WIRE WIRE
端子位置 AXIAL AXIAL AXIAL AXIAL
处于峰值回流温度下的最长时间 40 40 40 40

 
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