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AP9A107B-12VI: 产品描述Standard SRAM, 128KX8, 12ns, CMOS, PDSO32, 0.400 INCH, SOJ-32; 产品类别存储存储; 文件大小599KB，共10页; 制造商Integrated Silicon Solution ( ISSI )

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AP9A107B-12VI概述

Standard SRAM, 128KX8, 12ns, CMOS, PDSO32, 0.400 INCH, SOJ-32

AP9A107B-12VI规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	Integrated Silicon Solution ( ISSI )
包装说明	0.400 INCH, SOJ-32
Reach Compliance Code	compliant
最长访问时间	12 ns
I/O 类型	COMMON
JESD-30 代码	R-PDSO-J32
JESD-609代码	e0
长度	21 mm
内存密度	1048576 bit
内存集成电路类型	STANDARD SRAM
内存宽度	8
功能数量	1
端子数量	32
字数	131072 words
字数代码	128000
工作模式	ASYNCHRONOUS
最高工作温度	85 °C
最低工作温度	-40 °C
组织	128KX8
输出特性	3-STATE
封装主体材料	PLASTIC/EPOXY
封装代码	SOJ
封装等效代码	SOJ32,.44
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
并行/串行	PARALLEL
电源	5 V
认证状态	Not Qualified
座面最大高度	3.7 mm
最大待机电流	0.02 A
最小待机电流	4.5 V
最大压摆率	0.15 mA
最大供电电压 (Vsup)	5.5 V
最小供电电压 (Vsup)	4.5 V
标称供电电压 (Vsup)	5 V
表面贴装	YES
技术	CMOS
温度等级	INDUSTRIAL
端子面层	Tin/Lead (Sn/Pb)
端子形式	J BEND
端子节距	1.27 mm
端子位置	DUAL
宽度	10.2 mm

AP9A107B-12VI相似产品对比

	AP9A107B-12VI	AP9A107B-15TC	AP9A107B-10VC	AP9A107B-20VC	AP9A107B-20VI	AP9A107B-12VC	AP9A107B-15VC	AP9A107B-12TC	AP9A107B-15VI	AP9A107B-20TC
描述	Standard SRAM, 128KX8, 12ns, CMOS, PDSO32, 0.400 INCH, SOJ-32	Standard SRAM, 128KX8, 15ns, CMOS, PDSO32, TSOP-32	Standard SRAM, 128KX8, 10ns, CMOS, PDSO32, 0.400 INCH, SOJ-32	Standard SRAM, 128KX8, 20ns, CMOS, PDSO32, 0.400 INCH, SOJ-32	Standard SRAM, 128KX8, 20ns, CMOS, PDSO32, 0.400 INCH, SOJ-32	Standard SRAM, 128KX8, 12ns, CMOS, PDSO32, 0.400 INCH, SOJ-32	Standard SRAM, 128KX8, 15ns, CMOS, PDSO32, 0.400 INCH, SOJ-32	Standard SRAM, 128KX8, 12ns, CMOS, PDSO32, TSOP-32	Standard SRAM, 128KX8, 15ns, CMOS, PDSO32, 0.400 INCH, SOJ-32	Standard SRAM, 128KX8, 20ns, CMOS, PDSO32, TSOP-32
是否Rohs认证	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合
包装说明	0.400 INCH, SOJ-32	TSOP-32	0.400 INCH, SOJ-32	0.400 INCH, SOJ-32	0.400 INCH, SOJ-32	0.400 INCH, SOJ-32	0.400 INCH, SOJ-32	TSOP-32	0.400 INCH, SOJ-32	TSOP-32
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compli	compli	compli
最长访问时间	12 ns	15 ns	10 ns	20 ns	20 ns	12 ns	15 ns	12 ns	15 ns	20 ns
I/O 类型	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 代码	R-PDSO-J32	R-PDSO-G32	R-PDSO-J32	R-PDSO-J32	R-PDSO-J32	R-PDSO-J32	R-PDSO-J32	R-PDSO-G32	R-PDSO-J32	R-PDSO-G32
JESD-609代码	e0	e0	e0	e0	e0	e0	e0	e0	e0	e0
长度	21 mm	18.4 mm	21 mm	21 mm	21 mm	21 mm	21 mm	18.4 mm	21 mm	18.4 mm
内存密度	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bi	1048576 bi	1048576 bi
内存集成电路类型	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
内存宽度	8	8	8	8	8	8	8	8	8	8
功能数量	1	1	1	1	1	1	1	1	1	1
端子数量	32	32	32	32	32	32	32	32	32	32
字数	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words
字数代码	128000	128000	128000	128000	128000	128000	128000	128000	128000	128000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	85 °C	70 °C	70 °C	70 °C	85 °C	70 °C	70 °C	70 °C	85 °C	70 °C
组织	128KX8	128KX8	128KX8	128KX8	128KX8	128KX8	128KX8	128KX8	128KX8	128KX8
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	SOJ	TSSOP	SOJ	SOJ	SOJ	SOJ	SOJ	TSSOP	SOJ	TSSOP
封装等效代码	SOJ32,.44	TSSOP32,.8,20	SOJ32,.44	SOJ32,.44	SOJ32,.44	SOJ32,.44	SOJ32,.44	TSSOP32,.8,20	SOJ32,.44	TSSOP32,.8,20
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	SMALL OUTLINE	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
电源	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	3.7 mm	1.2 mm	3.7 mm	3.7 mm	3.7 mm	3.7 mm	3.7 mm	1.2 mm	3.7 mm	1.2 mm
最大待机电流	0.02 A	0.015 A	0.015 A	0.015 A	0.02 A	0.015 A	0.015 A	0.015 A	0.02 A	0.015 A
最小待机电流	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
最大压摆率	0.15 mA	0.115 mA	0.14 mA	0.11 mA	0.13 mA	0.12 mA	0.115 mA	0.12 mA	0.14 mA	0.11 mA
最大供电电压 (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
最小供电电压 (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
标称供电电压 (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	INDUSTRIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL
端子面层	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
端子形式	J BEND	GULL WING	J BEND	J BEND	J BEND	J BEND	J BEND	GULL WING	J BEND	GULL WING
端子节距	1.27 mm	0.5 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	0.5 mm	1.27 mm	0.5 mm
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
宽度	10.2 mm	8 mm	10.2 mm	10.2 mm	10.2 mm	10.2 mm	10.2 mm	8 mm	10.2 mm	8 mm
厂商名称	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	-	-	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )

AP9A107B-12VI

AP9A107B-12VI概述

AP9A107B-12VI规格参数

AP9A107B-12VI相似产品对比

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