Datasheet> 器件分类 > 分立半导体> 晶体管> RN1102FT(TE85L)

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RN1102FT(TE85L): 产品描述RN1102FT(TE85L); 产品类别分立半导体晶体管; 文件大小624KB，共8页; 制造商Toshiba(东芝); 官网地址http://toshiba-semicon-storage.com/

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RN1102FT(TE85L)概述

RN1102FT(TE85L)

RN1102FT(TE85L)规格参数

参数名称	属性值
厂商名称	Toshiba(东芝)
包装说明	,
Reach Compliance Code	unknown

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RN1101FT~RN1106FT

TOSHIBA Transistor

Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

RN1101FT, RN1102FT, RN1103FT

RN1104FT, RN1105FT, RN1106FT

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications

Unit: mm

•

High-density mount is possible because of devices housed in very thin

TESM packages.

Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enable the manufacture of ever more compact

equipment and save assembly cost.

Wide range of resistor values are available to use in various circuit

designs.

Complementary to RN2101FT to RN2106FT

•

Equivalent Circuit and Bias Resistor Values

Type No.

RN1101FT

RN1102FT

RN1103FT

RN1104FT

RN1105FT

RN1106FT

R1 (kΩ)

4.7

2.2

4.7

R2 (kΩ)

4.7

JEDEC

JEITA

TOSHIBA

―

2-1B1A

Weight:2.2 mg (typ.)

Absolute Maximum Ratings

(Ta = 25°C)

Characteristics

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

RN1101FT to 1106FT

RN1101FT to 1104FT

RN1105FT, RN1106FT

Symbol

CBO

CEO

EBO

stg

Rating

100

150

−55

to 150

Unit

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if

the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2010-03-07

RN1102FT(TE85L)相似产品对比

	RN1102FT(TE85L)	RN1101FT(TE85L,F)	RN1106FT(TE85L)	RN1106FT(TE85L,F)	RN1103FT(TE85L)	RN1104FT(TE85L)	RN1104FT(TE85L,F)	RN1102FT(TE85L,F)	RN1105FT(TE85L,F)	RN1105FT(TE85L)
描述	RN1102FT(TE85L)	PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR	RN1106FT(TE85L)	PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR	RN1103FT(TE85L)	RN1104FT(TE85L)	PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR	PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR	PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR	RN1105FT(TE85L)
厂商名称	Toshiba(东芝)	Toshiba(东芝)	Toshiba(东芝)	Toshiba(东芝)	Toshiba(东芝)	Toshiba(东芝)	Toshiba(东芝)	Toshiba(东芝)	Toshiba(东芝)	Toshiba(东芝)
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown

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