CT4148WN
Small signal switching
Diodes
Foward Power Dissipation 400mW
FEATURES
Silicon epitaxial planar diode
SMD chip pattern, available in various dimension
included 0805 &0603
Fast switching diode.
MECHANICAL DATA
Case : 1206
Polarity : Color band denotes cathode
Weight : 0.01 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PARAMETER
Reverse voltage
Peak reverse voltage
Forward continuous current
Average rectified current sin half wave rectification with
resistive load
Surge forward current t<1s and Tj=25℃
t<=8.3mS and Tj=25℃
Forward voltage If=10mA
If=100mA
Leakage current VR=20V
VR=75V
VR=20V, Tj=150℃
Capacitance VF=VR=0V
Reverse recovery time
Power dissipation
Power derating above 25℃
Typical thermal resistance junction to ambient
Operating Temperature Range
Storage Temperature Range
SYMBOL
Value
100
100
300
150
500
1000
1.0
1.25
25
5.0
50
4
4
400
3.2
375
-55 to +150
-55 to +150
UNIT
V
V
mA
mA
mA
V
nA
uA
uA
pF
nS
mW
mW/℃
K/W
℃
℃
VR
VRM
I
FM
I
F(av)
IFSM
V
F
IR
C
tot
trr
Ptot
R
Θ
ja
T
J
T
STG
1 OF
2
CT4148WN
CT4148WN
TYPICAL CHARACTERISTICS
Figure 1. Forward Characteristic
.
Figure 2. Power De-rating
500
400
Ptot-Admissible Power
Dissipation/ mW
300
200
100
0
0
20
40
60
80
100 120 140 160
180 200
Tamb-Ambient Temperature/oC
Figure 3. Forward Current De-rating
500
Figure 4. Reverse Voltage De-rating
200
.
400
300
IF/ mA
.
VR/ V
.
100
200
100
0
0
20
40
60
80
100 120 140 160
180 200
.
0
0
20
40
60
80
100
120
140
Tamb-Ambient Temperature/oC
Tamb-Ambient Temperature/oC
2
OF
2
CT4148WN
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