SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0689, Rev. -
30WQ20FN
Green Products
30WQ20FN SCHOTTKY RECTIFIER
Applications:
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•
•
•
•
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Disk drives
Switching power supply
Converters
Free-Wheeling diodes
Reverse battery protection
Battery charging
Features:
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•
•
•
•
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Popular DPAK outline
Small foot print, surface mountable
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term reliability
Green products in compliance with the ROHS directive
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
Mechanical Dimensions: In mm / Inches
DPAK
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FAX (86) 25-87123900
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World Wide Web Site - http://www.sangdest.com.cn
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E-Mail Address - sales@ sangdest.com.cn
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•
Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907
•
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0689, Rev. -
30WQ20FN
Green Products
Marking Diagram:
Where XXXXX is YYWWL
30WQ20FN
SSG
YY
WW
L
= Part Name
= SSG
= Year
= Week
= Lot Number
Cautions：
Molding resin
Epoxy resin UL:94V-0
Ordering Information:
Device
30WQ20FN
Package
DPAK
(Pb-Free)
Shipping
2500 pcs / reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification.
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Average Forward Current*
(per device)
Peak One Cycle Non-
Repetitive Surge Current
Symbol
V
RWM
I
F(AV)
I
FSM
Condition
-
C,
50% duty cycle @T
C
= 134°
rectangular wave form
8.3 ms, half Sine pulse
Max.
200
3.5
84
Units
V
A
A
•
FAX (86) 25-87123900
•
World Wide Web Site - http://www.sangdest.com.cn
•
E-Mail Address - sales@ sangdest.com.cn
•
•
Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907
•
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0689, Rev. -
30WQ20FN
Green Products
Electrical Characteristics:
Characteristics
Forward Voltage Drop*
Reverse Current *
Symbol
V
F1
V
F2
I
R1
I
R2
Junction Capacitance
(per leg)
Typical Series Inductance
(per leg)
Max. Voltage Rate of Change
*
Pulse Width < 300µs, Duty Cycle <2%
C
T
L
S
dv/dt
Condition
@ 3A, Pulse, T
J
= 25
°C
@ 3A, Pulse, T
J
= 125
°C
@V
R
= rated V
R
T
J
= 25
°C
@V
R
= rated V
R
T
J
= 125
°C
@V
R
= 5V, T
C
= 25
°C
f
SIG
= 1MHz
Measured lead to lead 5 mm
from package body
-
Max.
0.89
0.71
1.00
5
60
5.0
10,000
Units
V
V
mA
mA
pF
nH
V/µs
Thermal-Mechanical Specifications:
Characteristics
Junction Temperature
Storage Temperature
Maximum Thermal
Resistance Junction to Case
(per leg)
Approximate Weight
Case Style
Symbol
T
J
T
stg
R
θJC
wt
Condition
-
-
DC operation
-
DPAK
Specification
-40 to +175
-40 to +175
4.7
0.39
Units
°C
°C
°C/W
g
•
FAX (86) 25-87123900
•
World Wide Web Site - http://www.sangdest.com.cn
•
E-Mail Address - sales@ sangdest.com.cn
•
•
Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907
•
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0689, Rev. -
30WQ20FN
Green Products
•
FAX (86) 25-87123900
•
World Wide Web Site - http://www.sangdest.com.cn
•
E-Mail Address - sales@ sangdest.com.cn
•
•
Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907
•
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0689, Rev. -
30WQ20FN
Green Products
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve
product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
sales department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or
by means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of
SMC - Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
•
FAX (86) 25-87123900
•
World Wide Web Site - http://www.sangdest.com.cn
•
E-Mail Address - sales@ sangdest.com.cn
•
•
Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907
•
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