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1N5399S-G

产品描述Rectifier Diode, 1 Phase, 1 Element, 1.5A, 1000V V(RRM), Silicon, DO-15, PLASTIC PACKAGE-2
产品类别分立半导体    二极管   
文件大小137KB,共3页
制造商Sangdest Microelectronics (Nanjing) Co Ltd
标准
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1N5399S-G概述

Rectifier Diode, 1 Phase, 1 Element, 1.5A, 1000V V(RRM), Silicon, DO-15, PLASTIC PACKAGE-2

1N5399S-G规格参数

参数名称属性值
是否Rohs认证符合
包装说明O-PALF-W2
Reach Compliance Codeunknow
其他特性HIGH RELIABILITY
应用GENERAL PURPOSE
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
JEDEC-95代码DO-15
JESD-30 代码O-PALF-W2
湿度敏感等级1
最大非重复峰值正向电流50 A
元件数量1
相数1
端子数量2
最大输出电流1.5 A
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式LONG FORM
峰值回流温度(摄氏度)NOT SPECIFIED
认证状态Not Qualified
最大重复峰值反向电压1000 V
表面贴装NO
端子形式WIRE
端子位置AXIAL
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1

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SENSITRON

SEMICONDUCTOR
Data Sheet 2579, Rev. —

Features



1N5391S –

1N5399S

1.5A SILICON RECTIFIER


Diffused Junction

Fast Switching for High Efficiency
                                                     

High Current Capability and Low Forward Voltage Drop

Low Reverse Leakage Current

Surge Overload Rating to 50 A Peak
Mechanical Data


Plastic Material – UL Flammability Classification Rating 94V-0
                                                          
DO-41
Max
                                                                



Case: Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: Cathode Band
Maximum Ratings and Electrical Characteristics

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.


Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@T
A
= 70°C
B
B

Weight: 0.30 grams (approx.)

Mounting Position: Any

Marking: Type Number

Dim
A
B
C
D
Min
Min
Max
25.4
4.06 5.21
0.71 0.864
2.00 2.72
In mm
1.000
0.159 0.205
0.028 0.034
0.079 0.107
In inch
@T
A
=25°C unless otherwise specified
B
B
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
1N
5391S
50
35
1N
1N
1N
1N
1N
1N
5392S 5393S 5395S 5397S 5398S 5399S
100
70
200
140
400
280
1.5
600
420
800
560
1000
700
Unit
V
V
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
@I
F
= 1.5A
B
B
I
FSM
V
FM
I
RM
C
j
R
θJA
T
j
T
STG
50
1.1
5.0
50
20
55
-65 to +150
-65 to +150
A
V
µA
pF
K/W
°C
°C
@T
A
= 25°C
@T
A
= 100°C
B
B
B
B
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Ambient
(Note 1)
Operating Temperature Range
Storage Temperature Range
*Glass passivated forms are available upon request
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.

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