MNT
MicroNova Technology
914 Harpeth Valley Place Nashville, TN 37221
Tel: 615.662.1200 Fax: 615.662.1226
www.micronovatech.com
PRODUCT DATA
LDT918
and
LDT918T
Micro-LID NPN Transistors
For Information & Sales Contact
MicroNova Technology
tlh@micronovatech.com
or
sales@micronovatech.com
MicroNova Technology
Product Data
November 2002
Micro-LID Transistors
LDT918 and LDT918T
Description:
The LDT918 (untinned) and LDT918T (tinned) are NPN silicon transistors in very
small, rugged, surface mount, 4-post ceramic packages (MNT package p/n 029-
017). The LDT918 and LDT918T meet the general specifications of the 2N918
transistor. The 029-017 Micro-LID package is a 4-post, leadless ceramic carrier
which can be provided with gold metallized or pre-tinned lands, and is approved
for military, medical implant, sensor, and high reliability applications. The LDT918
and LDT918T can be provided with special feature options such as additional
temperature cycling and screening.
Maximum Ratings:
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Dissipation
Operating Junction Temperature
Storage Temperature
Operating Temperature
Symbol
Vcbo
Vceo
Vebo
Ic
Pt
Tj
Tstg
Toper
Rating
30 V
15 V
3V
50 mA
400 mW
150°C
-65°C to 150°C
-55°C to 125°C
Data Sheet LDT918 / LDT918T
Rev. B
Page 2 of 4
MicroNova Technology
Product Data
November 2002
Micro-LID Transistors
LDT918 and LDT918T
______________________________________________________________________________________
Outline / Schematic:
TOP VIEW
3
.040
2
3, 4
2
1
4
1
.075
SIDE VIEW
END VIEW
.035
SUBSTRATE / CIRCUIT BOARD
Dimensions / Marking:
Length
Width
Height
.075′′ + .003′′
.040′′ + .003′′
.035′′ + .003′′
Post 1 (Emitter)
Post 2 (Base)
Post 3, 4 (Collector)
.015′′ x .010′′ typ
.015′′ x .010′′ typ
.015′′ x .012′′ typ
Marking on back of package: Gray Dot over Emitter and Red Dot in Center
(post down configuration)
Standard In-Process Screening Requirements:
Semiconductor die and Micro-LID package visual inspection
Wire pull test
24 hour stabilization bake at 150°C
10 temperature cycles from –55°C to 125°C
100% electrical test of dc characteristics at 25°C
Final visual inspection
________________________________________________________________
Data Sheet LDT918 / LDT918T
Rev. B
Page 3 of 4
MicroNova Technology
Product Data
November 2002
Micro-LID Transistors
LDT918 and LDT918T
Electrical Characteristics (25°C Ambient)
Parameter
Collector-Base Breakdown
Ic = 10 uA, Ie = 0
Collector-Emitter Breakdown*
Ib = 0, Ic = 10 mA
Emitter-Base Breakdown
Ic = 0, Ie = 10 uA
Collector-Base Cutoff Current
Vcb = 15 V
DC Forward Current Gain*
Ic = 3 mA, Vce = 1 V
Ic = 10 mA, Vce = 10 V
Collector-Emitter Saturation
Ic = 10 mA, Ib = 1 mA
Base-Emitter Saturation
Ic = 10 mA, Ib = 1 mA
Collector Capacitance
Vcb = 10 V, Ie = 0
f = 1 MHz
Symbol
BVcbo
BVceo
BVebo
Icbo
Hfe
20
20
Vce (sat)
Vbe (sat)
Cobo
--
--
--
--
--
--
--
--
200
--
.4
1
1.7
V
V
pF
Min
30
15
3
--
Typ
--
--
--
--
Max
--
--
--
10
Units
V
V
V
nA
* Pulse test, pulse width < 300 usec, duty cycle < 2%
Data Sheet LDT918 / LDT918T
Rev. B
Page 4 of 4
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