Memory IC,
| 参数名称 | 属性值 |
| 厂商名称 | Cypress(赛普拉斯) |
| 包装说明 | , |
| Reach Compliance Code | compliant |
| S72NS128RD0AHBGC3 | S72NS512RE0AHGGC0 | S72NS512RE0AHGGC3 | S72NS512RE0AHGLC0 | |
|---|---|---|---|---|
| 描述 | Memory IC, | Memory Circuit, Flash+SDRAM, 32MX16, CMOS, PBGA133, | Memory Circuit, Flash+SDRAM, 32MX16, CMOS, PBGA133, | Memory Circuit, Flash+SDRAM, 32MX16, CMOS, PBGA133, |
| 厂商名称 | Cypress(赛普拉斯) | Cypress(赛普拉斯) | Cypress(赛普拉斯) | Cypress(赛普拉斯) |
| Reach Compliance Code | compliant | compliant | compliant | compliant |
| 是否Rohs认证 | - | 符合 | 符合 | 符合 |
| JESD-30 代码 | - | S-PBGA-B133 | S-PBGA-B133 | S-PBGA-B133 |
| 内存密度 | - | 536870912 bit | 536870912 bit | 536870912 bit |
| 内存集成电路类型 | - | MEMORY CIRCUIT | MEMORY CIRCUIT | MEMORY CIRCUIT |
| 内存宽度 | - | 16 | 16 | 16 |
| 混合内存类型 | - | FLASH+SDRAM | FLASH+SDRAM | FLASH+SDRAM |
| 端子数量 | - | 133 | 133 | 133 |
| 字数 | - | 33554432 words | 33554432 words | 33554432 words |
| 字数代码 | - | 32000000 | 32000000 | 32000000 |
| 最高工作温度 | - | 85 °C | 85 °C | 85 °C |
| 最低工作温度 | - | -25 °C | -25 °C | -25 °C |
| 组织 | - | 32MX16 | 32MX16 | 32MX16 |
| 封装主体材料 | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | - | FBGA | FBGA | FBGA |
| 封装等效代码 | - | BGA133,14X14,20 | BGA133,14X14,20 | BGA133,14X14,20 |
| 封装形状 | - | SQUARE | SQUARE | SQUARE |
| 封装形式 | - | GRID ARRAY, FINE PITCH | GRID ARRAY, FINE PITCH | GRID ARRAY, FINE PITCH |
| 电源 | - | 1.8 V | 1.8 V | 1.8 V |
| 认证状态 | - | Not Qualified | Not Qualified | Not Qualified |
| 标称供电电压 (Vsup) | - | 1.8 V | 1.8 V | 1.8 V |
| 表面贴装 | - | YES | YES | YES |
| 技术 | - | CMOS | CMOS | CMOS |
| 温度等级 | - | OTHER | OTHER | OTHER |
| 端子形式 | - | BALL | BALL | BALL |
| 端子节距 | - | 0.5 mm | 0.5 mm | 0.5 mm |
| 端子位置 | - | BOTTOM | BOTTOM | BOTTOM |
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