MBRTA60035(R)L
Low V
F
Silicon Power
Schottky Diode
Features
• High Surge Capability
• Type 35 V V
RRM
• Isolation Type Package
• Electrically Isolated Base Plate
• Not ESD Sensitive
Heavy Three Tower Package
V
RRM
= 35 V
I
F(AV)
= 600 A
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC bl ki voltage
M i
blocking lt
Operating temperature
Storage temperature
Symbol
V
RRM
V
RMS
V
DC
T
j
T
stg
Conditions
MBRTA60035(R)L
35
25
35
-55 to 150
-55 to 150
Unit
V
V
V
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Average forward current (per pkg)
Peak forward surge current
(per leg)
Maximum instantaneous forward voltage (per
leg)
Maximum instantaneous reverse
current at rated DC blocking voltage
(per leg)
Symbol
I
F(AV)
I
FSM
V
F
I
R
Conditions
T
C
= 100 °C
t
p
= 8.3 ms, half sine
I
FM
= 300 A, Tj = 25 °C
T
j
= 25 °C
T
j
= 100 °C
MBRTA60035(R)L
600
4000
0.60
3
300
Unit
A
A
V
mA
Thermal characteristics
Maximum thermal resistance,
junction - case (per leg)
R
ΘJC
0.28
°C/W
www.genesicsemi.com/silicon-products/schottky-rectifiers/
1
MBRTA60035(R)L
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
www.genesicsemi.com/silicon-products/schottky-rectifiers/
3
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