GBJ606: 产品描述2.8 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE; 产品类别分立半导体二极管; 文件大小63KB，共2页; 制造商Goodwork Semiconductor ( GW ); 官网地址http://www.goodwork.com.tw/

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GBJ606概述

2.8 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE

GBJ606规格参数

参数名称	属性值
厂商名称	Goodwork Semiconductor ( GW )
Reach Compliance Code	unknow
Is Samacsys	N
配置	BRIDGE, 4 ELEMENTS
二极管类型	BRIDGE RECTIFIER DIODE
最大正向电压 (VF)	1 V
最大非重复峰值正向电流	170 A
元件数量	4
最高工作温度	150 °C
最大输出电流	2.8 A
最大重复峰值反向电压	800 V
表面贴装	NO
Base Number Matches	1

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GBJ601

THRU

GBJ607

SINGLE PHASE 6.0 AMP BRIDGE RECTIFIERS

VOLTAGE RANGE

50 to 1000 Volts

CURRENT

6.0 Amperes

GBJ

1.193(30.3)

1.169(29.7)

.134(3.4)

.122(3.1)

.189(4.8)

.173(4.4)

.150(3.8)

.134(3.4)

.441(11.2)

.425(10.8)

FEATURES

* Ideal for printed circuit board

* Low forward voltage

* Low leakage current

* Mounting position: Any

.094(2.4)

.078(2.0)

.043(1.1)

.035(0.9)

.165(4.2)

.142(3.6)

.708(18.0)

.669(17.0)

.800(20.3)

.776(19.7)

.189

(4.8)

.402(10.2) .303(7.7) .303(7.7)

SPACING

.386(9.8) .287(7.3) .287(7.3)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating 25 C ambient temperature uniess otherwies specified.

Single phase half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

.114(2.9)

.098(2.5)

.031(0.8)

.023(0.6)

Dimensions in inches and (millimeters)

TYPE NUMBER

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward (with heatsink Note 2)

Rectified Current at Tc=100 C (Without heatsink)

Peak Forward Surge Current, 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)

Maximum Forward Voltage Drop per Bridge Element at 3.0A D.C.

Maximum DC Reverse Current

Ta=25 C

at Rated DC Blocking Voltage

Typical Junction Capacitance (Note 1)

Typical Thermal Resistance R

(Note 2)

Operating Temperature Range, T

Storage Temperature Range, T

STG

NOTES:

GBJ601 GBJ602 GBJ603 GBJ604 GBJ605 GBJ606 GBJ607

UNITS

100

200

140

200

400

280

400

6.0

2.8

170

1.1

5.0

500

3.4

-55 +150

600

420

600

800

560

800

1000

700

1000

C/W

Ta=100 C

1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

2. Thermal Resistance from Junction to Case with device mounted on 75mm x 75mm x 1.6mm Cu Plate Heatsink.

284

GBJ606相似产品对比

	GBJ606	GBJ601	GBJ602	GBJ603	GBJ604	GBJ605	GBJ607
描述	2.8 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE	2.8 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE	6 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE	2.8 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE	6 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE	2.8 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE	2.8 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
厂商名称	Goodwork Semiconductor ( GW )	Goodwork Semiconductor ( GW )	Goodwork Semiconductor ( GW )	Goodwork Semiconductor ( GW )	Goodwork Semiconductor ( GW )	-	-
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	-	-
配置	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	-	-
二极管类型	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	-	-
最大正向电压 (VF)	1 V	1 V	1 V	1 V	1 V	-	-
最大非重复峰值正向电流	170 A	170 A	170 A	170 A	170 A	-	-
元件数量	4	4	4	4	4	-	-
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C	-	-
最大输出电流	2.8 A	2.8 A	2.8 A	2.8 A	2.8 A	-	-
最大重复峰值反向电压	800 V	50 V	100 V	200 V	400 V	-	-
表面贴装	NO	NO	NO	NO	NO	-	-

GBJ606

GBJ606在线购买

GBJ606概述

GBJ606规格参数

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GBJ606相似产品对比

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