1N5817-1N5819
1N5817 - 1N5819
Features
•
•
1.0 ampere operation at T
A
= 90°C
with no thermal runaway.
For use in low voltage, high
frequency inverters free
wheeling, and polarity
protection applications.
DO-41
COLOR BAND DENOTES CATHODE
Schottky Rectifiers
Absolute Maximum Ratings*
Symbol
V
RRM
I
F(AV)
I
FSM
T
stg
T
J
T
A
= 25°C unless otherwise noted
Parameter
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
.375 " lead length @ T
A
= 90°C
Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave
Storage Temperature Range
Operating Junction Temperature
20
Value
1N5817 1N5818
30
1.0
1N5819
40
Units
V
A
25
-65 to +125
-65 to +125
A
°C
°C
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
P
D
R
θJA
Power Dissipation
Thermal Resistance, Junction to Ambient
Parameter
Value
1.25
80
Units
W
°C/W
Electrical Characteristics
Symbol
V
F
I
R
C
T
Forward Voltage
Reverse Current @ rated V
R
Total Capacitance
V
R
= 4.0 V, f = 1.0 MHz
T
A
= 25°C unless otherwise noted
Parameter
@ 1.0 A
@ 3.0 A
T
A
= 25°C
T
A
= 100°C
450
750
Device
1N5817 1N5818
550
875
0.5
10
110
1N5819
600
900
Units
mV
mV
mA
mA
pF
2001
Fairchild Semiconductor Corporation
1N5817-1N5819, Rev. C
1N5817-1N5819
Schottky Rectifiers
(continued)
Typical Characteristics
Average Rectified Forward Current, I
F
[A]
1
20
10
Forward Current, I
F
[A]
1N5817
0.75
SINGLE PHASE
HALF WAVE
60HZ
RESISTIVE OR
INDUCTIVE LOAD
.375" 9.5 mm LEAD
LENGTHS
1N5819
0.5
1
1N5818
0.25
0
T
J
= 25
º
C
µ
Pulse Width = 300µS
1% Duty Cycle
0
20
40
60
80
100
Lead Temperature [ºC]
120
140
0.1
0.2
0.4
0.6 0.8
1
1.2 1.4 1.6
Forward Voltage, V
F
[V]
1.8
2
Figure 1. Forward Current Derating Curve
Figure 2. Forward Voltage Characteristics
Peak Forward Surge Current, I
FSM
[A]
30
25
20
15
10
5
0
8.3ms Single Half Sine-Wave
JEDEC Method
400
Total Capacitance, C
T
[pF]
200
T
J
= 25
º
C
100
80
60
40
20
10
0.1
1
2
5
10
20
Number of Cycles at 60Hz
50
100
0.5 1
5 10
Reverse Voltage, V
R
[V]
40 60 100
Figure 3. Non-Repetitive Surge Current
Figure 4. Total Capacitance
2001
Fairchild Semiconductor Corporation
1N5817-1N5819, Rev. C
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not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E
2
CMOS
TM
EnSigna
TM
FACT™
FACT Quiet Series™
DISCLAIMER
FAST
®
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®
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QS™
QT Optoelectronics™
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®
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STAR*POWER™
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®
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STAR*POWER is used under license
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DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
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As used herein:
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support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose
be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance
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with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
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