Target Specifications
Datasheet
RJF0612JPE
60V - 50A - N Channel Thermal FET
Power Switching
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..
R07DS0887EJ0200
Rev.2.00
Jan 29, 2014
Features
•
•
•
•
•
•
•
Logic level operation (4 V Gate drive).
Built-in the over temperature shut-down circuit.
High endurance capability against to the short circuit.
Latch type shut down operation (need 0 voltage recovery).
Built-in the current limitation circuit.
Power supply voltage applies 12 V and 24 V.
AEC-Q101 Compliant
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (S)-(1) )
4
Current
Limitation
Circuit
Gate
Shut-down
Circuit
1. Gate
2. Drain
3. Source
4. Drain
D
G
1
2
Gate Resistor
Temperature
Sensing
Circuit
3
Latch
Circuit
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Drain to source voltage
V
DSS
Gate to source voltage
V
GSS
Gate to source voltage
V
GSS
Drain current
I
D Note3
Body-drain diode reverse drain current
I
DR
Note 2
Avalanche current
I
AP
Avalanche energy
E
AR Note 2
Channel dissipation
Pch
Note 1
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. Value at Tc = 25°C
2. Tch = 25°C, Rg
≥
50
Ω
3. It provides by the current limitation lower bound value.
Ratings
60
16
–2.5
50
50
15
964
100
150
–55 to +150
Unit
V
V
V
A
A
A
mJ
W
°C
°C
R07DS0887EJ0200 Rev.2.00
Jan 29, 2014
Page 1 of 7
RJF0612JPE
Target Specifications
Typical Operation Characteristics
(Ta = 25°C)
Item
Input voltage
Input current
(Gate non shut down)
Input current
(Gate shut down)
Shut down temperature
Gate operation voltage
Drain current
(Current limitation value)
Notes: 4. Pulse test
Symbol
V
IH
V
IL
I
IH1
I
IH2
I
IL
I
IH(sd)1
I
IH(sd)2
Tsd
Vop
I
D limt
Min
3.5
—
—
—
—
—
—
—
3.5
50
Typ
—
—
—
—
—
0.8
0.35
175
—
—
Max
—
1.2
100
50
1
—
—
—
12
—
Unit
V
V
μA
μA
μA
mA
mA
°C
V
A
Test Conditions
Vi = 8 V, V
DS
= 0
Vi = 3.5 V, V
DS
= 0
Vi = 1.2 V, V
DS
= 0
Vi = 8 V, V
DS
= 0
Vi = 3.5 V, V
DS
= 0
Channel temperature
V
GS
= 5 V, V
DS
= 10 V
Note 4
Electrical Characteristics
(Ta = 25°C)
Item
Drain current
Symbol
I
D1
I
D2
I
D3
V
(BR)DSS
V
(BR)GSS
V
(BR)GSS
I
GSS1
I
GSS2
I
GSS3
I
GSS4
I
GS(OP)1
I
GS(OP)2
I
DSS
V
GS(off)
|y
fs
|
R
DS(on)
R
DS(on)
Coss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
t
os1
t
os2
Min
—
—
50
60
16
–2.5
—
—
—
—
—
—
—
1.1
26
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
—
—
—
0.8
0.35
—
—
80
7.8
5.9
1974
14.0
63.2
57.4
84.5
0.9
112
0.5
0.36
Max
170
10
—
—
—
—
100
50
1
–100
—
—
10
2.1
—
10
7.5
—
—
—
—
—
—
—
—
—
Unit
A
mA
A
V
V
V
μA
μA
μA
μA
mA
mA
μA
V
S
mΩ
mΩ
pF
μs
μs
μs
μs
V
ns
ms
ms
Test Conditions
V
GS
= 3.5 V, V
DS
= 10 V
Note 5
V
GS
= 1.2 V, V
DS
= 10 V
V
GS
= 5 V, V
DS
= 10 V
Note 5
I
D
= 10 mA, V
GS
= 0
I
G
= 800
μA,
V
DS
= 0
I
G
= –100
μA,
V
DS
= 0
V
GS
= 8 V, V
DS
= 0
V
GS
= 3.5 V, V
DS
= 0
V
GS
= 1.2 V, V
DS
= 0
V
GS
= –2.4 V, V
DS
= 0
V
GS
= 8 V, V
DS
= 0
V
GS
= 3.5 V, V
DS
= 0
V
DS
= 32 V, V
GS
= 0, Tc = 110°C
V
DS
= 10 V, I
D
= 1 mA
I
D
= 25 A, V
DS
= 10 V
Note 5
I
D
= 25 A, V
GS
= 4 V
Note 5
I
D
= 25 A, V
GS
= 10 V
Note 5
V
DS
= 10 V, V
GS
= 0, f = 1MHz
V
GS
= 5 V, I
D
= 25 A, R
L
= 1.2
Ω
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Input current (shut down)
Zero gate voltage drain current
Gate to source cutoff voltage
Forward transfer admittance
Static drain to source on state
resistance
Output capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward
voltage
Body-drain diode reverse
recovery time
Over load shut down
Note 6
operation time
I
F
= 50 A, V
GS
= 0
Note 5
I
F
= 50 A, V
GS
= 0
di
F
/dt = 50 A/μs
V
GS
= 5 V, V
DD
= 16 V
V
GS
= 5 V, V
DD
= 24 V
Notes: 5. Pulse test
6. Including the junction temperature rise of the over loaded condition.
R07DS0887EJ0200 Rev.2.00
Jan 29, 2014
Page 2 of 7
RJF0612JPE
Target Specifications
Main Characteristics
Power vs. Temperature Derating
200
1000
Maximum Safe Operation Area
Thermal shut down
operation area
Channel Dissipation Pch (W)
150
Drain Current I
D
(A)
100
1
m
s
100
10
DC Operation
(Tc = 25°C)
PW = 10 ms
50
1
Operation in this area
is limited by R
DS(on)
Ta = 25°C
0
50
100
150
200
0.1
0.1
1
10
100
Case temperature Tc (°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
200
10 V
7.0 V
Typical Transfer Characteristics
50
V
DS
= 10 V
Pulse Test
Drain Current I
D
(A)
150
5.0 V
Drain Current I
D
(A)
4.0 V
40
30
100
4.5 V
V
GS
= 3.5 V
20
50
10
Tc = 75°C
25°C
Pulse Test
0
2
4
6
8
10
0
1
2
3
4
5
Drain to Source Voltage V
DS
(V)
Drain to Saturation Voltage vs.
Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS(on)
(mV)
Pulse Test
300
Gate to Source Voltage V
GS
(V)
Static Drain to Source State Resistance
vs. Drain Current
Drain Source On Sate Resistance
R
DS(on)
(mΩ)
1000
Pulse Test
400
100
200
I
D
= 25 A
100
10
4V
V
GS
= 10 V
10 A
5A
2
4
6
8
10
1
1
10
100
0
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
R07DS0887EJ0200 Rev.2.00
Jan 29, 2014
Page 3 of 7
RJF0612JPE
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance |yfs| (S)
14
Pulse Test
12
I
D
= 25, 10 A
10
8
6
4
V
GS
= 4 V
10 A
I
D
= 25 A
V
GS
= 10 V
0
25
50
75 100 125 150
5A
1000
Target Specifications
Forward Transfer Admittance vs.
Drain Current
V
DS
= 10 V
Pulse Test
Tc = 25°C
Static Drain to Source on State Resistance
R
DS (on)
(mΩ)
100
75°C
10
5A
1
2
-50 -25
0.1
0.1
1
10
100
Case Temperature
Tc (°C)
Drain Current I
D
(A)
Body-Drain Diode Reverse
Recovery Time
Reverse Recovery Time trr (ns)
1000
di / dt = 50 A /
μs
V
GS
= 0, Ta = 25°C
1000
Switching Characteristics
Switching Time t (μs)
100
tr
tf
td(off)
100
10
td(on)
10
0.1
1
10
100
1
0.1
V
GS
= 10 V, V
DD
= 30 V
PW = 300
μs,
duty
≤
1%
1
10
100
Reverse Drain Current
I
DR
(A)
Drain Current
I
D
(A)
Reverse Drain Current vs.
Source to Drain Voltage
50
Typical Capacitance vs.
Drain to Source Voltage
10000
V
GS
= 0
f = 1 MHz
Reverse Drain Current I
DR
(A)
30
5V
20
Capacitance C (pF)
40
V
GS
= 0 V
Coss
1000
10
Pulse Test
0
0.4
0.8
1.2
1.6
2.0
100
0
10
20
30
40
50
60
Drain to Source Voltage V
DS
(V)
Source to Drain Voltage V
SD
(V)
R07DS0887EJ0200 Rev.2.00
Jan 29, 2014
Page 4 of 7
RJF0612JPE
Gate to Source Voltage vs.
Shutdown Time of Load-Short Test
Shutdown Case Temperature Tc (°C)
V
GS
(V)
16
14
12
10
8
6
4
2
0
100
1000
10000
24 V
V
DD
= 16 V
200
Target Specifications
Shutdown Case Temperature vs.
Gate to Source Voltage
180
Gate to Source Voltage
160
140
120
100
0
I
D
= 5 A
2
4
6
8
10
Shutdown Time of Load-Short Test Pw (μs)
Gate to Source Voltage
V
GS
(V)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
0.1
0.05
0.02
θ
ch- c(t) =
γ
s (t)
• θ
ch- c
θ
ch- c = 1.25°C/W, Tc = 25°C
PDM
PW
T
D=
0.03
PW
T
0.01
ulse
p
ot
sh
1
0.01
10
μ
100
μ
1m
10 m
100 m
1
10
Pulse Width PW (S)
R07DS0887EJ0200 Rev.2.00
Jan 29, 2014
Page 5 of 7
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