SMD Type
P-Channel
MOSFET
FR9024N
(KFR9024N)
TO-252
MOSFET
Unit: mm
■
Features
●
V
DS (V)
=-55V
●
I
D
=-11 A (V
GS
=-10V)
+0.2
9.70
-0.2
+0.15
1.50
-0.15
+0.15
6.50
-0.15
+0.2
5.30
-0.2
+0.1
2.30
-0.1
+0.8
0.50
-0.7
4
+0.15
5.55
-0.15
●
Fast Switching
●
Fully Avalanche Rated
+0.1
0.80
-0.1
+0.15
0.50
-0.15
●
R
DS(ON)
＜
175mΩ (V
GS
=-10V)
0.127
max
+0.28
1.50
-0.1
+0.25
2.65
-0.1
2.3
4 .60
+0.15
-0.15
+
0.60
- 0.1
0.1
D
1 Gate
2 Drain
3 Source
4 Drain
G
S
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Avalanche Current
Power Dissipation
Single Pulse Avalanche Energy (Note.1)
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note.2)
Thermal Resistance.Junction- to-Ambient (PCB mount)
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Case
Junction Temperature
Junction Storage Temperature Range
Note.1: Starting T
J
= 25°C, L = 2.8mH, R
G
= 25Ω, I
AS
= -6.6A.
Note.2: I
SD
≤
-6.6A, di/dt
≤
240A/μs, V
DD
≤
V
(BR)DSS
, T
J
≤
150°C
Tc = 25°C
Tc = 25°C
Tc = 100°C
Symbol
V
DS
V
GS
I
D
I
DM
I
AR
P
D
E
AS
E
AR
dv/dt
R
thJA
R
thJC
T
J
T
stg
Rating
-55
±20
-11
-8
-44
-6.6
38
62
3.8
-10
50
110
3.3
150
-55 to 150
℃
℃/W
W
mJ
V/ns
A
Unit
V
3
.8
0
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1
SMD Type
P-Channel
MOSFET
FR9024N
(KFR9024N)
■
Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Internal Drain Inductance
Internal Source Inductance
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Maximum Body-Diode Continuous Current
Pulsed Source Current
Diode Forward Voltage
Note.1: Pulse width
≤
300μs; duty cycle
≤
2%.
Symbol
V
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(O
n
)
g
FS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
L
D
L
S
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
I
S
I
SM
V
SD
I
S
=-7.2 A,V
GS
=0V,T
J
= 25°C, (Note.1)
I
F
=-7.2A,d
I
/d
t
=100A/us ,T
J
= 25°C,
V
DS
=-28V, I
D
=-7.2A,R
G
=24Ω,R
D
=3.7Ω
(Note.1)
Between lead,
6mm (0.25in.)
from package
and center of die contact
D
MOSFET
Test Conditions
I
D
=-250μA, V
GS
=0V
V
DS
=-55V, V
GS
=0V
V
DS
=-44V, V
GS
=0V, T
J
=150℃
V
DS
=0V, V
GS
=±20V
V
DS
=V
GS
I
D
=-250μA
V
GS
=-10V, I
D
=-6.6A
V
DS
=-25V, I
D
=-7.2A
V
GS
=0V, V
DS
=-25V, f=1MHz
Min
-55
Typ
Max
-25
-250
±100
Unit
V
uA
nA
V
mΩ
S
-2
2.5
350
170
92
-4
175
pF
19
V
GS
=-10V, V
DS
=-44V, I
D
=-7.2A (Note.1)
5.1
10
4.5
nC
G
S
nH
7.5
13
55
23
37
47
84
71
130
-11
-44
-1.6
nC
A
V
ns
2
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SMD Type
P-Channel
MOSFET
FR9024N
(KFR9024N)
■
Typical Characterisitics
100
TOP
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
MOSFET
100
TOP
-I D , Drain-to-Source Current (A)
10
BOTTOM
-I
D
, Drain-to-Source Current (A)
10
BOTTOM
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
1
-4.5V
1
-4.5V
0.1
0.1
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
-VDS , Drain-to-Source Voltage (V)
0.1
0.1
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
100
Fig 1.
Typical Output Characteristics
100
Fig 2.
Typical Output Characteristics
2.5
-V
DS
, Drain-to-Source Voltage (V)
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= -11A
-I
D
, Drain-to-Source Current (A)
2.0
10
T
J
= 25
°
C
T
J
= 150
°
C
1.5
1.0
1
0.5
0.1
V DS = -25V
20µs PULSE WIDTH
4
5
6
7
8
9
10
0.0
-60 -40 -20
V
GS
= -10V
0
20
40
60
80
100 120 140 160
-V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature(
°
C)
Fig 3.
Typical Transfer Characteristics
700
600
500
400
300
200
100
0
Fig 4.
Normalized On-Resistance
Vs. Temperature
20
C
is s
C
os s
-V
G S
, G a te -to -S ourc e V oltage (V )
V
GS
C
is s
C
rs s
C
os s
=
=
=
=
0V ,
f = 1MH z
C
gs
+ C
g d
, C
ds
S H OR TE D
C
gd
C
ds
+ C
gd
I
D
= -7 .2A
V
DS
= -44 V
V
DS
= -28 V
16
C , C a pac itanc e (pF )
12
8
C
rs s
4
1
10
100
A
0
FOR TE S T C IR C U IT
S E E FIG U R E 1 3
0
5
10
15
20
25
A
V
D S
, Drai n-to -So urc e V oltag e (V)
Q
G
, To tal G ate C ha rg e (n C)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
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3
SMD Type
P-Channel
MOSFET
FR9024N
(KFR9024N)
■
Typical Characterisitics
100
1000
MOSFET
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
T = 150
°
C
J
T = 25
°
C
J
100
-I
SD
, Reverse Drain Current (A)
-I
D
, Drain Current (A)
I
10
10us
10
100us
1ms
1
1
10ms
0.1
0.2
V
GS
= 0 V
0.6
0.9
1.3
1.6
0.1
T
C
= 25 °C
T
J
= 150 °C
Single Pulse
1
10
100
-V
SD
,Source-to-Drain Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
12.0
Fig 8.
Maximum Safe Operating Area
V
DS
V
GS
R
D
-I
D
, Drain Current (A)
-10V
Pulse Width
≤
1
µs
Duty Factor
≤
0.1 %
6.0
Fig 10a.
Switching Time Test Circuit
t
d(on)
t
r
t
d(off)
t
f
3.0
V
GS
10%
0.0
25
50
75
100
T
C
, Case Temperature
( ° C)
.
125
150
90%
V
DS
Fig 9.
Maximum Drain Current Vs.
Case Temperature
10
Fig 10b.
Switching Time Waveforms
Thermal Response (Z
thJC
)
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
0.001
0.01
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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+
-
9.0
R
G
D.U.T.
V
DD
0.1
SMD Type
P-Channel
MOSFET
FR9024N
(KFR9024N)
■
Typical Characterisitics
VDS
L
MOSFET
120
D .U .T
IA S
tp
0 .0 1
Ω
R
G
E
AS
, Single Pulse Avalanche Energy (mJ)
- V
V
DD
+
DD
D R IV E R
A
100
- 20V
ID
TOP
-3.0A
-4.2A
BOTTOM -6.6A
80
60
15V
Fig 12a.
Unclamped Inductive Test Circuit
I
AS
40
20
0
25
50
75
100
125
Starting T
J
, Junction Temperature
(
°
C)
150
tp
V
(BR)DSS
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
Fig 12b.
Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
V
G
Charge
V
GS
-3mA
Current Sampling Resistors
I
G
I
D
Fig 13a.
Basic Gate Charge Waveform
Fig 13b.
Gate Charge Test Circuit
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+
Q
GS
Q
GD
D.U.T.
-
-10V
Q
G
50KΩ
12V
.2µF
.3µF
V
DS
5
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