SMD Type
P-Channel Enhancement
MOSFET
SI2309DS
(KI2309DS)
■
Features
●
V
DS (V)
=-60V
●
I
D
=-1.25 A (V
GS
=-10V)
1.3
+0.1
2.4
-0.1
MOSFET
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
●
R
DS(ON)
＜
340mΩ (V
GS
=-10V)
●
R
DS(ON)
＜
550mΩ (V
GS
=-4.5V)
+0.1
-0.1
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
-0.1
G
1
3
D
+0.1
0.38
-0.1
1.Gate
2.Source
0-0.1
S
2
3.Drain
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current *1,*2
Pulsed Drain Current
Avalanche Current
Power Dissipation *1,*2
L=0.1mH
Ta = 25℃
Ta = 70℃
Thermal Resistance.Junction- to-Ambient t
≤5
sec
Steady State *1
Thermal Resistance.Junction- to-Case *1
Junction Temperature
Storage Temperature Range
*1 Surface Mounted on FR4 Board.
*2 t
≤
5 sec.
Ta = 25℃
Ta = 70℃
Symbol
V
DS
V
GS
I
D
I
DM
I
AS
P
D
R
thJA
R
thJC
T
J
T
stg
Rating
-60
±20
-1.25
-0.85
-8
-5
1.25
0.8
100
166
60
150
-55 to 150
℃
℃/W
W
A
Unit
V
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1
SMD Type
P-Channel Enhancement
MOSFET
SI2309DS
(KI2309DS)
■
Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance *1
On state drain current *1
Forward Transconductance *1
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Maximum Body-Diode Continuous Current
Diode Forward Voltage
Symbol
V
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(O
n
)
I
D(ON)
g
FS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
S
V
SD
I
S
=-1.25A,V
GS
=0V
V
GS
=-4.5V, V
DS
=-30V, R
L
=30Ω,R
GEN
=6Ω
I
D
=-1A
I
F
=-1.25A, d
I
/d
t
=100A/μs
V
GS
=-10V, V
DS
=-30V, I
D
=-1.25A
Test Conditions
I
D
=-250μA, V
GS
=0V
V
DS
=-48V, V
GS
=0V
V
DS
=-48V, V
GS
=0V, T
J
=125℃
V
DS
=0V, V
GS
=±20V
V
DS
=V
GS
I
D
=-250μA
V
GS
=-10V, I
D
=-1.25A
V
GS
=-4.5V, I
D
=-1A
V
GS
=-4.5V, V
DS
=-10V
V
DS
=-4.5V, I
D
=-1A
-6
-1
Min
-60
MOSFET
Typ
Max
-1
-50
±100
-3
Unit
V
μA
nA
V
mΩ
A
275
406
1.9
5.4
1.15
0.92
10.5
11.5
15.5
7.5
30
-0.82
340
550
S
12
nC
20
20
30
15
55
-1.25
-1.2
A
V
ns
*1 Pulse test; pulse width
≤
300us, duty cycle
≤
2%.
■
Marking
Marking
A9*
2
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SMD Type
P-Channel Enhancement
MOSFET
SI2309DS
(KI2309DS)
■
Typical Characterisitics
8
MOSFET
Output Characteristics
V
GS
= 10 thru 6 V
6
5
I
D
- Drain Current (A)
4
3
Transfer Characteristics
T
C
= -55 C
25 C
6
I
D
- Drain Current (A)
5V
4
4V
2
1, 2 V
0
0
2
4
6
8
10
V
DS
- Drain-to-Source Voltage (V)
1.5
3V
125 C
2
1
0
0
1
2
3
4
5
V
GS
- Gate-to-Source Voltage (V)
500
On-Resistance vs. Drain Current
Capacitance
1.2
C - Capacitance (pF)
400
C
iss
300
r
DS(on)
- On-Resistance (
)
0.9
V
GS
= 4.5 V
V
GS
= 10 V
0.3
0.6
200
C
oss
C
rss
100
0.0
0
2
4
I
D
- Drain Current (A)
6
8
0
0
6
12
18
24
30
V
DS
- Drain-to-Source Voltage (V)
10
V
GS
- Gate-to-Source Voltage (V)
V
DS
= 30 V
I
D
= 1.25 A
Gate Charge
2.0
1.8
r
DS(on)
- On-Resistance ( )
(Normalized)
1.6
1.4
1.2
1.0
0.8
0.6
-50
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 1.25 A
8
6
4
2
0
0
1
2
3
4
5
6
Q
g
- Total Gate Charge (nC)
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature ( C)
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3
SMD Type
P-Channel Enhancement
MOSFET
SI2309DS
(KI2309DS)
■
Typical Characterisitics
10
MOSFET
Source-Drain Diode Forward Voltage
1.0
On-Resistance vs. Gate-to-Source Voltage
0.8
I
S
- Source Current (A)
r
DS(on)
- On-Resistance (
)
T
J
= 150 C
1
T
J
= 25 C
0.6
I
D
= 1.25 A
0.4
0.2
0.1
0.00
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
0.0
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
0.6
Threshold Voltage
12
I
D
= 250 A
10
Single Pulse Power
0.4
V
GS(th)
Variance (V)
8
Power (W)
0.2
6
T
A
= 25 C
4
-0.2
.
0.0
2
-0.4
-50
-25
0
25
50
75
100
125
150
0
0.01
0.1
1
Time (sec)
10
100
500
T
J
- Temperature ( C)
100
Safe Operating Area, Junction-to-Ambient
10
I
D
- Drain Current (A)
10 s
Limited
by r
DS(on)
100 s
1
1 ms
0.1
TA = 25 C
Single Pulse
10 ms
100 ms
dc, 100 s, 10 s, 1 s
1
10
100
V
DS
- Drain-to-Source Voltage (V)
0.01
0.1
4
www.kexin.com.cn
SMD Type
P-Channel Enhancement
MOSFET
SI2309DS
(KI2309DS)
■
Typical Characterisitics
2
1
Normalized Effective Transient
Thermal Impedance
MOSFET
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
t
1
0.1
0.05
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 130 C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t
1
t
2
Single Pulse
0.01
10
- 4
10
- 3
10
- 2
10
- 1
1
10
100
500
Square Wave Pulse Duration (sec)
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