SMD Type
P-Channel
MOSFET
SI2333DS
(KI2333DS)
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
MOSFET
Unit: mm
■
Features
+0.1
2.4
-0.1
●
V
DS (V)
=-12V
●
I
D
=-5.3 A (V
GS
=-4.5V)
●
R
DS(ON)
＜
32mΩ (V
GS
=-4.5V)
●
R
DS(ON)
＜
42mΩ (V
GS
=-2.5V)
●
R
DS(ON)
＜
59mΩ (V
GS
=-1.8V)
+0.1
1.3
-0.1
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
-0.1
1. Gate
2. Source
3. Drain
G
1
3
D
S
2
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
TA = 25 °C
TA = 70 °C
TA = 25 °C
TA = 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
R
thJF
T
J
T
stg
1.25
0.8
100
-
150
-55 to 150
-5.3
-4.2
-20
0.75
0.48
166
50
W
5s
Steady State
-12
±8
-4.1
-3.3
A
Unit
V
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Foot
Junction Temperature
Junction Storage Temperature Range
+0.1
0.38
-0.1
0-0.1
℃/W
℃
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1
SMD Type
P-Channel
MOSFET
SI2333DS
(KI2333DS)
■
Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note.1)
On state drain current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Maximum Body-Diode Continuous Current
Diode Forward Voltage
(Note.1)
(Note.1)
Symbol
V
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(O
n
)
I
D(ON)
g
FS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
V
SD
I
S
=-1A,V
GS
=0V
V
GS
=-4.5V, V
DS
=-6V, R
L
=6Ω,
R
G
=6Ω,I
D
=-1A
V
GS
=-4.5V, V
DS
=-6V, I
D
=-5.3A
V
GS
=0V, V
DS
=-6V, f=1MHz
Test Conditions
I
D
=-250μA, V
GS
=0V
V
DS
=-9.6V, V
GS
=0V
V
DS
=-9.6V, V
GS
=0V, T
J
=55℃
V
DS
=0V, V
GS
=±8V
V
DS
=V
GS
I
D
=-250μA
V
GS
=-4.5V, I
D
=-5.3A
V
GS
=-2.5V, I
D
=-4.6A
V
GS
=-1.8V, I
D
=-2A
V
GS
=-5V, V
DS
=-4.5V
V
DS
=-5V, I
D
=-5.3A
-20
-0.4
Min
-12
MOSFET
Typ
Max
-1
-10
±100
-1
32
42
59
Unit
V
uA
nA
V
mΩ
A
17
1100
390
300
11.5
1.5
3.2
25
45
72
60
40
70
110
90
-1
-1.2
18
S
pF
nC
ns
A
V
Note.1:Pulse test: PW
≤
300
μs,
duty cycle
≤
2 %.
■
Marking
Marking
E3*
2
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SMD Type
P-Channel
MOSFET
SI2333DS
(KI2333DS)
■
Typical Characterisitics
20
V
GS
= 5 V thru 2.5 V
16
I
D
-
Drain Current (A)
I
D
- Drain Current (A)
2 V
16
20
MOSFET
T
C
= - 55 °C
25 °C
125 °C
12
12
8
1.5 V
8
4
1 V
0
0
1
2
3
4
5
V
DS
-
Drain-to-Source Voltage (V)
4
0
0.0
0.5
1.0
1.5
2.0
2.5
Output Characteristics
0.15
1800
V
GS
- Gate-to-Source Voltage (V)
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
0.12
C - Capacitance (pF)
1500
1200
0.09
C
iss
900
0.06
V
GS
= 1.8 V
V
GS
= 2.5 V
600
C
rss
C
oss
0.03
V
GS
= 4.5 V
0.00
0
4
8
12
16
20
I
D
-
Drain Current (A)
300
0
0
3
6
9
12
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
5
V
DS
= 6 V
I
D
= 5.3 A
R
DS(on)
-
On-Resistance
(Normalized)
1.4
V
GS
= 4.5 V
I
D
= 5.3 A
Capacitance
V
GS
- Gate-to-Source Voltage (V)
4
1.3
1.2
3
1.1
2
1.0
1
0.9
0
0
3
6
9
12
15
Q
g
-
Total Gate Charge (nC)
0.8
- 50
- 25
0
25
50
75
100
125
150
Gate Charge
T
J
- Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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SMD Type
P-Channel
MOSFET
SI2333DS
(KI2333DS)
■
Typical Characterisitics
20
10
0.15
MOSFET
T
J
= 150 °C
1
R
DS(on)
- On-Resistance (Ω)
0.12
I
S
- Source Current (A)
T
J
= 25 °C
0.09
I
D
= 2 A
I
D
= 5.3 A
0.06
0.03
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.00
0
1
2
3
4
5
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
0.4
0.3
V
GS(th)
Variance (V)
0.2
Power (W)
0.1
0.0
- 0.1
- 0.2
- 50
I
D
= 140 µA
12
10
On-Resistance vs. Gate-to-Source Voltage
8
6
4
T
A
= 25 °C
2
- 25
0
25
50
75
100
.
0
125
150
0.01
0.1
1
Time (s)
10
100
600
T
J
- Temperature (°C)
Threshold Voltage
100
Limited by R
DS(on)*
10
Single Pulse Power
I
DM
Limited
P(t) = 0.0001
P(t) = 0.001
1
I
D(on)
Limited
T
A
= 25 °C
Single Pulse
BVDSS Limited
P(t) = 0.01
P(t) = 0.1
0.1
P(t) = 1
P(t) = 10
DC
I
D
- Drain Current (A)
0.01
0.1
1
10
100
V
DS
-
Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area
4
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SMD Type
P-Channel
MOSFET
SI2333DS
(KI2333DS)
■
Typical Characterisitics
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
MOSFET
0.2
0.1
0.1
0.05
0.02
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
2. Per Unit Base = R
thJA
= 120 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
Single Pulse
0.01
10
- 4
10
- 3
10
- 2
10
- 1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
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