SMD Type
P-Channel
MOSFET
SI2315BDS-HF
(KI2315BDS-HF)
SOT-23
MOSFET
Unit: mm
+0.1
2.9
-0.1
+0.1
0.4
-0.1
■
Features
●
V
DS (V)
=-12V
+0.1
2.4
-0.1
●
R
DS(ON)
＜
50mΩ (V
GS
=-4.5V)
●
R
DS(ON)
＜
65mΩ (V
GS
=-2.5V)
●
R
DS(ON)
＜
100mΩ (V
GS
=-1.8V)
●
Pb−Free Package May be Available. The G−Suffix Denotes a
+0.1
1.3
-0.1
●
I
D
=-3.85A (V
GS
=-4.5V)
1
2
0.95
+0.1
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
+0.1
-0.1
1.9
0.97
Pb−Free Lead Finish
+0.1
0.38
-0.1
+0.1
-0.1
1.Gate
2.Source
0-0.1
3.Drain
G
1
3
D
S
2
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current *1 Ta = 25℃
Ta = 70℃
Pulsed Drain Current *1
Power Dissipation
*1
Ta = 25℃
Ta = 70℃
Thermal Resistance.Junction- to-Ambient t≤5 sec
Steady State
Thermal Resistance.Junction- to-Foot
Junction Temperature
Storage Temperature Range
*1Surface Mounted on FR4 board.
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
*1
R
thJF
T
J
T
stg
1.19
0.76
105
166
75
150
-55 to 150
℃
℃/W
-3.85
-3.0
-12
0.75
0.48
W
5 sec
-12
±8
-3.0
-2.45
A
Steady State
Unit
V
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1
SMD Type
P-Channel
MOSFET
SI2315BDS-HF
(KI2315BDS-HF)
■
Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Symbol
V
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(O
n
)
Test Conditions
I
D
=-250μA, V
GS
=0V
V
DS
=-12V, V
GS
=0V
V
DS
=-12V, V
GS
=0V, T
J
=55℃
V
DS
=0V, V
GS
=±8V
V
DS
=V
GS
I
D
=-250μA
V
GS
=-4.5V, I
D
=-3.85A
V
GS
=-2.5V, I
D
=-3.4A
V
GS
=-1.8V, I
D
=-2.7A
On state drain current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Maximum Body-Diode Continuous Current
Diode Forward Voltage
I
D(ON)
g
FS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
V
SD
I
S
=-1.6A,V
GS
=0V
V
GS
=-4.5V, V
DS
=-6V, R
L
=6Ω,R
GEN
=6Ω
I
D
=1.0A *1
V
GS
=-4.5V, V
DS
=-6V, I
D
=-3.85A *1
V
GS
=0V, V
DS
=-6V, f=1MHz *1
V
GS
=-4.5V, V
DS
=-5V
V
GS
=-2.5V, V
DS
=-5V
V
DS
=-5V, I
D
=-3.85A
-6
-3
-0.45
Min
-12
MOSFET
Typ
Max
-1
-10
±100
-0.9
50
65
100
Unit
V
μA
nA
V
mΩ
A
7
715
275
200
8
1.1
2.3
15
35
50
50
20
50
70
75
-1.6
-1.2
A
V
ns
15
nC
pF
S
*1 Pulse test: PW
≤
300
μs
duty cycle
≤
2 %.
■
Marking
Marking
M5*
F
2
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SMD Type
P-Channel
MOSFET
SI2315BDS-HF
(KI2315BDS-HF)
■
Typical Characterisitics
12
12
MOSFET
10
V
GS
= 4.5 thru 2 V
I
D
- Drain Current (A)
10
I
D
- Drain Current (A)
8
8
6
1.5 V
6
4
4
T
C
= 125 °C
2
25 °C
- 55 °C
2
0
0
1
V
DS
2
3
4
5
6
0
0.0
0.5
V
GS
1.0
1.5
2.0
2.5
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
Output Characteristics
0.30
1200
Transfer Characteristics
R
DS(on)
- On-Resistance (
Ω)
0.25
C - Capacitance (pF)
1000
C
iss
0.20
800
0.15
V
GS
= 1.8 V
V
GS
= 2.5 V
0.05
V
GS
= 4.5 V
0.00
0
2
4
6
8
10
12
600
0.10
400
C
rss
C
oss
200
0
0
2
V
DS
4
6
8
10
12
I - Drain Current (A)
D
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
5
V
GS
- Gate-to-Source Voltage (V)
V
DS
= 6 V
I
D
= 3.5 A
1.6
V
GS
= 4.5 V
I
D
= 3.5 A
Capacitance
4
R
DS(on)
- On-Resistance
(Ω)
(Normalized)
4
6
8
10
1.4
3
1.2
2
1.0
1
0.8
0
0
2
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
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SMD Type
P-Channel
MOSFET
SI2315BDS-HF
(KI2315BDS-HF)
■
Typical Characterisitics
20
0.4
MOSFET
I
S
- Source Current (A)
10
R
DS(on)
- On-Resistance (Ω)
0.3
T
J
= 150 °C
0.2
T
J
= 25 °C
I
D
= 3.5 A
0.1
1
0.0
0.2
V
SD
0.4
0.6
0.8
1.0
1.2
0.0
0
1
2
3
4
5
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
0.6
I
D
= 250
µA
12
10
On-Resistance vs. Gate-to-Source Voltage
0.4
V
GS(th)
Variance (V)
0.2
Power (W)
8
0.0
6
- 0.2
4
T
A
= 25 °C
2
.
- 0.4
- 0.6
- 50
0
- 25
0
25
50
75
100
125
150
0.01
0.1
1
10
Time (s)
100
600
T
J
- Temperature (°C)
Threshold Voltage
100
Limited
by R
DS(on)*
Single Pulse Power
I
D
- Drain Current (A)
10
1 ms, 100
µs
10 ms
100 ms
1
1 s
10 s
DC, 100 s
0.1
T
A
= 25 °C
Single Pulse
0.01
0.1
* V
GS
1
10
100
V
DS
- Drain-to-Source Voltage (V)
minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area
4
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SMD Type
P-Channel
MOSFET
SI2315BDS-HF
(KI2315BDS-HF)
■
Typical Characterisitics
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
MOSFET
0.2
0.1
0.1
0.05
0.02
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
2. Per Unit Base = R
thJA
= 130 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
0.01
10
-4
Single Pulse
10
-3
10
-2
10
-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
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