Preliminary
Datasheet
RJH60D5DPM
600V - 37A - IGBT
Application: Inverter
Features
Short circuit withstand time (5
s
typ.)
Low collector to emitter saturation voltage
V
CE(sat)
= 1.6 V typ. (at I
C
= 37 A, V
GE
= 15 V, Ta = 25°C)
Built in fast recovery diode (100 ns typ.) in one package
Trench gate and thin wafer technology
High speed switching
t
f
= 40 ns typ. (at V
CC
= 300 V, V
GE
= 15 V, I
C
= 37 A, Rg = 5
,
Ta = 25°C, inductive load)
R07DS0174EJ0200
Rev.2.00
Apr 19, 2012
Outline
RENESAS Package code: PRSS0003ZA-A
(Package name: TO-3PFM)
C
G
1. Gate
2. Collector
3. Emitter
E
1
2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal resistance (IGBT)
Junction to case thermal resistance (Diode)
Junction temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at Tc = 25C
Symbol
V
CES
/ V
R
V
GES
I
C
I
C
ic(peak)
I
DF
i
DF
(peak)
Note1
P
C Note2
j-c
Note2
j-cd
Note2
Tj
Tstg
Note1
Ratings
600
±30
75
37
150
30
120
45
2.78
3.95
150
–55 to +150
Unit
V
V
A
A
A
A
A
W
°C/ W
°C/ W
°C
°C
R07DS0174EJ0200 Rev.2.00
Apr 19, 2012
Page 1 of 9
RJH60D5DPM
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Collector to emitter breakdown
voltage
Zero gate voltage collector current
/ Diode reverse current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reveres transfer capacitance
Total gate charge
Gate to emitter charge
Gate to collector charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Short circuit withstand time
FRD forward voltage
FRD reverse recovery time
FRD reverse recovery charge
FRD peak reverse recovery current
Notes: 3. Pulse test.
Symbol
V
BR(CES)
I
CES
/ I
R
I
GES
V
GE(off)
V
CE(sat)
V
CE(sat)
Cies
Coes
Cres
Qg
Qge
Qgc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
sc
V
F
t
rr
Q
rr
I
rr
Min
600
—
—
4.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3.0
—
—
—
—
Typ
—
—
—
—
1.6
2.0
1900
120
50
78
12
32
50
40
135
40
0.65
0.27
0.92
5.0
1.4
100
0.18
4.2
Max
—
5
±1
6.0
2.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1.9
—
—
—
Unit
V
A
A
V
V
V
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
mJ
s
V
ns
C
A
Test Conditions
I
C
=10
A,
V
GE
= 0
V
CE
= 600 V, V
GE
= 0
V
GE
= ±30 V, V
CE
= 0
V
CE
= 10 V, I
C
= 1 mA
I
C
= 37 A, V
GE
= 15 V
Note3
I
C
=75 A, V
GE
= 15 V
Note3
V
CE
= 25 V
V
GE
= 0
f = 1 MHz
V
GE
= 15 V
V
CE
= 300 V
I
C
= 37 A
V
CC
= 300 V
V
GE
= 15 V
I
C
= 37 A
Rg = 5
Inductive load
V
CC
360 V, V
GE
= 15 V
I
F
= 30 A
Note3
I
F
= 30 A
di
F
/dt = 100 A/s
R07DS0174EJ0200 Rev.2.00
Apr 19, 2012
Page 2 of 9
RJH60D5DPM
Preliminary
Main Characteristics
Collector Dissipation vs.
Case Temperature
50
100
Maximum DC Collector Current vs.
Case Temperature
Collector Dissipation Pc (W)
40
Collector Current I
C
(A)
0
25
50
75
100 125 150 175
80
30
60
20
40
10
20
0
0
0
25
50
75
100 125 150 175
Case Temperature Tc (°C)
Case Temperature Tc (°C)
Maximum Safe Operation Area
1000
200
Turn-off SOA
Collector Current I
C
(A)
100
PW
Collector Current I
C
(A)
1000
10
10
=
0
μ
10
150
s
μ
s
100
1
Tc = 25°C
Single pulse
50
0.1
1
0
10
100
0
200
400
600
800
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
Typical Output Characteristics
150
150
Ta = 25
°
C
Pulse Test
15 V
100
18 V
75
50
25
0
0
1
2
3
4
5
V
GE
= 8 V
Typical Output Characteristics
Ta = 150
°
C
Pulse Test
15 V
100
18 V
75
50
V
GE
= 8 V
25
0
0
1
2
3
4
5
10 V
12 V
12 V
Collector Current I
C
(A)
10 V
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(A)
125
125
Collector to Emitter Voltage V
CE
(V)
R07DS0174EJ0200 Rev.2.00
Apr 19, 2012
Page 3 of 9
RJH60D5DPM
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
5
Tc = 25
°
C
Pulse Test
4
I
C
= 37 A
75 A
3
Preliminary
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
5
Tc = 150
°
C
Pulse Test
I
C
= 37 A
75 A
3
Collector to Emitter Satularion Voltage
V
CE(sat)
(V)
Collector to Emitter Satularion Voltage
V
CE(sat)
(V)
4
2
2
1
4
8
12
16
20
1
4
8
12
16
20
Gate to Emitter Voltage V
GE
(V)
Gate to Emitter Voltage V
GE
(V)
Collector to Emitter Saturation Voltage
vs. Case Temparature (Typical)
Transfer Characteristics (Typical)
150
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
2.8
V
GE
= 15 V
Pulse Test
2.4
I
C
= 75 A
Collector Current I
C
(A)
125
Tc = 25
°
C
100
75
50
25
0
150
°
C
2.0
37 A
1.6
18.5 A
V
CE
= 10 V
Pulse Test
4
8
12
16
20
0
1.2
−25
0
25
50
75
100 125 150
Gate to Emitter Voltage V
GE
(V)
Gate to Emitter Cutoff Voltage
vs. Case Temparature (Typical)
10
12
Case Temparature Tc (
°
C)
Gate to Emitter Cutoff Voltage V
GE(off)
(V)
Frequency Characteristics (Typical)
Collector Current I
C(RSM)
(A)
8
I
C
= 10 mA
6
10
0
8
6
4
Collector current wave
(Square wave)
4
1 mA
2
V
CE
= 10 V
Pulse Test
0
−25
0
25
50
75
100 125 150
2 Tj = 125°C, Tc = 90°C
V
CE
= 400 V, V
GE
= 15 V
Rg = 5
Ω,
duty = 50%
0
1
10
100
1000
Case Temparature Tc (
°
C)
Frequency f (kHz)
R07DS0174EJ0200 Rev.2.00
Apr 19, 2012
Page 4 of 9
RJH60D5DPM
Switching Characteristics (Typical) (1)
Swithing Energy Losses E (mJ)
1000
Preliminary
Switching Characteristics (Typical) (2)
100
V
CC
= 300 V, V
GE
= 15 V
Rg = 5
Ω,
Tc = 150
°
C
10
Switching Times t (ns)
100
tf
td(off)
td(on)
1
10
tr
V
CC
= 300 V, V
GE
= 15 V
Rg = 5
Ω,
Tc = 150
°
C
1
10
100
0.1
Eoff
Eon
0.01
1
10
100
1
Collector Current I
C
(A)
(Inductive load)
Switching Characteristics (Typical) (3)
1000
Collector Current I
C
(A)
(Inductive load)
Switching Characteristics (Typical) (4)
10
Swithing Energy Losses E (mJ)
Switching Times t (ns)
V
CC
= 300 V, V
GE
= 15 V
I
C
= 37 A, Tc = 150
°
C
td(off)
100
td(on)
tf
1
Eon
Eoff
tr
V
CC
= 300 V, V
GE
= 15 V
I
C
= 37 A, Tc = 25
°
C
1
10
100
10
0.1
1
10
100
Gate Registance Rg (Ω)
(Inductive load)
Gate Registance Rg (Ω)
(Inductive load)
Switching Characteristics (Typical) (6)
Swithing Energy Losses E (mJ)
10
V
CC
= 300 V, V
GE
= 15 V
I
C
= 37 A, Rg = 5
Ω
Switching Characteristics (Typical) (5)
1000
V
CC
= 300 V, V
GE
= 15 V
I
C
= 37 A, Rg = 5
Ω
Switching Times t (ns)
td(off)
100
td(on)
tr
tf
1
Eon
Eoff
10
25
50
75
100
125
150
0.1
25
50
75
100
125
150
Case Temperature Tc (°C)
(Inductive load)
Case Temperature Tc (°C)
(Inductive load)
R07DS0174EJ0200 Rev.2.00
Apr 19, 2012
Page 5 of 9
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
