IRLR2908
IRLU2908
D-Pak
IRLR2908
I-Pak
IRLU2908
Features
l
l
l
l
l
l
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Description
The D-Pak is designed for surface mounting
using vapor phase, infrared, or wavesolde
ring techniques. The straight lead version
(IRFU series) is for through-hole mounting
applications. Power dissipation levels up to
1.5 watts are possible in typical surface mount
applications.
D
V
DSS
= 80V
G
S
R
DS(on)
= 28mΩ
I
D
= 30A
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
E
AS
(tested)
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (See Fig. 9)
Continuous Drain Current, V
GS
@ 10V
(Package Limited)
Pulsed Drain Current
Max.
39
28
30
150
120
0.77
± 16
180
250
See Fig.12a,12b,15,16
2.3
-55 to + 175
Units
A
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
W
W/°C
V
mJ
A
mJ
V/ns
°C
h
Peak Diode Recovery dv/dt
e
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Avalanche Current
i
d
300 (1.6mm from case )
Thermal Resistance
Parameter
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
Typ.
Max.
1.3
40
110
Units
°C/W
jÃ
–––
–––
–––
2014-8-25
1
www.kersemi.com
IRLR2908/IRLU2908
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min. Typ. Max. Units
80
–––
–––
–––
1.0
35
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.085
22.5
25
–––
–––
–––
–––
–––
–––
22
6.0
11
12
95
36
55
4.5
7.5
1890
260
35
1920
170
310
–––
–––
28
30
2.5
–––
20
250
200
-200
33
9.1
17
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
nH
ns
nC
nA
V
S
µA
V
mΩ
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 10V, I
D
= 23A
V
GS
= 4.5V, I
D
V/°C Reference to 25°C, I
D
= 1mA
f
= 20A
f
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 25V, I
D
= 23A
V
DS
= 80V, V
GS
= 0V
V
DS
= 80V, V
GS
= 0V, T
J
= 125°C
V
GS
= 16V
V
GS
= -16V
I
D
= 23A
V
DS
= 64V
V
GS
= 4.5V
V
DD
= 40V
I
D
= 23A
R
G
= 8.3Ω
V
GS
= 4.5V
f
D
G
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz, See Fig. 5
S
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 64V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 64V
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
75
210
39
A
150
1.3
110
310
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
Ã
p-n junction diode.
T
J
= 25°C, I
S
= 23A, V
GS
= 0V
T
J
= 25°C, I
F
= 23A, V
DD
= 25V
di/dt = 100A/µs
f
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2014-8-25
2
www.kersemi.com
IRLR2908/IRLU2908
1000
TOP
VGS
15V
10V
4.5V
4.0V
3.5V
3.0V
2.7V
2.5V
1000
TOP
VGS
15V
10V
4.5V
4.0V
3.5V
3.0V
2.7V
2.5V
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
100
BOTTOM
10
BOTTOM
2.5V
1
10
2.5V
1
0.1
20µs PULSE WIDTH
Tj = 25°C
0.01
0.01
0.1
1
10
100
0.1
0.01
0.1
20µs PULSE WIDTH
Tj = 175°C
1
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
60
ID, Drain-to-Source Current
(Α
)
G FS , Forward Transconductance (S)
TJ = 25°C
50
100
40
T J = 175°C
T J = 175°C
T J = 25°C
30
10
20
VDS = 25V
20µs PULSE WIDTH
1
2
3
4
5
10
VDS = 10V
20µs PULSE WIDTH
0
0
10
20
30
40
50
60
VGS , Gate-to-Source Voltage (V)
ID, Drain-to-Source Current (A)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Forward Transconductance
vs. Drain Current
2014-8-25
3
www.kersemi.com
IRLR2908/IRLU2908
100000
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
5.0
ID= 23A
VGS , Gate-to-Source Voltage (V)
4.0
VDS= 64V
VDS= 40V
VDS= 16V
10000
C, Capacitance(pF)
Ciss
1000
3.0
Coss
100
2.0
Crss
1.0
10
1
10
100
0.0
0
5
10
15
20
25
VDS, Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000.00
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100.00
T J = 175°C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
100µsec
10
1msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
10msec
10.00
1.00
T J = 25°C
VGS = 0V
0.10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VSD, Source-to-Drain Voltage (V)
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
2014-8-25
4
www.kersemi.com
IRLR2908/IRLU2908
40
35
30
ID, Drain Current (A)
RDS(on) , Drain-to-Source On Resistance
3.0
ID = 38A
2.5
VGS = 4.5V
25
20
15
10
5
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
2.0
(Normalized)
1.5
1.0
0.5
0.0
-60 -40 -20 0
20 40 60 80 100 120 140 160 180
T J , Junction Temperature (°C)
Fig 9.
Maximum Drain Current vs.
Case Temperature
Fig 10.
Normalized On-Resistance
vs. Temperature
10
Thermal Response ( Z thJC )
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
P
DM
t
1
0.01
SINGLE PULSE
( THERMAL RESPONSE )
t
2
Notes:
1. Duty factor D =
2. Peak T
t
1
/ t
2
+T
C
J
= P
DM
x Z
thJC
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
2014-8-25
5
www.kersemi.com
单片机
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
