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BUX85

产品描述Bipolar Transistors - BJT 2A 450V 50W NPN
产品类别分立半导体    晶体管   
文件大小105KB,共5页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
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BUX85概述

Bipolar Transistors - BJT 2A 450V 50W NPN

BUX85规格参数

参数名称属性值
Brand NameON Semiconductor
是否无铅含铅
零件包装代码TO-220AB
包装说明CASE 221A-09, 3 PIN
针数3
制造商包装代码221A-09
Reach Compliance Codenot_compliant
ECCN代码EAR99
Factory Lead Time1 week
其他特性LEADFORM OPTIONS ARE AVAILABLE
外壳连接COLLECTOR
最大集电极电流 (IC)2 A
集电极-发射极最大电压450 V
配置SINGLE
最小直流电流增益 (hFE)30
JEDEC-95代码TO-220AB
JESD-30 代码R-PSFM-T3
JESD-609代码e0
元件数量1
端子数量3
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
峰值回流温度(摄氏度)235
极性/信道类型NPN
最大功率耗散 (Abs)40 W
认证状态Not Qualified
表面贴装NO
端子面层Tin/Lead (Sn/Pb)
端子形式THROUGH-HOLE
端子位置SINGLE
处于峰值回流温度下的最长时间30
晶体管应用SWITCHING
晶体管元件材料SILICON
标称过渡频率 (fT)4 MHz
Base Number Matches1

文档预览

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BUX85G
SWITCHMODE NPN Silicon
Power Transistors
The BUX85G is designed for high voltage, high speed power
switching applications like converters, inverters, switching regulators,
motor control systems.
Features
http://onsemi.com
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current
Collector Current
Base Current
Base Current
Continuous
Peak (Note 1)
Continuous
Peak (Note 1)
Symbol
V
CEO(sus)
V
CES
V
EBO
I
C
I
CM
I
B
I
BM
I
BM
P
D
T
J
, T
stg
Value
450
1000
5
2
3.0
0.75
1.0
1
50
400
−65
to +150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
Adc
Adc
W
W/_C
_C
2.0 AMPERES
POWER TRANSISTOR
NPN SILICON
450 VOLTS, 50 WATTS
COLLECTOR
2,4
1
BASE
3
EMITTER
4
Reverse Base Current
Peak
Total Device Dissipation @ T
C
= 25_C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds
Symbol
R
qJC
R
qJA
T
L
Max
2.5
62.5
275
Unit
_C/W
_C/W
_C
1
2
3
TO−220AB
CASE 221A−09
STYLE 1
MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle
x
10%.
BUX85G
AY WW
BUX85
A
Y
WW
G
= Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device
BUX85G
Package
TO−220
(Pb−Free)
Shipping
50 Units / Rail
©
Semiconductor Components Industries, LLC, 2013
November, 2013
Rev. 16
1
Publication Order Number:
BUX85/D

 
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