MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD01MUS2
4.4+/-0.1
1.6+/-0.1
LOT No.
φ
1
0.
RoHS Compliance,
DESCRIPTION
Silicon MOSFET Power Transistor 520MHz,1W
OUTLINE DRAWING
1.5+/-0.1
RD01MUS2 is a MOS FET type transistor specifically
designed for VHF/UHF RF amplifiers applications.
This device have an interal monolithic zener diode
from gate to source for ESD protection.
TYPE NAME
0.8 MIN 2.5+/-0.1
FEATURES
•High power gain:
Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz
•High Efficiency: 65%typ.
•Integrated gate protection diode
1
2
1.5+/-0.1
3
1.5+/-0.1
0.4 +0.03
-0.05
Terminal No.
1 : GATE
2 : SOURSE
3 : DRAIN
UNIT : mm
0.4+/-0.07 0.5+/-0.07 0.4+/-0.07
APPLICATION
For output stage of high power amplifiers in VHF/UHF
Band mobile radio sets.
0.1 MAX
RoHS COMPLIANT
RD01MUS2-101,T113 is a RoHS compliant products.
This product include the lead in high melting temperature type solders.
How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
(Tc=25
°C
UNLESS OTHERWISE NOTED)
SYMBOL
VDSS
VGSS
Pch
Pin
ID
Tch
Tstg
Rth j-c
PARAMETER
Drain to source voltage
Gate to source voltage
Channel dissipation
Input Power
Drain Current
Channel Temperature
Storage temperature
Thermal resistance
CONDITIONS RATINGS UNIT
Vgs=0V
30
V
Vds=0V
-5/+10
V
Tc=25
°C
3.6
W
Zg=Zl=50
Ω
60
mW
-
600
mA
°C
-
150
-
-40 to +125
°C
°C/W
Junction to case
34.5
D
G
S
SCHEMATIC DRAWING
Note 1: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS
(Tc=25
°C
, UNLESS OTHERWISE NOTED)
SYMBOL
I
DSS
I
GSS
Vth
Pout
ηd
PARAMETER
Zero gate voltage drain current
Gate to source leak current
Gate threshold Voltage
Output power
Drain efficiency
CONDITIONS
V
DS
=17V, V
GS
=0V
V
GS
=10V, V
DS
=0V
V
DS
=12V, I
DS
=1mA
V
DD
=7.2V, Pin=30mW
f=520MHz,Idq=100mA
MIN
-
-
1
0.8
50
LIMITS
TYP
-
-
1.8
1.4
65
UNIT
MAX
50
1
3
-
-
uA
uA
V
W
%
Note : Above parameters , ratings , limits and conditions are subject to change.
RD01MUS2
MITSUBISHI ELECTRIC
1/6
17 Jan. 2006
3.9+/-0.3
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD01MUS2
Vgs-Ids CHARACTERISTICS
1.2
1.0
0.8
Ta=+25°C
Vds=10V
RoHS Compliance,
TYPICAL CHARACTERISTICS
DRAIN DISSIPATION VS.
AMBIENT TEMPERATURE
*1:The material of the PCB
Glass epoxy (t=0.6 mm)
Silicon MOSFET Power Transistor 520MHz,1W
4
CHANNEL DISSIPATION
Pch(W)
3
Ids(A)
On PCB(*1) with Heat-sink
2
0.6
0.4
1
On PCB(*1)
0.2
0.0
0
40
80
120
160
200
AMBIENT TEMPERATURE Ta(°C)
0
1
2
3
Vgs(V)
4
5
0
Vds-Ids CHARACTERISTICS
2.5
Ta=+25°C
Vgs=10V
Vgs=9V
Vgs=8V
Vgs=7V
Vgs=6V
Vds VS. Ciss CHARACTERISTICS
20
18
16
14
12
10
8
6
4
2
0
0
Ta=+25°C
f=1MHz
2
1.5
Vgs=5V
1
0.5
0
0
2
4
6
Vds(V)
8
10
Vgs=4V
Vgs=3V
Ciss(pF)
Ids(A)
5
10
Vds(V)
15
20
Vds VS. Coss CHARACTERISTICS
20
18
16
14
12
10
8
6
4
2
0
0
4
Ta=+25°C
f=1MHz
Vds VS. Crss CHARACTERISTICS
Ta=+25°C
f=1MHz
3
Crss(pF)
Coss(pF)
2
1
0
5
10
Vds(V)
15
20
0
5
10
Vds(V)
15
20
RD01MUS2
MITSUBISHI ELECTRIC
2/6
17 Jan. 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD01MUS2
RoHS Compliance,
TYPICAL CHARACTERISTICS
Silicon MOSFET Power Transistor 520MHz,1W
Pin-Po CHARACTERISTICS
35
30
Po(dBm) , Gp(dB) ,
Idd(A)
25
20
15
10
5
0
-10
0
10
Pin(dBm)
20
η½
Ta=+25°C
f=520MHz
Vdd=7.2V
Idq=100mA
Gp
Po
Pin-Po CHARACTERISTICS
80
70
Pout(W) , Idd(A)
60
ηd(%)
50
40
30
20
10
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
100
Po
80
ηd(%)
17 Jan. 2006
ηd
60
40
20
0
Idd
Ta=25°C
f=520MHz
Vdd=7.2V
Idq=100mA
20
40
Pin(mW)
60
Vdd-Po CHARACTERISTICS
4.0
3.5
3.0
Po(W)
2.5
2.0
1.5
1.0
0.5
0.0
4
6
8
10
Vdd(V)
12
14
Ta=25°C
f=520MHz
Pin=30mW
Idq=100mA
Zg=ZI=50 ohm
Po
Vgs-Ids CHARACTORISTICS 2
0.8
0.7
0.6
Idd(A)
Ids(A),GM(S)
2
Vds=10V
Tc=-25~+75°C
-25°C
+25°C
Idd
0.5
0.4
0.3
0.2
0.1
0.0
1
+75°C
0
2
3
4
Vgs(V)
5
6
RD01MUS2
MITSUBISHI ELECTRIC
3/6
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD01MUS2
Vdd
RoHS Compliance,
TEST CIRCUIT(f=520MHz)
Vgg
Silicon MOSFET Power Transistor 520MHz,1W
C1
18m m
11m m
C2
10uF,50V
5m m
4.7kO HM
4m m
R F-IN
62pF
24pF
240pF
68O HM
3pF
30m m
13m m
RD01MUS2
RD 01MUS1
68pF
6.5m m
4m m 5.5m m
L1
3m m
17.5m m 25.5m m 4m m
RF-O UT
62pF
10pF
L1: Enam eled wire 5Turns,D:0.43m m ,2.46m m O .D
C 1,C2: 1000pF,0.022uF in parallel
Note:Board m aterial-glass epoxi substrate
Micro strip line width=1.0m m /50O HM,er:4.8,t=0.6m m
INPUT/OUTPUT IMPEDANCE VS. FREQUENCY CHARACTERISTICS
520MHz Zin* Zout*
Zo=50Ω
Vdd=7.2V, Idq=100mA(Vgg adj.),Pin=0.03W
520MHz Zin*
Zin* =3.11+j11.56
Zout*=11.64+j4.74
520MHz Zout*
Zin*: Complex conjugate of input impedance
Zout*: Complex conjugate of input impedance
RD01MUS2
MITSUBISHI ELECTRIC
4/6
17 Jan. 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD01MUS2
S12
S22
(ang)
36.0
21.1
15.3
10.8
3.0
-4.3
-7.8
-12.7
-17.1
-20.0
-21.0
-24.7
-25.0
-29.2
-31.4
-33.6
-35.2
-37.7
-37.8
-37.4
-37.8
-37.5
-34.9
(mag)
0.761
0.660
0.632
0.606
0.575
0.566
0.569
0.574
0.588
0.604
0.609
0.620
0.637
0.653
0.672
0.686
0.703
0.717
0.731
0.742
0.757
0.766
0.778
(ang)
-65.2
-85.2
-92.3
-98.0
-107.2
-114.1
-119.4
-123.7
-127.7
-131.0
-132.4
-134.3
-137.2
-139.7
-142.4
-144.6
-147.1
-149.3
-151.3
-153.6
-155.5
-157.6
-159.3
(mag)
0.046
0.052
0.054
0.054
0.054
0.053
0.053
0.051
0.048
0.047
0.046
0.045
0.041
0.040
0.038
0.035
0.033
0.030
0.027
0.025
0.022
0.020
0.017
RoHS Compliance,
Silicon MOSFET Power Transistor 520MHz,1W
RD01MSU2 S-PARAMETER DATA (@Vdd=7.2V, Id=100mA)
Freq.
[MHz]
100
150
175
200
250
300
350
400
450
500
520
550
600
650
700
750
800
850
900
950
1000
1050
1100
S11
(mag)
0.941
0.881
0.863
0.844
0.820
0.813
0.807
0.807
0.809
0.810
0.812
0.813
0.820
0.822
0.831
0.837
0.842
0.847
0.853
0.857
0.862
0.865
0.870
(ang)
-83.9
-107.9
-116.7
-123.9
-134.4
-142.3
-148.3
-152.7
-156.9
-160.0
-161.2
-163.1
-165.6
-168.0
-170.1
-172.1
-174.0
-176.0
-177.9
-179.6
178.9
177.2
175.6
S21
(mag)
18.598
14.425
12.863
11.496
9.351
7.854
6.682
5.797
5.096
4.487
4.286
3.996
3.595
3.231
2.944
2.686
2.451
2.255
2.076
1.915
1.769
1.645
1.526
(ang)
128.5
112.0
105.7
100.2
91.4
84.1
77.7
72.5
67.0
62.7
61.0
58.1
54.1
50.4
46.8
43.2
40.0
36.6
33.6
30.7
28.0
25.5
23.2
RD01MSU2 S-PARAMETER DATA (@Vdd=12.5V, Id=100mA)
Freq.
[MHz]
100
150
175
200
250
300
350
400
450
500
520
550
600
650
700
750
800
850
900
950
1000
1050
1100
S11
(mag)
0.957
0.902
0.884
0.867
0.843
0.831
0.824
0.821
0.823
0.824
0.826
0.825
0.829
0.833
0.839
0.843
0.849
0.854
0.858
0.862
0.869
0.870
0.876
(ang)
-79.3
-103.4
-112.7
-120.1
-131.4
-139.8
-146.1
-150.9
-155.3
-158.6
-160.0
-161.9
-164.4
-167.2
-169.4
-171.5
-173.6
-175.4
-177.2
-179.0
179.4
177.6
175.9
S21
(mag)
18.576
14.762
13.236
11.888
9.751
8.210
7.005
6.079
5.343
4.726
4.523
4.226
3.792
3.429
3.117
2.837
2.597
2.397
2.196
2.034
1.890
1.745
1.625
(ang)
131.4
114.9
108.3
102.6
93.5
86.0
79.5
74.1
68.6
64.2
62.2
59.6
55.6
51.5
47.7
44.2
41.1
37.6
34.7
31.8
29.0
26.2
23.4
(mag)
0.041
0.049
0.049
0.051
0.051
0.050
0.050
0.048
0.046
0.043
0.044
0.042
0.040
0.037
0.035
0.033
0.030
0.028
0.026
0.022
0.020
0.018
0.017
S12
(ang)
40.9
24.5
17.9
13.0
6.1
-1.5
-6.4
-11.2
-14.5
-19.2
-19.3
-21.9
-23.9
-27.8
-30.5
-31.2
-34.9
-35.3
-35.7
-37.5
-37.4
-37.7
-33.9
(mag)
0.740
0.642
0.615
0.592
0.559
0.553
0.553
0.559
0.573
0.589
0.594
0.605
0.622
0.639
0.656
0.675
0.691
0.705
0.718
0.732
0.745
0.757
0.770
S22
(ang)
-59.4
-78.6
-85.4
-91.3
-100.5
-107.6
-112.9
-117.9
-122.0
-125.5
-127.1
-129.0
-132.0
-134.9
-137.8
-140.1
-143.0
-145.2
-147.6
-149.6
-151.9
-154.1
-156.0
RD01MUS2
MITSUBISHI ELECTRIC
5/6
17 Jan. 2006
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