SMG2371P
Elektronische Bauelemente
-1A, -100V, R
DS(ON)
1.2
P-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
SC-59
A
3
3
Low R
DS(on)
trench technology.
Low thermal impedance.
Fast switching speed.
1
L
Top View
2
C B
1
2
K
E
D
APPLICATIONS
PoE Power Sourcing Equipment
PoE Powered Devices
Telecom DC/DC converters.
White LED boost converters.
F
G
H
J
REF.
A
B
C
D
E
F
PACKAGE INFORMATION
Package
SC-59
MPQ
3K
LeaderSize
7’ inch
Millimeter
Min.
Max.
2.70
3.10
2.25
3.00
1.30
1.70
1.00
1.40
1.70
2.30
0.35
0.50
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.10 REF.
0.40 REF.
0.10
0.20
0.45
0.55
0.85
1.15
1
3
2
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
1
Pulsed Drain Current
2
Continuous Source Current (Diode Conduction)
1
Power Dissipation
1
Symbol
V
DS
V
GS
T
A
=25°C
T
A
=70°C
I
D
I
DM
I
S
T
A
=25°C
T
A
=70°C
P
D
T
J
, T
STG
Ratings
-100
±20
-1
-0.8
-10
-1.6
1.3
0.8
-55 ~ 150
Unit
V
V
A
A
A
W
°C
Operating Junction and Storage Temperature Range
Thermal Resistance Data
Maximum Junction to Ambient
1
t≦10 sec
Steady-State
R
θJA
100
166
°C/W
Notes:
1.
Surface Mounted on 1” x 1” FR4 Board.
2.
Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
15-Mar-2011 Rev. A
Page 1 of 4
SMG2371P
Elektronische Bauelemente
-1A, -100V, R
DS(ON)
1.2
P-Channel Enhancement MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
Parameter
Gate-Source Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
1
Drain-Source On-Resistance
Forward Transconductance
1
Diode Forward Voltage
1
Symbol
V
GS(th)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
g
FS
V
SD
Min.
Typ.
-
-
-
-
-
-
-
5
-0.81
Max.
-3.5
±100
-1
-25
-
1.2
1.3
-
-
Unit
V
nA
μA
A
Ω
S
V
Test Conditions
V
DS
=V
GS
, I
D
= -250μA
V
DS
=0, V
GS
= ±20V
V
DS
= -80V, V
GS
=0
V
DS
= -80V, V
GS
=0, T
J
=55°C
V
DS
= -10V, V
GS
= -10V
V
GS
= -10V, I
D
= -1A
V
GS
= -4.5V, I
D
= -0.9A
V
DS
= -15V,
,
I
D
= -1A
I
S
= -0.8A, V
GS
=0
Static
-1
-
-
-
-10
-
-
-
-
Dynamic
2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q
g
Q
gs
Q
gd
Td
(ON)
T
r
Td
(OFF)
T
f
C
iss
C
oss
C
rss
-
-
-
-
-
-
-
-
-
-
3.7
1.1
1.7
3.5
3.8
15.5
10.3
358
54
29
-
-
-
-
-
-
-
-
-
-
nS
nC
I
D
= -1A
V
DS
= -50V
V
GS
= -4.5V
V
DD
= -50V
V
GEN
= -10V
R
L
=50Ω
I
D
= -1A
R
GEN
=6Ω
f=1MHz
V
DS
= -15V
V
GS
=0
pF
Notes:
1.
Pulse test：PW≦300 us duty cycle≦2%.
2.
Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
15-Mar-2011 Rev. A
Page 2 of 4
SMG2371P
Elektronische Bauelemente
-1A, -100V, R
DS(ON)
1.2
P-Channel Enhancement MOSFET
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
15-Mar-2011 Rev. A
Page 3 of 4
SMG2371P
Elektronische Bauelemente
-1A, -100V, R
DS(ON)
1.2
P-Channel Enhancement MOSFET
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
15-Mar-2011 Rev. A
Page 4 of 4
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