SMG2326N
Elektronische Bauelemente
2.2 A, 20 V, R
DS(ON)
70 m
N-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize High
Cell Density process. Low R
DS(on)
assures minimal power
loss and conserves energy, making this device ideal for use
in power management circuitry.
A
3
SC-59
L
3
Top View
C B
1
2
2
FEATURES
1
Low R
DS(on)
provides higher efficiency and extends
battery life.
Miniature SC-59 surface mount Package saves
board space.
K
E
D
F
G
H
J
Application
DC-DC converters, power management in portable
and battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless telephones.
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.25
3.00
1.30
1.70
1.00
1.40
1.70
2.30
0.35
0.50
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.10 REF.
0.40 REF.
0.10
0.20
0.45
0.55
0.85
1.15
PACKAGE INFORMATION
Package
SC-59
MPQ
3K
LeaderSize
7’ inch
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
1
Pulsed Drain Current
2
Continuous Source Current (Diode Conduction)
1
Power Dissipation
1
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
STG
Rating
20
±8
2.2
1.8
8
0.6
1.25
0.8
-55 ~ 150
Unit
V
V
A
A
A
W
°C
Operating Junction and Storage Temperature Range
Thermal Resistance Ratings
Maximum Junction to Ambient
1
t≦5 sec
Steady-State
R
θJA
100
166
°C/W
Notes:
1.
Surface Mounted on 1” x 1” FR4 Board.
2.
Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
14-Feb-2011 Rev. A
Page 1 of 2
SMG2326N
Elektronische Bauelemente
2.2 A, 20 V, R
DS(ON)
70 m
N-Channel Enhancement MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
Parameter
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
A
Drain-Source On-Resistance
A
Symbol
V
GS(th)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
Min
Static
0.7
-
-
-
5
-
-
-
Typ
-
-
-
-
-
-
-
-
11
0.6
Max
-
1
0.1
1
-
70
80
120
-
-
Unit
V
μA
μA
A
mΩ
Test conditions
V
DS
=V
GS
, I
D
=250μA
V
DS
=0, V
GS
=12V
V
DS
=16V, V
GS
=0
V
DS
=16V, V
GS
=0, T
J
=55°C
V
DS
=5V, V
GS
=4.5V
V
GS
=4.5V, I
D
=2.2A
V
GS
=2.5V, I
D
=2A
V
GS
=1.8V, I
D
=1.8A
Forward Transconductance
A
Diode Forward Voltage
g
FS
V
SD
-
-
S
V
V
DS
=5V,
,
I
D
=2A
I
S
=0.6A, V
GS
=0
Dynamic
2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q
g
Q
gs
Q
gd
Td
(ON)
T
r
Td
(OFF)
T
f
-
-
-
-
-
-
-
4.5
0.89
0.95
6
6.5
14
2
-
-
-
-
-
-
-
nS
I
D
=1A, V
DD
=10V
V
GS
=4.5V
R
G
=6Ω
nC
I
D
=2A
V
DS
=10V
V
GS
=4.5V
Notes:
1.
Pulse test：PW
≦
300 us duty cycle
≦
2%.
2.
Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
14-Feb-2011 Rev. A
Page 2 of 2
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