Preliminary
Datasheet
RJL5020DPK
Silicon N Channel MOS FET
High Speed Power Switching
Features
Built-in fast recovery diode
Low on-resistance
R
DS(on)
= 0.105
typ. (at I
D
= 19 A, V
GS
= 10 V, Ta = 25C)
Low leakage current
High speed switching
R07DS0239EJ0500
(Previous: REJ03G1733-0400)
Rev.5.00
Jan 07, 2011
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name:TO-3P)
D
G
1. Gate
2. Drain (Flange)
3. Source
1
2
3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at Tc = 25C
3. STch = 25C, Tch
150C
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)Note1
I
DR
I
DR (pulse)Note1
I
APNote3
E
AR
Pch
Note2
ch-c
Tch
Tstg
Note3
Ratings
500
±30
38
114
38
114
12.5
8.6
200
0.625
150
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
R07DS0239EJ0500 Rev.5.00
Jan 07, 2011
Page 1 of 6
RJL5020DPK
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Notes: 4. Pulse test
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(off)
R
DS(on)
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
DF
t
rr
Min
500
—
—
1.5
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
0.105
4750
520
61
45
90
215
154
140
19
57
0.94
170
Max
—
10
±0.1
4.0
0.135
—
—
—
—
—
—
—
—
—
—
1.60
—
Unit
V
A
A
V
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
Test conditions
I
D
= 10 mA, V
GS
= 0
V
DS
= 500 V, V
GS
= 0
V
GS
=
30
V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 19 A, V
GS
= 10 V
Note4
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
I
D
= 19 A
V
GS
= 10 V
R
L
= 13.2
Rg = 10
V
DD
= 400 V
V
GS
= 10 V
I
D
= 38 A
I
F
= 38 A, V
GS
= 0
Note4
I
F
= 38 A, V
GS
= 0
di
F
/dt = 100 A/s
R07DS0239EJ0500 Rev.5.00
Jan 07, 2011
Page 2 of 6
RJL5020DPK
Preliminary
Main Characteristics
Maximum Safe Operation Area
1000
10
Typical Output Characteristics
100
Ta = 25°C
Pulse Test
5.4 V
6V
10 V
5.2 V
5V
4.8 V
4.6 V
Drain Current I
D
(A)
=
10
0
10
μ
s
Drain Current I
D
(A)
100
PW
μ
s
80
60
1
Operation in this
area is limited by
R
DS(on)
Tc = 25°C
1 shot
40
4.4 V
20
0.1
4.2 V
V
GS
= 4 V
0
4
8
12
16
20
0.01
0.1
1
10
100
1000
0
Drain to Source Voltage V
DS
(V)
Drain to Source Voltage V
DS
(V)
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
Drain to Source on State Resistance
R
DS(on)
(Ω)
1
V
GS
= 10 V
Ta = 25°C
Pulse Test
Typical Transfer Characteristics
100
V
DS
= 10 V
Pulse Test
Drain Current I
D
(A)
10
0.1
1
Tc = 75°C
25°C
−25°C
0.1
0.01
1
10
100
0
2
4
6
8
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
V
GS
= 10 V
Pulse Test
0.4
Drain Current I
D
(A)
Static Drain to Source on State Resistance
R
DS(on)
(Ω)
Body-Drain Diode Reverse
Recovery Time (Typical)
1000
0.3
I
D
= 38 A
0.2
19 A
Reverse Recovery Time trr (ns)
0.5
100
10 A
0.1
di / dt = 100 A /
μs
V
GS
= 0, Ta = 25°C
10
1
10
100
0
-25
0
25
50
75
100 125 150
Case Temperature Tc (°C)
Reverse Drain Current I
DR
(A)
R07DS0239EJ0500 Rev.5.00
Jan 07, 2011
Page 3 of 6
RJL5020DPK
Typical Capacitance vs.
Drain to Source Voltage
Drain to Source Voltage V
DS
(V)
100000
V
GS
= 0
f = 1 MHz
Ta = 25°C
Ciss
Preliminary
Dynamic Input Characteristics (Typical)
I
D
= 38 A
Ta = 25
°C
V
DD
= 400 V
250 V
100 V
V
GS
10000
600
V
DS
12
1000
Coss
100
Crss
10
0
400
8
200
V
DD
= 400 V
250 V
100 V
0
40
80
120
160
4
0
50
100
150
200
250
0
200
Drain to Source Voltage V
DS
(V)
Gate Charge Qg (nC)
100
Gate to Source Cutoff Voltage V
GS(off)
(V)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
Reverse Drain Current I
DR
(A)
V
GS
= 0
Ta = 25
°C
Pulse Test
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
5
V
DS
= 10 V
I
D
= 10 mA
1 mA
0.1 mA
80
4
60
3
40
20
2
1
0
0
0.4
0.8
1.2
1.6
2.0
0
-25
0
25
50
75
100 125 150
Source to Drain Voltage V
SD
(V)
Case Temperature
Tc (°C)
R07DS0239EJ0500 Rev.5.00
Jan 07, 2011
Page 4 of 6
Gate to Source Voltage V
GS
(V)
800
16
Capacitance C (pF)
RJL5020DPK
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
Preliminary
0.1
0.1
θ
ch – c(t) =
γ
s (t) •
θ
ch – c
θ
ch – c = 0.625°C/W, Tc = 25°C
P
DM
u
tp
lse
0.05
0.03
0.02
1
0.0
1s
D=
PW
T
PW
T
ho
0.01
10
μ
100
μ
1m
10 m
100 m
1
10
Pulse Width
PW (s)
Switching Time Test Circuit
Vin Monitor
D.U.T.
R
L
10
Ω
Vin
10 V
V
DD
= 250 V
Vin
Vout
10%
10%
Vout
Monitor
Waveform
90%
10%
90%
td(on)
tr
90%
td(off)
tf
R07DS0239EJ0500 Rev.5.00
Jan 07, 2011
Page 5 of 6
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