SMS2333
Elektronische Bauelemente
-6A , -12V , R
DS(ON)
28 mΩ
Ω
P-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SMS2333 provide the designer with the best
combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness. The SOT-23 package
is universally preferred for all commercial-industrial surface
mount applications and suited for low voltage applications
such as DC/DC converters.
A
L
3
SOT-23
3
Top View
1
2
C B
1
2
K
E
D
FEATURES
Lower Gate Charge
Simple Drive Requirement
Fast Switching Characteristic
F
REF.
A
B
C
D
E
F
G
Millimeter
Min.
Max.
2.70
3.10
2.10
2.65
1.20
1.40
0.89
1.17
1.78
2.04
0.30
0.50
H
Millimeter
Min.
Max.
0.09
0.18
0.35
0.65
0.08
0.20
0.6 REF.
0.95 BSC.
J
REF.
G
H
J
K
L
MARKING
S33
PACKAGE INFORMATION
Package
SOT-23
MPQ
3K
Leader Size
7 inch
1
3
2
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
1
Symbol
V
DS
V
GS
I
D
I
DM
P
D
Rating
-12
±8
-6
-20
0.35
Unit
V
V
A
A
W
Pulsed Drain Current (t=300µs)
Maximum Power Dissipation
Maximum Power Dissipation
2
1
2
1
1.1
357
R
θJA
113
T
J
, T
STG
150, -55~150
°
C
° /W
C
Thermal Resistance Junction-Ambient
Thermal Resistance Junction-Ambient
Operating Junction & Storage Temperature
Note：
1.
2.
Device mounted on FR-4 substrate board, with minimum recommended pad layout, single side.
Device mounted on no heat sink.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
27-Jun-2014 Rev.A
Page 1 of 3
SMS2333
Elektronische Bauelemente
-6A , -12V , R
DS(ON)
28 mΩ
Ω
P-Channel Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Symbol
Min.
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
1
Typ.
Max.
Unit
Teat Conditions
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
g
fs
-12
-0.4
-
-
-
-
-
-
-
-
-
18
-
-
-
-
-
2
-
-1
±0.1
-1
-
28
32
40
63
150
V
V
µA
µA
S
V
GS
=0, I
D
= -250µA
V
DS
=V
GS
, I
D
= -250µA
V
GS
= ±8V, V
DS
=0
V
DS
= -12V, V
GS
=0
V
DS
= -5V, I
D
= -5A
V
DS
= -4.5V, I
D
= -5A
V
DS
= -3.7V, I
D
= -4.6A
Gate-Source Leakage Current
Drain-Source Leakage Current
Forward Tranconductance
1
Static Drain-Source On-Resistance
1
R
DS(ON)
-
-
-
m
V
GS
= -2.5V, I
D
= -4.3A
V
GS
= -1.8V, I
D
= -1A
V
GS
= -1.5V, I
D
= -0.5A
Dynamic Parameters
Total Gate Charge
Gate-Source Charge
Gate-Drain Change
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
R
g
T
d(on)
T
r
T
d(off)
T
f
-
-
-
-
-
-
1.9
-
-
-
-
14
2.3
3.6
1275
255
236
-
26
24
45
20
-
-
-
-
-
-
19
-
-
nS
-
-
V
DD
= -6V
V
GEN
= -4.5V
I
D
= -4A
R
GEN
=1
R
L
=6
f =1.0MHz
pF
V
GS
=0
V
DS
= -6V
f =1.0MHz
nC
I
D
= -5A V
DS
= -6V
V
GS
= -4.5V
Source-Drain Diode
Forward Current
Pulsed Forward Current
Forward Voltage
1
2
2
I
S
I
SM
V
DS
T
rr
Q
rr
-
-
-
-
-
-
-
-
24
8
-1.4
-20
-1.2
48
16
A
A
V
nS
T
C
= 25°
C
V
GS
=0, I
S
= -4A
I
F
= -4A, dl/dt=100A/µs
Reverse Recovery Time
Reverse Recovery Charge
nC
Note:
1. Pulse Test : Pulse width≦300µs, duty cycle≦2%.
2. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
27-Jun-2014 Rev.A
Page 2 of 3
SMS2333
Elektronische Bauelemente
-6A , -12V , R
DS(ON)
28 mΩ
Ω
P-Channel Enhancement Mode Power MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
27-Jun-2014 Rev.A
Page 3 of 3
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